A. Persico

623 total citations
18 papers, 148 citations indexed

About

A. Persico is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, A. Persico has authored 18 papers receiving a total of 148 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 7 papers in Polymers and Plastics. Recurrent topics in A. Persico's work include Phase-change materials and chalcogenides (14 papers), Chalcogenide Semiconductor Thin Films (11 papers) and Advanced Memory and Neural Computing (7 papers). A. Persico is often cited by papers focused on Phase-change materials and chalcogenides (14 papers), Chalcogenide Semiconductor Thin Films (11 papers) and Advanced Memory and Neural Computing (7 papers). A. Persico collaborates with scholars based in France, Italy and Switzerland. A. Persico's co-authors include L. Perniola, V. Sousa, B. De Salvo, C. Jahan, G. Navarro, S. Maı̂trejean, A. Roule, A. Toffoli, J. F. Nodin and P. Zuliani and has published in prestigious journals such as Solid-State Electronics, Microelectronics Reliability and Microelectronic Engineering.

In The Last Decade

A. Persico

18 papers receiving 146 citations

Peers

Countries citing papers authored by A. Persico

Since Specialization

Citations

This map shows the geographic impact of A. Persico's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Persico with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Persico more than expected).

Fields of papers citing papers by A. Persico

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Persico. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Persico. The network helps show where A. Persico may publish in the future.

Co-authorship network of co-authors of A. Persico

This figure shows the co-authorship network connecting the top 25 collaborators of A. Persico. A scholar is included among the top collaborators of A. Persico based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Persico. A. Persico is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

