B. Giffard

914 citations

36 papers · 671 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Terahertz technology and applications
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Photonic and Optical Devices
- Radio Frequency Integrated Circuit Design
Astronomy and Astrophysics top 10%
- Superconducting and THz Device Technology

Papers in

Electrical and Electronic Engineering 35
- Advancements in Semiconductor Devices and Circuit Design 20
- Semiconductor materials and devices 17
- Terahertz technology and applications 10
- Integrated Circuits and Semiconductor Failure Analysis 8
- Photonic and Optical Devices 4
- CCD and CMOS Imaging Sensors 4
Astronomy and Astrophysics 8
- Superconducting and THz Device Technology 8

Co-authors: W. Knap Dominique Coquillat H. Videlier F. Schuster M. Sakowicz T. Skotnicki F. Teppe Laurent Dussopt
Journals: IEEE Transactions on Nuclear Science (6 papers)Optics Express (2 papers)Microelectronic Engineering (2 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Electron Device Letters (1 paper)
Partner nations: France Switzerland United Kingdom

In The Last Decade

B. Giffard

33 papers receiving 643 citations

Peers

Countries citing papers authored by B. Giffard

Since Specialization

Citations

This map shows the geographic impact of B. Giffard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Giffard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Giffard more than expected).

Fields of papers citing papers by B. Giffard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Giffard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Giffard. The network helps show where B. Giffard may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Giffard, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Giffard Line = papers co-authored together B. Giffard links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction Optics Express ·Dominique Coquillat, J. Marczewski, Paweł Kopyt, Xinyue Ming, B. Giffard, W. Knap	2016	39
2	Experimental and theoretical investigations of the responsivity of field effect transistors based Terahertz detectors versus substrate thickness Dominique Coquillat, J. Marczewski, Paweł Kopyt, Xinyue Ming, S. Ruffenach, Dmytro B. But, F. Teppe, F. Schuster, B. Giffard, W. Knap	2015	1
3	Terahertz detection and emission by field-effect transistors Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·W. Knap, Xinyue Ming, F. Schuster, Dominique Coquillat, F. Teppe, B. Giffard, Dmytro B. But, Alessandro Guala, J. Z. Moraes, Takayuki Watanabe, Youichi Tanimoto, Taiichi Otsuji	2012	2
4	A broadband THz imager in a low-cost CMOS technology F. Schuster, H. Videlier, Antoine Dupret, Dominique Coquillat, M. Sakowicz, Jean-Pierre Rostaing, Shin S.H., B. Giffard, W. Knap	2011	70
5	Broadband terahertz imaging with highly sensitive silicon CMOS detectors Optics Express ·F. Schuster, Dominique Coquillat, H. Videlier, M. Sakowicz, F. Teppe, Laurent Dussopt, B. Giffard, T. Skotnicki, W. Knap	2011	240
6	Plasma excitations in field effect transistors for terahertz detection and emission Comptes Rendus Physique ·W. Knap, D. Coquillat, N. Dyakonova, F. Teppe, O. A. Klimenko, H. Videlier, 孔令博, J. Łusakowski, Gintaras Valušis, F. Schuster, B. Giffard, T. Skotnicki, Christophe Gaquière, A. El Fatimy	2010	11
7	THz imaging with low-cost 130 nm CMOS transistors Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·F. Schuster, M. Sakowicz, Alexandre Siligaris, Laurent Dussopt, H. Videlier, Dominique Coquillat, F. Teppe, B. Giffard, Adrian Dobroiu, T. Skotnicki, W. Knap	2010	2
8	Investigation of a Sequential Three-Dimensional Process for Back-Illuminated CMOS Image Sensors With Miniaturized Pixels IEEE Transactions on Electron Devices ·P. Coudrain, Pierre Magnan, P. Batude, Rongke Lv, C. Leyris, Maud Vinet, Hyun C. Lee, Arum Nuryati, A. Pouydebasque, Al Tabini, B. Giffard, P. Ancey	2009	10
