Chia-Feng Lin

652 total citations
18 papers, 537 citations indexed

About

Chia-Feng Lin is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Chia-Feng Lin has authored 18 papers receiving a total of 537 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Condensed Matter Physics, 11 papers in Materials Chemistry and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Chia-Feng Lin's work include GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (9 papers) and ZnO doping and properties (8 papers). Chia-Feng Lin is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (9 papers) and ZnO doping and properties (8 papers). Chia-Feng Lin collaborates with scholars based in Taiwan, United States and Australia. Chia-Feng Lin's co-authors include Hao‐Chung Kuo, Jung-Tang Chu, Chang-Chin Yu, Fang-I Lai, Da-Wei Lin, Jung Han, Hui Cao, Cheng Zhang, Wen Xiong and Sung Hyun Park and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Chia-Feng Lin

17 papers receiving 518 citations

Peers

Chia-Feng Lin

CMP

EEE

EOMM

AMPO

S. B. Thapa Germany

T.K. Ko Taiwan

C.F. Shen Taiwan

C. C. Kao Taiwan

Hanling Long China

M. H. Hsieh Taiwan

E. Luna Mexico

Tomotsugu Mitani Japan

Chang-Chin Yu Taiwan

Takashi Tsunekawa Japan

S. B. Thapa Germany

Chia-Feng Lin

368 ×0.9

CMP

273 ×1.0

203 ×1.0

EEE

201 ×1.0

EOMM

91 ×0.6

AMPO

Citations per year, relative to Chia-Feng Lin Chia-Feng Lin (= 1×) peers S. B. Thapa

Countries citing papers authored by Chia-Feng Lin

Since Specialization

Citations

This map shows the geographic impact of Chia-Feng Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chia-Feng Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chia-Feng Lin more than expected).

Fields of papers citing papers by Chia-Feng Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chia-Feng Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chia-Feng Lin. The network helps show where Chia-Feng Lin may publish in the future.

Co-authorship network of co-authors of Chia-Feng Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Chia-Feng Lin. A scholar is included among the top collaborators of Chia-Feng Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chia-Feng Lin. Chia-Feng Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Huang, Zengqi, Yao Cai, Ting‐An Lin, et al.. (2025). Interface-tailored ZnO/BDPQ-Oct inorganic/organic dual sensors for improved light/gas detection and artificial intelligence-enabled gas recognition. Journal of Materials Chemistry C. 13(30). 15310–15321.

Lin, Der-Yuh, et al.. (2018). Doping with Nb enhances the photoresponsivity of WSe2 thin sheets. AIP Advances. 8(5). 17 indexed citations

Ko, Tsung‐Shine, et al.. (2018). Photoresponse properties of large area MoS₂metal–semiconductor–metal photodetectors. Japanese Journal of Applied Physics. 57(4S). 04FP12–04FP12. 3 indexed citations

Lin, Chia-Feng, et al.. (2017). A fault-tolerant ONVIF protocol extension for seamless surveillance video stream recording. Computer Standards & Interfaces. 55. 55–72. 2 indexed citations

Ko, Tsung‐Shine, et al.. (2016). High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer. Journal of Crystal Growth. 464. 175–179. 21 indexed citations

Zhang, Cheng, Sung Hyun Park, Danti Chen, et al.. (2015). Mesoporous GaN for Photonic Engineering—Highly Reflective GaN Mirrors as an Example. ACS Photonics. 2(7). 980–986. 138 indexed citations

Lakhtakia, Akhlesh, et al.. (2011). Biologically inspired achromatic waveplates for visible light. Nature Communications. 2(1). 363–363. 37 indexed citations

Xuan, Rong, et al.. (2011). The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy. Applied Physics Letters. 98(12). 28 indexed citations

Lin, Chia-Feng, et al.. (2011). Chemical–Mechanical Lift-Off Process for InGaN Epitaxial Layers. Applied Physics Express. 4(6). 62101–62101. 16 indexed citations

10.

Lin, Chia-Feng, et al.. (2009). InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process. Electrochemical and Solid-State Letters. 12(7). H233–H233. 11 indexed citations

11.

Lin, Chia-Feng, et al.. (2009). Fabrication of the InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process. IEEE Photonics Technology Letters. 21(16). 1142–1144. 3 indexed citations

12.

Lin, Chia-Feng, et al.. (2008). Wet Mesa Etching Process in InGaN-based Light Emitting Diodes. Electrochemical and Solid-State Letters. 11(7). H169–H169. 4 indexed citations

13.

Lin, Chia-Feng, et al.. (2007). Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids. Journal of Physics and Chemistry of Solids. 69(2-3). 589–592. 1 indexed citations

14.

Lin, Chia-Feng, et al.. (2006). High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure. Applied Physics Letters. 88(8). 60 indexed citations

15.

Chang, Yi‐An, et al.. (2005). Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer. Japanese Journal of Applied Physics. 44(11R). 7916–7916. 5 indexed citations

16.

Lai, Fang-I, et al.. (2004). Study of GaN light-emitting diodes fabricated by laser lift-off technique. Journal of Applied Physics. 95(8). 3916–3922. 164 indexed citations

17.

Chang, Edward Yi, et al.. (2003). Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations. Japanese Journal of Applied Physics. 42(Part 1, No. 7A). 4207–4212. 20 indexed citations

18.

Chuo, Chang‐Cheng, et al.. (2000). Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer. Solid-State Electronics. 44(8). 1483–1486. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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