O. Flament

1.4k total citations
61 papers, 1.0k citations indexed

About

O. Flament is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Materials Chemistry. According to data from OpenAlex, O. Flament has authored 61 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 8 papers in Hardware and Architecture and 4 papers in Materials Chemistry. Recurrent topics in O. Flament's work include Semiconductor materials and devices (43 papers), Radiation Effects in Electronics (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (34 papers). O. Flament is often cited by papers focused on Semiconductor materials and devices (43 papers), Radiation Effects in Electronics (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (34 papers). O. Flament collaborates with scholars based in France, United States and Italy. O. Flament's co-authors include V. Ferlet-Cavrois, J.L. Leray, J. Baggio, O. Musseau, A. Torres, P. Paillet, J.L. Leray, O. Faynot, J.L. Pelloie and Daniel M. Fleetwood and has published in prestigious journals such as Applied Physics Letters, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms and Solid-State Electronics.

In The Last Decade

O. Flament

60 papers receiving 967 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
O. Flament France 20 989 121 84 50 47 61 1.0k
Toshio Hirao Japan 14 627 0.6× 56 0.5× 47 0.6× 57 1.1× 22 0.5× 68 695
Arto Javanainen Finland 21 1.3k 1.3× 101 0.8× 106 1.3× 76 1.5× 43 0.9× 69 1.4k
L. Artola France 17 909 0.9× 234 1.9× 87 1.0× 104 2.1× 46 1.0× 60 1.0k
R.K. Lawrence United States 16 771 0.8× 96 0.8× 34 0.4× 138 2.8× 38 0.8× 52 800
T. Hirao Japan 16 605 0.6× 87 0.7× 51 0.6× 73 1.5× 28 0.6× 51 670
O. Musseau France 18 1.0k 1.1× 179 1.5× 44 0.5× 80 1.6× 34 0.7× 64 1.1k
M. Muschitiello Netherlands 12 375 0.4× 34 0.3× 40 0.5× 20 0.4× 44 0.9× 46 426
D.E. Beutler United States 10 260 0.3× 18 0.1× 97 1.2× 67 1.3× 59 1.3× 26 370
G.K. Lum United States 10 259 0.3× 55 0.5× 45 0.5× 42 0.8× 36 0.8× 30 332
E.B. Smith United States 10 240 0.2× 64 0.5× 43 0.5× 105 2.1× 16 0.3× 22 332

Countries citing papers authored by O. Flament

Since Specialization
Citations

This map shows the geographic impact of O. Flament's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. Flament with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. Flament more than expected).

Fields of papers citing papers by O. Flament

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. Flament. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. Flament. The network helps show where O. Flament may publish in the future.

Co-authorship network of co-authors of O. Flament

This figure shows the co-authorship network connecting the top 25 collaborators of O. Flament. A scholar is included among the top collaborators of O. Flament based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. Flament. O. Flament is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Ferlet-Cavrois, V., Dale McMorrow, Daisuke Kobayashi, et al.. (2009). A New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation. IEEE Transactions on Nuclear Science. 56(4). 2014–2020. 18 indexed citations
4.
Lambert, Damien, J. Baggio, G. Hubert, et al.. (2006). Analysis of Quasi-Monoenergetic Neutron and Proton SEU Cross Sections for Terrestrial Applications. IEEE Transactions on Nuclear Science. 53(4). 1890–1896. 30 indexed citations
5.
L’Hoir, A., et al.. (2006). Monte-Carlo simulations of ion track in silicon and influence of its spatial distribution on single event effects. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 245(2). 464–474. 20 indexed citations
6.
Lambert, Damien, J. Baggio, G. Hubert, et al.. (2005). Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions. IEEE Transactions on Nuclear Science. 52(6). 2332–2339. 24 indexed citations
7.
Flament, O., et al.. (2004). 14 MeV Neutron-Induced SEU in SRAM Devices. ESASP. 536. 649. 1 indexed citations
8.
Leray, J.L., J. Baggio, V. Ferlet-Cavrois, & O. Flament. (2004). Atmospheric neutron effects in advanced microelectronics, standards and applications. 311–321. 6 indexed citations
9.
Lambert, Damien, J. Baggio, V. Ferlet-Cavrois, et al.. (2004). Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments. IEEE Transactions on Nuclear Science. 51(6). 3435–3441. 36 indexed citations
10.
Flament, O., et al.. (2004). 14 MeV neutron-induced SEU in SRAM devices. IEEE Transactions on Nuclear Science. 51(5). 2908–2911. 25 indexed citations
11.
Flament, O., A. Torres, & V. Ferlet-Cavrois. (2003). Bias dependence of FD transistor response to total dose irradiation. IEEE Transactions on Nuclear Science. 50(6). 2316–2321. 49 indexed citations
12.
Torres, A., O. Flament, C. Marcandella, O. Musseau, & J.L. Leray. (2000). Spatial and spectral oxide trap distributions in power MOSFETs. IEEE Transactions on Nuclear Science. 47(3). 587–591. 7 indexed citations
13.
Flament, O., et al.. (2000). Radiation tolerance of npn bipolar technology with 30 GHz Ft. IEEE Transactions on Nuclear Science. 47(3). 654–658. 3 indexed citations
14.
Flament, O., et al.. (2000). DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown. Materials science forum. 338-342. 1215–1218. 1 indexed citations
15.
Paillet, P., Jean‐Luc Autran, O. Flament, et al.. (1996). X-radiation response of SIMOX buried oxides: influence of the fabrication process. IEEE Transactions on Nuclear Science. 43(3). 821–825. 13 indexed citations
16.
Flament, O., Jean‐Luc Autran, P. Roche, et al.. (1996). Enhanced total dose damage in junction field effect transistors and related linear integrated circuits. IEEE Transactions on Nuclear Science. 43(6). 3060–3067. 18 indexed citations
17.
Flament, O., et al.. (1996). Dynamic single event effects in a CMOS/thick SOI shift register. IEEE Transactions on Nuclear Science. 43(3). 960–966. 4 indexed citations
18.
Dentan, M., E. Delagnes, N. Fourches, et al.. (1993). Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics. IEEE Transactions on Nuclear Science. 40(6). 1555–1560. 27 indexed citations
19.
Flament, O., J.L. Leray, E. Delagnes, et al.. (1992). High total dose effects on CMOS/SOI technology. IEEE Transactions on Nuclear Science. 39(3). 376–380. 2 indexed citations
20.
Flament, O., Dominique Hervé, O. Musseau, et al.. (1992). Field dependent charge trapping effects in SIMOX and buried oxides at very high dose. IEEE Transactions on Nuclear Science. 39(6). 2132–2138. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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