X. Ni

1.3k total citations
59 papers, 1.1k citations indexed

About

X. Ni is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, X. Ni has authored 59 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Condensed Matter Physics, 27 papers in Electronic, Optical and Magnetic Materials and 26 papers in Materials Chemistry. Recurrent topics in X. Ni's work include GaN-based semiconductor devices and materials (58 papers), Ga2O3 and related materials (27 papers) and ZnO doping and properties (24 papers). X. Ni is often cited by papers focused on GaN-based semiconductor devices and materials (58 papers), Ga2O3 and related materials (27 papers) and ZnO doping and properties (24 papers). X. Ni collaborates with scholars based in United States, Lithuania and China. X. Ni's co-authors include H. Morkoç̌, Ü. Özgür, H. Morkoç, A. A. Baski, Y. Fu, Necmi Bıyıklı, Y. T. Moon, M. Wu, Ümit Özgür and V. Avrutin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

X. Ni

57 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
X. Ni United States 19 1.0k 519 471 403 328 59 1.1k
Michael A. Banas United States 10 1.0k 1.0× 482 0.9× 431 0.9× 487 1.2× 359 1.1× 18 1.1k
Robert M. Farrell United States 15 948 0.9× 398 0.8× 344 0.7× 510 1.3× 373 1.1× 24 1.1k
I. K. Shmagin United States 11 795 0.8× 419 0.8× 389 0.8× 360 0.9× 391 1.2× 16 1.0k
B. Monemar Sweden 20 1.2k 1.1× 791 1.5× 720 1.5× 511 1.3× 408 1.2× 57 1.5k
Chih‐Chien Pan United States 12 832 0.8× 374 0.7× 280 0.6× 487 1.2× 278 0.8× 17 883
Lindsay Hussey United States 15 702 0.7× 304 0.6× 361 0.8× 191 0.5× 266 0.8× 19 806
G. Kamler Poland 17 781 0.8× 418 0.8× 368 0.8× 264 0.7× 350 1.1× 59 902
Caroline Chèze Germany 18 832 0.8× 536 1.0× 491 1.0× 365 0.9× 478 1.5× 46 1.2k
G. Nataf France 15 810 0.8× 571 1.1× 445 0.9× 363 0.9× 402 1.2× 31 1.1k
Christopher D. Yerino United States 17 649 0.6× 520 1.0× 368 0.8× 271 0.7× 273 0.8× 22 867

Countries citing papers authored by X. Ni

Since Specialization
Citations

This map shows the geographic impact of X. Ni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. Ni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. Ni more than expected).

Fields of papers citing papers by X. Ni

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. Ni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. Ni. The network helps show where X. Ni may publish in the future.

Co-authorship network of co-authors of X. Ni

This figure shows the co-authorship network connecting the top 25 collaborators of X. Ni. A scholar is included among the top collaborators of X. Ni based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with X. Ni. X. Ni is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Alivov, Ya. I., et al.. (2010). n-Al0.15Ga0.85N/p-6H–SiC heterostructure and based bipolar transistor. Microelectronics Reliability. 50(12). 2090–2092. 3 indexed citations
2.
Li, X., X. Ni, M. Wu, et al.. (2010). InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide. physica status solidi (a). 207(8). 1993–1996. 18 indexed citations
3.
Leach, Jacob H., X. Ni, X. Li, et al.. (2010). Bias dependent two-channel conduction in InAlN/AlN/GaN structures. Journal of Applied Physics. 107(8). 15 indexed citations
4.
Ni, X., et al.. (2010). Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency. Superlattices and Microstructures. 48(2). 133–153. 28 indexed citations
5.
Wu, M., Jacob H. Leach, X. Ni, et al.. (2010). InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(5). 908–911. 9 indexed citations
6.
Özgür, Ü., et al.. (2010). Ballistic transport in InGaN-based LEDs: impact on efficiency. Semiconductor Science and Technology. 26(1). 14022–14022. 25 indexed citations
7.
Ni, X., et al.. (2009). Investigation of vertical current-voltage characteristics of Al(Ga)N/GaN RTD-like heterostructures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7216. 72160S–72160S. 2 indexed citations
8.
Leach, Jacob H., M. Wu, X. Ni, et al.. (2009). Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures. physica status solidi (a). 207(1). 211–216. 18 indexed citations
9.
Ni, X., X. Li, Jun Xie, et al.. (2009). Reduction of efficiency droop in InGaN-based blue LEDs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7216. 72161W–72161W. 5 indexed citations
10.
Ni, X., et al.. (2009). On carrier spillover in c- and m-plane InGaN light emitting diodes. Applied Physics Letters. 95(20). 37 indexed citations
11.
Zhou, Lin, X. Ni, Ü. Özgür, et al.. (2009). Atomic structure of the m-plane AlN/SiC interface. Journal of Crystal Growth. 311(6). 1456–1459. 5 indexed citations
12.
Nie, Jia-Cai, Serguei Chevtchenko, Jinqiao Xie, X. Ni, & H. Morkoç̌. (2008). Comparative study of deep levels in GaN grown on different templates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6894. 689424–689424. 4 indexed citations
13.
Ni, X., Ü. Özgür, Serguei Chevtchenko, et al.. (2008). Epitaxial lateral overgrowth of (11¯00) m -plane GaN on m -plane 6H-SiC by metalorganic chemical vapor deposition. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6894. 689420–689420. 1 indexed citations
14.
Ni, X., Ü. Özgür, H. Morkoç̌, Z. Liliental‐Weber, & Henry O. Everitt. (2007). Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition. Journal of Applied Physics. 102(5). 25 indexed citations
15.
Bıyıklı, Necmi, X. Ni, Y. Fu, et al.. (2007). Magnetotransport properties of AlxGa1−xN∕AlN∕GaN heterostructures grown on epitaxial lateral overgrown GaN templates. Journal of Applied Physics. 101(11). 7 indexed citations
16.
Moore, James C., et al.. (2007). AFM and CAFM studies of ELO GaN films. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6473. 647308–647308. 3 indexed citations
17.
Xie, Jinqiao, Ü. Özgür, Y. Fu, et al.. (2007). Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork. Applied Physics Letters. 90(4). 49 indexed citations
18.
Bıyıklı, Necmi, Ü. Özgür, X. Ni, et al.. (2006). Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1−xN∕AlN∕GaN heterostructures. Journal of Applied Physics. 100(10). 10 indexed citations
19.
Fu, Y., Feng Yun, Y. T. Moon, et al.. (2006). Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy. Journal of Applied Physics. 99(3). 16 indexed citations
20.
Ni, X., Ümit Özgür, Yang Ming Fu, et al.. (2006). Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth. Applied Physics Letters. 89(26). 47 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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