C. J. Tun

906 total citations
46 papers, 781 citations indexed

About

C. J. Tun is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, C. J. Tun has authored 46 papers receiving a total of 781 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Condensed Matter Physics, 28 papers in Electronic, Optical and Magnetic Materials and 28 papers in Materials Chemistry. Recurrent topics in C. J. Tun's work include GaN-based semiconductor devices and materials (41 papers), Ga2O3 and related materials (28 papers) and ZnO doping and properties (28 papers). C. J. Tun is often cited by papers focused on GaN-based semiconductor devices and materials (41 papers), Ga2O3 and related materials (28 papers) and ZnO doping and properties (28 papers). C. J. Tun collaborates with scholars based in Taiwan, United States and China. C. J. Tun's co-authors include Jinn‐Kong Sheu, C. H. Kuo, Gou-Chung Chi, Wei‐Chih Lai, C. J. Kao, B. J. Pong, G.C. Chi, R. C. Tu, Chia-Wei Kuo and Yan‐Kuin Su and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C. J. Tun

46 papers receiving 761 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. J. Tun Taiwan	17	546	499	414	333	153	46	781
D. C. Oh Japan	16	258 0.5×	583 1.2×	338 0.8×	384 1.2×	107 0.7×	59	753
M. Poschenrieder Germany	10	540 1.0×	460 0.9×	333 0.8×	431 1.3×	123 0.8×	13	850
Soojeong Choi United States	14	376 0.7×	298 0.6×	293 0.7×	230 0.7×	121 0.8×	29	569
S.J. Chang Taiwan	16	612 1.1×	342 0.7×	298 0.7×	417 1.3×	220 1.4×	48	812
Е. А. Кожухова Russia	17	369 0.7×	485 1.0×	365 0.9×	472 1.4×	177 1.2×	48	820
Kwan Soo Chung South Korea	9	386 0.7×	424 0.8×	265 0.6×	253 0.8×	98 0.6×	23	683
Gou-Chung Chi Taiwan	14	394 0.7×	420 0.8×	231 0.6×	301 0.9×	161 1.1×	45	678
Yingfeng He China	12	396 0.7×	325 0.7×	233 0.6×	300 0.9×	160 1.0×	35	645
Kentaro Nagamatsu Japan	15	522 1.0×	262 0.5×	283 0.7×	322 1.0×	101 0.7×	44	676
Yoon Shon South Korea	18	276 0.5×	780 1.6×	396 1.0×	375 1.1×	140 0.9×	93	920

Countries citing papers authored by C. J. Tun

Since Specialization

Citations

This map shows the geographic impact of C. J. Tun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. J. Tun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. J. Tun more than expected).

Fields of papers citing papers by C. J. Tun

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. J. Tun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. J. Tun. The network helps show where C. J. Tun may publish in the future.

Co-authorship network of co-authors of C. J. Tun

This figure shows the co-authorship network connecting the top 25 collaborators of C. J. Tun. A scholar is included among the top collaborators of C. J. Tun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. J. Tun. C. J. Tun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Tun, C. J., et al.. (2010). Physical properties of MgZnO film grown by RF magnetron sputtering using ZnO/MgO (80/20 wt%) target. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7603. 76031V–76031V. 1 indexed citations

Chen, Yi‐Ju, et al.. (2010). Fabrication of High-Power InGaN-Based Light-Emitting Diode Chips on Pyramidally Patterned Sapphire Substrate. Japanese Journal of Applied Physics. 49(2R). 20201–20201. 7 indexed citations

Fu, Y., et al.. (2009). Nitride-based blue light-emitting diodes with multiple MgxNy/GaN buffer layers. Solid-State Electronics. 54(5). 590–594. 3 indexed citations

Tun, C. J., et al.. (2009). Evolution of surface morphology of dry-etched ZnO with Cl2/Ar plasma. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(5). 2187–2191. 1 indexed citations

Fu, Y., et al.. (2009). Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In$_{0.08}$Ga$_{0.92}$N Shallow Step. IEEE Photonics Technology Letters. 21(6). 371–373. 2 indexed citations

Lai, Wei‐Chih, et al.. (2009). GaN-Based LEDs With AZO:Y Upper Contact. IEEE Transactions on Electron Devices. 57(1). 134–139. 19 indexed citations

Kuo, C. H., Lei Chang, Chia-Wei Kuo, & C. J. Tun. (2009). Improvement of the Efficiency of Nitride-Based Light Emitting Diodes on Nanoinverted Pyramid GaN Templates. Journal of The Electrochemical Society. 156(12). H986–H986. 3 indexed citations

Kuo, Chia-Wei, et al.. (2008). Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition. Journal of Crystal Growth. 311(2). 249–253. 9 indexed citations

Gerhardt, Nils C., S. C. Hung, C.-H. Nien, et al.. (2008). Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy. Applied Physics Letters. 92(16). 1 indexed citations

10.

Tun, C. J., et al.. (2008). Reactive ion etching of ZnO using the H 2 /CH 4 and H 2 /CH 4 /Ar mixtures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7135. 71350D–71350D. 1 indexed citations

11.

Tun, C. J., et al.. (2006). Applications of transparent Al-doped ZnO contact on GaN-based power LED. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6121. 61210X–61210X. 4 indexed citations

12.

Sheu, Jinn‐Kong, et al.. (2006). Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN. Applied Physics Letters. 88(4). 31 indexed citations

13.

Sheu, Jinn‐Kong, et al.. (2006). Planar Ultraviolet Photodetectors Formed by Si Implantation into p-GaN. Journal of The Electrochemical Society. 153(9). G799–G799. 3 indexed citations

14.

Sheu, Jinn‐Kong, et al.. (2006). Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring. Applied Physics Letters. 89(18). 12 indexed citations

15.

Kao, C. J., C. J. Tun, Jinn‐Kong Sheu, et al.. (2005). Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors. Journal of Applied Physics. 98(6). 18 indexed citations

16.

Tu, R. C., C. J. Tun, Haiping Liu, et al.. (2003). Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers. IEEE Photonics Technology Letters. 15(8). 1050–1052. 6 indexed citations

17.

Sheu, Jinn‐Kong, Wei‐Chi Lai, Yan‐Kuin Su, et al.. (2003). Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer. Journal of Applied Physics. 94(3). 1753–1757. 36 indexed citations

18.

Sheu, Jinn‐Kong, et al.. (2002). Characterization of Si implants in p-type GaN. IEEE Journal of Selected Topics in Quantum Electronics. 8(4). 767–772. 33 indexed citations

19.

Lee, Minjoo Larry, Jinn‐Kong Sheu, C. J. Kao, et al.. (2002). GaN p–n junction diode formed by Si ion implantation into p-GaN. Solid-State Electronics. 46(12). 2179–2183. 16 indexed citations

20.

Sheu, Jinn‐Kong, et al.. (2002). Planar GaN n+–p photodetectors formed by Si implantation into p-GaN. Applied Physics Letters. 81(22). 4263–4265. 35 indexed citations

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