J.L. Leray

603 total citations
28 papers, 441 citations indexed

About

J.L. Leray is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J.L. Leray has authored 28 papers receiving a total of 441 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J.L. Leray's work include Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). J.L. Leray is often cited by papers focused on Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). J.L. Leray collaborates with scholars based in France, Switzerland and United States. J.L. Leray's co-authors include R. A. B. Devine, P. Paillet, Jean‐Luc Autran, O. Flament, J. Margail, O. Musseau, V. Ferlet-Cavrois, L. Vallier, A.J. Auberton‐Hervé and J.L. Pelloie and has published in prestigious journals such as Applied Physics Letters, Journal of Non-Crystalline Solids and Journal of Crystal Growth.

In The Last Decade

J.L. Leray

28 papers receiving 421 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.L. Leray France 12 407 108 40 20 18 28 441
M.C. Habrard France 4 296 0.7× 189 1.8× 13 0.3× 28 1.4× 22 1.2× 6 308
G. Weidner Germany 10 281 0.7× 171 1.6× 37 0.9× 31 1.6× 10 0.6× 37 315
Hussein M. Ayedh Norway 9 397 1.0× 135 1.3× 48 1.2× 19 0.9× 10 0.6× 30 419
K. Reid United States 8 320 0.8× 168 1.6× 37 0.9× 25 1.3× 25 1.4× 22 381
K. P. Bastos Brazil 11 296 0.7× 143 1.3× 47 1.2× 5 0.3× 35 1.9× 29 336
D. Wristers United States 9 344 0.8× 118 1.1× 26 0.7× 16 0.8× 22 1.2× 25 354
F. Pio Italy 11 253 0.6× 193 1.8× 30 0.8× 17 0.8× 17 0.9× 32 349
G. Giroult-Matlakowski France 6 334 0.8× 96 0.9× 20 0.5× 36 1.8× 33 1.8× 12 354
Y. Ma United States 9 307 0.8× 147 1.4× 37 0.9× 13 0.7× 11 0.6× 17 320
J. D. Parsons United States 14 258 0.6× 96 0.9× 38 0.9× 13 0.7× 47 2.6× 36 359

Countries citing papers authored by J.L. Leray

Since Specialization
Citations

This map shows the geographic impact of J.L. Leray's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.L. Leray with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.L. Leray more than expected).

Fields of papers citing papers by J.L. Leray

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.L. Leray. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.L. Leray. The network helps show where J.L. Leray may publish in the future.

Co-authorship network of co-authors of J.L. Leray

This figure shows the co-authorship network connecting the top 25 collaborators of J.L. Leray. A scholar is included among the top collaborators of J.L. Leray based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.L. Leray. J.L. Leray is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsiligiannis, Georgios, S. Girard, J.L. Leray, et al.. (2019). Proceedings of the 17. European Conference on Radiation and Its Effects on Components and Systems (RADECS 2017). 4 indexed citations
2.
Gaillardin, Marc, Sylvain Girard, P. Paillet, et al.. (2013). Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments. IEEE Transactions on Nuclear Science. 60(4). 2590–2597. 21 indexed citations
3.
Michez, A., et al.. (2002). Radiation induced shift study in parasitic MOS structures by 2D numerical simulation. 45–49. 3 indexed citations
4.
Torres, A., O. Flament, C. Marcandella, O. Musseau, & J.L. Leray. (2000). Spatial and spectral oxide trap distributions in power MOSFETs. IEEE Transactions on Nuclear Science. 47(3). 587–591. 7 indexed citations
5.
Flament, O., et al.. (1998). A methodology to study lateral parasitic transistors in CMOS technologies. IEEE Transactions on Nuclear Science. 45(3). 1385–1389. 14 indexed citations
6.
Autran, Jean‐Luc, et al.. (1997). Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena. IEEE Transactions on Nuclear Science. 44(6). 2007–2012. 12 indexed citations
7.
Devine, R. A. B., C. Chaneliere, Jean‐Luc Autran, et al.. (1997). Use of carbon-free Ta2O5 thin-films as a gate insulator. Microelectronic Engineering. 36(1-4). 61–64. 25 indexed citations
8.
Devine, R. A. B., L. Vallier, Jean‐Luc Autran, P. Paillet, & J.L. Leray. (1996). Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source. Applied Physics Letters. 68(13). 1775–1777. 59 indexed citations
9.
Paillet, P., Jean‐Luc Autran, O. Flament, et al.. (1996). X-radiation response of SIMOX buried oxides: influence of the fabrication process. IEEE Transactions on Nuclear Science. 43(3). 821–825. 13 indexed citations
10.
Autran, J.L., et al.. (1996). Annealing of Stress-Induced Interface and Border Traps in MOS Devices: A Charge-Pumping Study. 851–854. 5 indexed citations
11.
Paillet, Philippe, Jean‐Luc Autran, J.L. Leray, B. Aspar, & A.J. Auberton‐Hervé. (1995). Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides. IEEE Transactions on Nuclear Science. 42(6). 2108–2113. 26 indexed citations
12.
Paillet, P., P. Gonon, C. Schwebel, & J.L. Leray. (1995). Comparison of X-ray-induced electron and hole trapping in various materials (YSZ, SIMOX, thermal SiO2). Journal of Non-Crystalline Solids. 187. 170–174. 2 indexed citations
13.
Dentan, M., E. Delagnes, N. Fourches, et al.. (1993). Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics. IEEE Transactions on Nuclear Science. 40(6). 1555–1560. 27 indexed citations
14.
Paillet, P., Dominique Hervé, J.L. Leray, & R. A. B. Devine. (1993). Effect of high temperature processing of Si/SiO2/Si structures on their response to x-ray irradiation. Applied Physics Letters. 63(15). 2088–2090. 11 indexed citations
15.
Flament, O., J.L. Leray, E. Delagnes, et al.. (1992). High total dose effects on CMOS/SOI technology. IEEE Transactions on Nuclear Science. 39(3). 376–380. 2 indexed citations
16.
Flament, O., Dominique Hervé, O. Musseau, et al.. (1992). Field dependent charge trapping effects in SIMOX and buried oxides at very high dose. IEEE Transactions on Nuclear Science. 39(6). 2132–2138. 10 indexed citations
17.
Hervé, Dominique, P. Paillet, & J.L. Leray. (1992). Thermal Annealing of Radiation-Induced Trapped Charge in Simox and Thermal Oxide Thin Films. MRS Proceedings. 284. 2 indexed citations
18.
Leray, J.L., J. Margail, & R. A. B. Devine. (1992). Electric field dependent paramagnetic defect creation in single-step high dose oxygen implanted SIMOX films. Materials Science and Engineering B. 12(1-2). 153–156. 9 indexed citations
19.
Touboul, A., et al.. (1992). Effect of X-ray radiation on MOSFET's (SIMOX) LF excess noise. IEEE Transactions on Nuclear Science. 39(3). 367–371. 10 indexed citations
20.
Devine, R. A. B., J.L. Leray, & J. Margail. (1991). Ultraviolet radiation induced defect creation in buried SiO2 layers. Applied Physics Letters. 59(18). 2275–2277. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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