Engin Arslan

1.2k citations

48 papers · 1.1k indexed · h-index 16

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 34
- GaN-based semiconductor devices and materials 34
Electronic, Optical and Magnetic Materials 15
- Ga2O3 and related materials 15

Co-authors: Ekmel Özbay Süleyman Özçelik Ş. Altındal Serkan Bütün Mustafa Kemal Öztürk Yasemin Şafak Ali Teke M. Kasap
Journals: Journal of Applied Physics (4 papers)Journal of Materials Science Materials in Electronics (4 papers)Thin Solid Films (3 papers)Journal of Electronic Materials (3 papers)Microelectronics Reliability (3 papers)
Partner nations: Türkiye Sweden United States

In The Last Decade

Engin Arslan

47 papers receiving 1.0k citations

Peers

Countries citing papers authored by Engin Arslan

Since Specialization

Citations

This map shows the geographic impact of Engin Arslan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Engin Arslan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Engin Arslan more than expected).

Fields of papers citing papers by Engin Arslan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Engin Arslan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Engin Arslan. The network helps show where Engin Arslan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Engin Arslan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Engin Arslan Line = papers co-authored together Engin Arslan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The use of myoelectric prosthesis in a sample of veterans with unilateral upper extremity amputation: prosthesis satisfaction and quality of life Irish Journal of Medical Science (1971 -) ·Shuda Di, Dae-Soon Kwak, Zhenhua Cui, Dima B. Barsky, Engin Arslan, Yasin Demir, Struis Rudolf P.W.J.	2022	0
2	A novel hot carrier-induced blue light-emitting device Journal of Alloys and Compounds ·Alexander Wagermaier, Ayşe Erol, Engin Arslan, Ekmel Özbay, S.B. Lişesivdin, E. Tiraş	2021	2
3	Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate Journal of Alloys and Compounds ·Theodore M. Edson, Engin Arslan, Jongwon Ryu, E. Tiraş, Ekmel Özbay	2021	10
4	Current transport properties of (Au/Ni)/HfAlO3/n-Si metal–insulator–semiconductor junction Journal of Physics and Chemistry of Solids ·Engin Arslan, Yosef Badalı, Delphine G. Denais-Laliève, Ş. Altındal, Ekmel Özbay	2020	24
5	The Effect of 8-Week Balance Training on the Agility, Strength, Balance Performance and Tennis Skills of 10-14 Year-Old Tennis Players Journal of Educational Issues ·Ashwani Sengar, Engin Arslan	2020	1
6	Determination of current transport and trap states density in AlInGaN/GaN heterostructures Microelectronics Reliability ·Engin Arslan, S.J. REEVES, Ş. Altındal, Ekmel Özbay	2019	14
7	Scattering analysis of ultrathin barrier (< 7 nm) GaN-based heterostructures Applied Physics A ·Thomas Sieger Derr, Engin Arslan, Hyesun Yoo, Mustafa Kemal Öztürk, S.B. Lişesivdin, Ekmel Özbay	2019	5
8	Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics ·Engin Arslan, Mustafa Kemal Öztürk, Süleyman Özçelik, Ekmel Özbay	2019	3
9	Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer Journal of Electronic Materials ·Engin Arslan, Ş. Altındal, S.J. REEVES, Falk Müller-Veerse, Mustafa Kemal Öztürk, Ekmel Özbay	2018	8
10	Complementary and alternative technique for the determination of electron effective mass: quantum Hall effect Bilkent University Institutional Repository (Bilkent University) ·Jongwon Ryu, E. Tiraş, Engin Arslan, Tuyukina	2016	2
11	The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure Thin Solid Films ·Franziska Schithüsen, Engin Arslan, M Finander, Vinícius Thalys Barros Pereira, Sibel Gökden, Özgür Duygulu, Ali Arslan Kaya, Camila Zangerolame Santos, Ali Teke, Ekmel Özbay	2013	3
12	Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures Thin Solid Films ·Engin Arslan, Muhammad Yasir Shafi, Sibel Gökden, Ali Teke, Ekmel Özbay	2013	3
13	Double subband occupation of the two-dimensional electron gas in InxAl1−xN/AlN/GaN/AlN heterostructures with a low indium content (0.064≤x≤0.140) barrier Thin Solid Films ·S.B. Lişesivdin, Pantelija Nikolic, M. Kasap, Mustafa Kemal Öztürk, Engin Arslan, Süleyman Özçelik, Ekmel Özbay	2010	3
14	Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis Journal of Electronic Materials ·Engin Arslan, Serkan Bütün, Yasemin Şafak, Ekmel Özbay	2010	29
15	Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures Journal of Applied Physics ·Franziska Schithüsen, Joachim Scheller, Sibel Gökden, Ali Teke, Mustafa Kemal Öztürk, M. Kasap, Süleyman Özçelik, Engin Arslan, Ekmel Özbay	2009	81
16	Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures Applied Physics Letters ·Engin Arslan, Serkan Bütün, Ekmel Özbay	2009	134
17	Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures Journal of Applied Physics ·Engin Arslan, Ş. Altındal, Süleyman Özçelik, Ekmel Özbay	2009	96
18	Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures Semiconductor Science and Technology ·Engin Arslan, Ş. Altındal, Süleyman Özçelik, Ekmel Özbay	2009	76
19	The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate Applied Physics A ·Engin Arslan, Mustafa Kemal Öztürk, Özgür Duygulu, Ali Arslan Kaya, Süleyman Özçelik, Ekmel Özbay	2008	28
20	The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates Journal of Applied Physics ·Engin Arslan, Serkan Bütün, S.B. Lişesivdin, M. Kasap, Süleyman Özçelik, Ekmel Özbay	2008	56

About Engin Arslan

Engin Arslan is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 48 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (17 papers), Ga2O3 and related materials (15 papers), Semiconductor materials and interfaces (14 papers), ZnO doping and properties (9 papers), Graphene research and applications (6 papers), Metal and Thin Film Mechanics (6 papers) and Semiconductor Quantum Structures and Devices (6 papers). The work is most often cited by research in Condensed Matter Physics (620 citations), Electronic, Optical and Magnetic Materials (325 citations), Atomic and Molecular Physics, and Optics (531 citations), Electrical and Electronic Engineering (647 citations) and Materials Chemistry (424 citations). Engin Arslan has collaborated with scholars based in Türkiye, Sweden and United States. Frequent co-authors include Ekmel Özbay, Süleyman Özçelik, Ş. Altındal, Serkan Bütün, Mustafa Kemal Öztürk, Yasemin Şafak, Ali Teke, M. Kasap, Özgür Kelekçi̇ and S.B. Lişesivdin. Their work appears in journals such as Journal of Applied Physics, Journal of Materials Science Materials in Electronics, Thin Solid Films, Journal of Electronic Materials and Microelectronics Reliability.

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