R. C. Tu

481 total citations
30 papers, 424 citations indexed

About

R. C. Tu is a scholar working on Materials Chemistry, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, R. C. Tu has authored 30 papers receiving a total of 424 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Materials Chemistry, 20 papers in Atomic and Molecular Physics, and Optics and 15 papers in Electrical and Electronic Engineering. Recurrent topics in R. C. Tu's work include Semiconductor Quantum Structures and Devices (20 papers), GaN-based semiconductor devices and materials (14 papers) and Quantum Dots Synthesis And Properties (11 papers). R. C. Tu is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), GaN-based semiconductor devices and materials (14 papers) and Quantum Dots Synthesis And Properties (11 papers). R. C. Tu collaborates with scholars based in Taiwan, United States and Japan. R. C. Tu's co-authors include Makoto Shiojiri, Jer‐Ren Yang, J. T. Hsu, Koji Inoke, Kazuto Watanabe, N. Nakanishi, Takashi Yamazaki, Gou-Chung Chi, C. J. Tun and Chang‐Cheng Chuo and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. C. Tu

28 papers receiving 414 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. C. Tu Taiwan 11 312 222 179 168 142 30 424
H.-H. Wehmann Germany 15 333 1.1× 302 1.4× 162 0.9× 226 1.3× 241 1.7× 33 568
H. Jönen Germany 14 462 1.5× 215 1.0× 253 1.4× 144 0.9× 202 1.4× 24 522
M. A. Mastro United States 11 290 0.9× 165 0.7× 63 0.4× 191 1.1× 164 1.2× 26 385
Rafal Ciechonski Sweden 10 329 1.1× 229 1.0× 149 0.8× 228 1.4× 186 1.3× 24 518
S. Tottori Japan 7 443 1.4× 206 0.9× 170 0.9× 168 1.0× 213 1.5× 10 489
S. Rennesson France 11 302 1.0× 161 0.7× 146 0.8× 270 1.6× 141 1.0× 28 457
Michael N. Fairchild United States 10 427 1.4× 285 1.3× 121 0.7× 163 1.0× 220 1.5× 14 531
P. M. Bridger United States 11 453 1.5× 165 0.7× 281 1.6× 378 2.3× 174 1.2× 17 645
Tilman Schimpke Germany 14 453 1.5× 263 1.2× 107 0.6× 197 1.2× 220 1.5× 21 534
O. H. Nam South Korea 10 337 1.1× 170 0.8× 142 0.8× 203 1.2× 111 0.8× 15 425

Countries citing papers authored by R. C. Tu

Since Specialization
Citations

This map shows the geographic impact of R. C. Tu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. C. Tu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. C. Tu more than expected).

Fields of papers citing papers by R. C. Tu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. C. Tu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. C. Tu. The network helps show where R. C. Tu may publish in the future.

Co-authorship network of co-authors of R. C. Tu

This figure shows the co-authorship network connecting the top 25 collaborators of R. C. Tu. A scholar is included among the top collaborators of R. C. Tu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. C. Tu. R. C. Tu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yamada, Mitsuhiko, et al.. (2004). High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes. Japanese Journal of Applied Physics. 43(3R). 968–968. 6 indexed citations
2.
Saijo, H., J. T. Hsu, R. C. Tu, et al.. (2004). Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes. Applied Physics Letters. 84(13). 2271–2273. 10 indexed citations
3.
Tu, R. C., et al.. (2003). Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts. IEEE Photonics Technology Letters. 15(5). 646–648. 39 indexed citations
4.
Tu, R. C., C. J. Tun, Haiping Liu, et al.. (2003). Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers. IEEE Photonics Technology Letters. 15(8). 1050–1052. 6 indexed citations
5.
Watanabe, Kazuto, N. Nakanishi, Takashi Yamazaki, et al.. (2003). Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN. Applied Physics Letters. 82(5). 715–717. 48 indexed citations
6.
Watanabe, Kazuto, Jer‐Ren Yang, Koji Inoke, et al.. (2003). Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN. Applied Physics Letters. 82(5). 718–720. 66 indexed citations
7.
Tu, R. C., et al.. (2003). Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts. IEEE Photonics Technology Letters. 15(5). 649–651. 71 indexed citations
8.
Lo, Ikai, Li-Wei Tu, Jenn-Kai Tsai, et al.. (2001). Thermal effect on quantum confinement in ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells. Solid State Communications. 120(4). 155–160. 3 indexed citations
9.
Sakharov, A. V., A. S. Usikov, W. V. Lundin, et al.. (2001). Comparative Study of InGaN/GaN Structures Grown by MOCVD Using Various Growth Sequences. physica status solidi (b). 228(1). 95–98. 3 indexed citations
10.
Tu, R. C., Ying Su, Y. S. Huang, & F. R. Chien. (1999). Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe/ZnTe strained-layer superlattices buffer layer. Journal of Crystal Growth. 201-202. 506–509. 4 indexed citations
11.
Tu, R. C., et al.. (1999). Effects of thermal annealing on photoluminescence and structural properties of (ZnSe)2(CdSe)n short-period-superlattices multiple quantum wells. Journal of Applied Physics. 85(4). 2398–2401. 6 indexed citations
12.
Tu, R. C., Y.K. Su, W.H. Lan, & F. R. Chien. (1999). Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by molecular beam epitaxy. Journal of Crystal Growth. 201-202. 961–964. 1 indexed citations
13.
Tu, R. C., et al.. (1998). The annealing effects on ZnCdSe/ZnSe quantum wells and ZnSe/GaAs interfaces. Journal of Applied Physics. 84(11). 6017–6022. 8 indexed citations
14.
Huang, Y.S., et al.. (1998). Optical characterization of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs. 36(3). 533–541. 1 indexed citations
15.
Tu, R. C., Y.K. Su, Der‐Yuh Lin, et al.. (1998). Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells. Journal of Applied Physics. 83(2). 1043–1048. 15 indexed citations
16.
Tu, R. C., et al.. (1998). Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy. Journal of Applied Physics. 83(3). 1664–1669. 10 indexed citations
17.
Tu, R. C., et al.. (1998). Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers. Japanese Journal of Applied Physics. 37(9R). 4732–4732. 3 indexed citations
18.
Tu, R. C., et al.. (1998). The structural and optical properties of high quality ZnTe grown on GaAs using ZnSe/ZnTe strained superlattices buffer layer. Journal of Applied Physics. 84(5). 2866–2870. 6 indexed citations
19.
Tu, R. C., et al.. (1998). Photoluminescence properties of Zn1-xMgxSe on misoriented GaAs substrates by molecular beam epitaxy. Journal of Applied Physics. 84(12). 6877–6880. 5 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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