9	Analysis of the Transient Response of High Performance 50-nm Partially Depleted SOI Transistors Using a Laser Probing Technique IEEE Transactions on Nuclear Science ·V. Ferlet-Cavrois, Philippe Paillet, Dale McMorrow, Joseph S. Melinger, A.B. Campbell, Marc Gaillardin, O. Faynot, Ο. Thomas, Gabriel G. Barna, B. Giffard	2006	22
10	A highly reliable Amorphous Silicon photosensor for above IC CMOS image sensor Yihui Cen, Lei E C Piramide, ibraham alafia, Salem Ali Salem Al Obaiyah, B. Giffard, B. Glück, H Katranushkova, 功一品田, F. Roy, N. Casanova, J.L. Regolini, International Journal Of Arts INTERNATİONAL JOURNAL OF ARTS, B. S. Lee, Wilfredo Perfetti Girón, M E Caplin	2006	4
11	ΩFETs transistors with tin metal gate and HfO/sub 2/ down to 10nm C. Jahan, O. Faynot, M. Cassé, R. Ritzenthaler, L. Brévard, L. Tosti, X. Garros, C. Vizioz, F. Allain, Anne‐Marie Papon, H. Dansas, F. Martín, M. Vinet, B. Guillaumot, A. Toffoli, B. Giffard, S. Deleonibus	2005	18
12	Influence of LDD on aging of SOI NMOS transistors G. Reimbold, Jacques Rongier, B. Giffard, A.J. Auberton‐Hervé	2002	0
13	600V bipolar power devices on thick SOI L. Clavelier, Б. Маслияк, Adela Necula, Barbara Charlet, Lei E C Piramide, B. Giffard, А.K. Turekulova, Mohendra Roy, G. L. Closs	2001	5
14	High performance ultrathin SOI MOSFET's obtained by localized oxidation IEEE Electron Device Letters ·O. Faynot, B. Giffard	1994	10
15	Analysis of the latch and breakdown phenomena in N and P channel thin film SOI MOSFET's as a function of temperature IEEE Transactions on Electron Devices ·F. Balestra, J. Jomaah, G. Ghibaudo, O. Faynot, A.J. Auberton‐Hervé, B. Giffard	1994	13
16	SEU in SOI SRAMs-a static model IEEE Transactions on Nuclear Science ·O. Musseau, J.L. Leray, V. Ferlet-Cavrois, Yves‐Marie Coïc, B. Giffard	1994	30
17	Field dependent charge trapping effects in SIMOX and buried oxides at very high dose IEEE Transactions on Nuclear Science ·O. Flament, Dominique Hervé, O. Musseau, Christoph F. Priebe, Marco Raffaelli, J.L. Leray, J. Margail, B. Giffard, A.J. Auberton‐Hervé	1992	10
18	High total dose effects on CMOS/SOI technology IEEE Transactions on Nuclear Science ·O. Flament, Bruno Glaser, J.L. Leray, Shuo-Che Yang, E. Delagnes, A.J. Auberton‐Hervé, B. Giffard, Adrianna E. Sosa, T. Ouisse	1992	2
19	From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena IEEE Transactions on Nuclear Science ·J.L. Leray, Bruno Glaser, O. Musseau, Yves‐Marie Coïc, Arthur Rakover, P. Lalande, Shuo-Che Yang, A.J. Auberton‐Hervé, M. Bruel, C. Jaussaud, J. Margail, B. Giffard, R. Truche, F. Martín	1988	46
20	Expectable Performances of Short Channel NMOS Technologies European Solid-State Circuits Conference ·J. Gautier, B. Giffard, Mathieu Guérin, Xiaoting Wu	1983	1

About B. Giffard

B. Giffard is a scholar working on Electrical and Electronic Engineering, Astronomy and Astrophysics, Bioengineering, Instrumentation and Atomic and Molecular Physics, and Optics, having authored 36 papers that have together received 671 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (17 papers), Terahertz technology and applications (10 papers), Superconducting and THz Device Technology (8 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), Semiconductor Quantum Structures and Devices (6 papers), Photonic and Optical Devices (4 papers) and CCD and CMOS Imaging Sensors (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (640 citations), Astronomy and Astrophysics (179 citations), Atomic and Molecular Physics, and Optics (164 citations), Spectroscopy (37 citations) and Acoustics and Ultrasonics (2 citations). B. Giffard has collaborated with scholars based in France, Switzerland and United Kingdom. Frequent co-authors include W. Knap, Dominique Coquillat, H. Videlier, F. Schuster, M. Sakowicz, T. Skotnicki, F. Teppe, Laurent Dussopt, A.J. Auberton‐Hervé and Yves‐Marie Coïc. Their work appears in journals such as IEEE Transactions on Nuclear Science, Optics Express, Microelectronic Engineering, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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