#	Work	Indexed citations
1	Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories 2019 ·Microelectronic Engineering ·(unknown), M. Bonvalot, (unknown), A. Persico, (unknown), (unknown), (unknown), (unknown), S. Martinie, (unknown), E. Jalaguier, E. Nowak	9
2	Data retention extraction methodology for perpendicular STT-MRAM 2016 ·HAL (Le Centre pour la Communication Scientifique Directe) ·(unknown), E. Nowak, R. C. Sousa, M. C. Cyrille, B. Delaët, T. Magis, A. Persico, J. Langer, (unknown), Lucian Prejbeanu, L. Perniola	16
3	N-Doping Impact in Optimized Ge-Rich Materials Based Phase-Change Memory 2016 ·G. Navarro, V. Sousa, Pierre Noé, (unknown), (unknown), (unknown), (unknown), C. Sabbione, A. Persico, A. Roule, O. Cueto, S. Blonkowski, F. Fillot, Nicolas Bernier, R. Annunziata, Massimo Borghi, (unknown), P. Zuliani, L. Perniola	16
4	Electrical performances of SiO<inf>2</inf>-doped GeTe for phase-change memory applications 2013 ·G. Navarro, A. Persico, (unknown), F. Aussenac, Pierre Noé, C. Jahan, L. Perniola, V. Sousa, Elisa Vianello, B. De Salvo	8
5	Material engineering of GexTe100−x compounds to improve phase-change memory performances 2013 ·Solid-State Electronics ·G. Navarro, V. Sousa, A. Persico, (unknown), A. Toffoli, (unknown), L. Perniola, S. Maı̂trejean, A. Roule, P. Zuliani, R. Annunziata, B. De Salvo	23
6	A technological and electrical study of self-aligned charge-trap split-gate memory devices 2013 ·Microelectronic Engineering ·(unknown), (unknown), A. Persico, (unknown), (unknown), F. Aussenac, R. Kies, G. Molas, (unknown), O. Cueto, B. De Salvo	3
7	Reliability study of carbon-doped GST stack robust against Pb-free soldering reflow 2013 ·(unknown), (unknown), G. Navarro, A. Persico, C. Jahan, (unknown), V. Delaye, D. Blachier, V. Sousa, L. Perniola, Elisa Vianello, B. De Salvo	3
8	Analysis of the effect of boron doping on GeTe Phase Change Memories 2012 ·(unknown), (unknown), L. Perniola, (unknown), A. Toffoli, (unknown), A. Roule, A. Persico, Bérangère Hyot, V. Sousa, B. De Salvo, G. Reimbold	2
9	High temperature reliability of μtrench Phase-Change Memory devices 2012 ·Microelectronics Reliability ·G. Navarro, (unknown), A. Persico, V. Sousa, J. F. Nodin, C. Jahan, F. Aussenac, V. Delaye, O. Cueto, L. Perniola, B. De Salvo	5
10	Phase Change Memory advanced electrical characterization for conventional and alternative applications 2012 ·A. Toffoli, Manan Suri, L. Perniola, A. Persico, C. Jahan, J. F. Nodin, V. Sousa, B. DeSalvo, G. Reimbold	3
11	Carbon-doped Ge₂Sb₂Te₅ phase-change memory devices featuring reduced RESET current and power consumption 2012 ·(unknown), C. Jahan, A. Toffoli, G. Navarro, (unknown), Pierre Noé, V. Sousa, L. Perniola, J. F. Nodin, A. Persico, S. Maı̂trejean, A. Roule, (unknown), (unknown), P. Zuliani, R. Annunziata, G. Reimbold, (unknown), B. De Salvo	6
12	Electrical Performances of Tellurium-Rich GexTe1-x Phase Change Memories 2011 ·G. Navarro, (unknown), Manan Suri, P. Zuliani, R. Annunziata, V. Sousa, L. Perniola, S. Maı̂trejean, A. Persico, A. Roule, A. Toffoli, B. De Salvo	3
13	Physical and electrical characterization of Germanium or Tellurium rich Ge<inf>x</inf>Te<inf>1−x</inf> for phase change memories 2011 ·(unknown), G. Navarro, (unknown), Manan Suri, L. Perniola, V. Sousa, S. Maı̂trejean, A. Persico, A. Roule, A. Toffoli, G. Reimbold, B. De Salvo, O. Faynot, P. Zuliani, R. Annunziata	3
14	Demonstration of Phase Change Memories devices using Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> films deposited by Atomic Layer Deposition 2011 ·S. Maı̂trejean, S. Lhostis, Suvi Haukka, C. Jahan, E. Gourvest, Raija Matero, Tom Blomberg, A. Toffoli, A. Persico, (unknown), M. Veillerot, Jean‐Paul Barnes, F. Pierre, F. Fillot, L. Perniola, V. Sousa, (unknown), F. Boulanger, B. De Salvo, T. Billon	2
15	Reset current reduction in phase-change memory cell using a thin interfacial oxide layer 2011 ·(unknown), C. Jahan, A. Toffoli, L. Perniola, V. Sousa, A. Persico, J. F. Nodin, H. Grampeix, F. Aussenac, B. De Salvo	10
16	Highly automated sequence for Phase Change Memory test structure characterization 2010 ·A. Toffoli, A. Fantini, Giovanni Betti Beneventi, L. Perniola, R. Kies, (unknown), J. F. Nodin, V. Sousa, A. Persico, J. Cluzel, C. Jahan, S. Maı̂trejean, G. Reimbold, B. DeSalvo, F. Boulanger	5
17	Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices 2009 ·A. Fantini, L. Perniola, M. Armand, J. F. Nodin, V. Sousa, A. Persico, J. Cluzel, C. Jahan, S. Maı̂trejean, S. Lhostis, A. Roule, (unknown), G. Reimbold, B. De Salvo, P. Mazoyer, D. Bensahel, F. Boulanger	29
18	ELECTROMIGRATION OF INTERCONNECTS OF A TiN/Cu/TiN/Ti STRUCTURE 1996 ·Quality and Reliability Engineering International ·Flavie Braud, (unknown), J. Palleau, J. Torrès, A. Persico, G. Reimbold	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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