F. Voillot

531 total citations
36 papers, 453 citations indexed

About

F. Voillot is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, F. Voillot has authored 36 papers receiving a total of 453 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Atomic and Molecular Physics, and Optics, 19 papers in Electrical and Electronic Engineering and 17 papers in Materials Chemistry. Recurrent topics in F. Voillot's work include Semiconductor Quantum Structures and Devices (22 papers), Semiconductor materials and devices (5 papers) and Silicon Nanostructures and Photoluminescence (5 papers). F. Voillot is often cited by papers focused on Semiconductor Quantum Structures and Devices (22 papers), Semiconductor materials and devices (5 papers) and Silicon Nanostructures and Photoluminescence (5 papers). F. Voillot collaborates with scholars based in France, United States and Venezuela. F. Voillot's co-authors include M. Brousseau, J. Barrau, Weizhou Tang, A. Madhukar, J.P. Peyrade, M. F. Thomsen, M. Goiran, S. M. Wasim, P. G. Newman and A. Madhukar and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

F. Voillot

36 papers receiving 420 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Voillot France 14 344 288 189 44 40 36 453
R. W. Streater Canada 12 250 0.7× 250 0.9× 105 0.6× 37 0.8× 42 1.1× 31 359
W. Koschel Germany 14 335 1.0× 460 1.6× 347 1.8× 42 1.0× 35 0.9× 17 615
S. L. Skala United States 8 302 0.9× 157 0.5× 99 0.5× 37 0.8× 40 1.0× 17 371
E. Koppensteiner Austria 13 294 0.9× 276 1.0× 191 1.0× 80 1.8× 38 0.9× 27 458
Bob Wilson 2 455 1.3× 455 1.6× 109 0.6× 76 1.7× 36 0.9× 4 570
M. Ozeki Japan 12 364 1.1× 396 1.4× 130 0.7× 105 2.4× 55 1.4× 36 487
D. Rioux United States 11 342 1.0× 385 1.3× 256 1.4× 35 0.8× 49 1.2× 31 549
S. M. Mokler United Kingdom 14 273 0.8× 345 1.2× 154 0.8× 32 0.7× 101 2.5× 32 476
D. C. Walters United States 8 366 1.1× 345 1.2× 112 0.6× 74 1.7× 24 0.6× 17 456
M. Baudet France 12 463 1.3× 337 1.2× 151 0.8× 57 1.3× 23 0.6× 25 526

Countries citing papers authored by F. Voillot

Since Specialization
Citations

This map shows the geographic impact of F. Voillot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Voillot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Voillot more than expected).

Fields of papers citing papers by F. Voillot

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Voillot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Voillot. The network helps show where F. Voillot may publish in the future.

Co-authorship network of co-authors of F. Voillot

This figure shows the co-authorship network connecting the top 25 collaborators of F. Voillot. A scholar is included among the top collaborators of F. Voillot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Voillot. F. Voillot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Deshayes, Yannick, Laurent Béchou, Thierry Buffeteau, et al.. (2010). Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses. Microelectronics Reliability. 50(9-11). 1568–1573. 17 indexed citations
2.
Jalabert, Laurent, et al.. (2001). Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer. Microelectronics Reliability. 41(7). 981–985. 6 indexed citations
3.
Ressier, Laurence, J.P. Peyrade, J. Barrau, & F. Voillot. (1997). Controlled dislocation slipping: an original method to create multiple quantum wire structures. Superlattices and Microstructures. 22(1). 35–41. 2 indexed citations
4.
Ressier, Laurence, F. Voillot, M. Goiran, J.P. Peyrade, & Christophe Vieu. (1996). Fractal analysis of atomic force microscopy pictures of slip lines on a GaAs/GaAlAs heterostructure plastically deformed to obtain quantum wires. Journal of Applied Physics. 79(11). 8298–8303. 9 indexed citations
5.
Rincón, C., Marie-Ange Arsène, S. M. Wasim, et al.. (1996). Analysis of the donor-acceptor recombination band in the photoluminescence spectra of CuInSe2. Materials Letters. 29(1-3). 87–90. 12 indexed citations
6.
Arsène, Marie-Ange, F. Voillot, J.P. Peyrade, et al.. (1996). Synthesis and growth of large stoichiometric single crystals of copper indium diselenide by horizontal varying gradient zone freeze technique. Journal of Crystal Growth. 158(1-2). 97–102. 24 indexed citations
7.
Guasch, C., F. Voillot, M. Goiran, et al.. (1994). Alternate method to produce quantum wires using dislocation slipping. Solid-State Electronics. 37(4-6). 567–569. 2 indexed citations
8.
Zavada, J. M., et al.. (1993). Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structures. Journal of Applied Physics. 73(12). 8489–8494. 6 indexed citations
9.
Goiran, M., C. Guasch, F. Voillot, et al.. (1993). Dimensional Reduction of GaAs Quantum Well Cut by Dislocation Slip Observed by Photoluminescence. Europhysics Letters (EPL). 23(9). 647–652. 12 indexed citations
10.
Marie, X., et al.. (1991). Exciton cooling and localization in GaAs/AlGaAs multiquantum well structures. Superlattices and Microstructures. 10(4). 415–420. 13 indexed citations
11.
Peyrade, J.P., et al.. (1991). Incremental creep testing: Application to the plasticity of InP between 0.31 and 0.77 Tm. Acta Metallurgica et Materialia. 39(10). 2361–2372. 2 indexed citations
12.
Amand, T., et al.. (1989). Exciton dynamics of GaAs-AlXGa1−XAs quantum wells by picosecond time resolved photoluminescence spectroscopy. Superlattices and Microstructures. 6(3). 323–328. 18 indexed citations
13.
Barrau, J., et al.. (1983). The zero-phonon luminescence from Cr2+ in InP. Physica B+C. 116(1-3). 456–460. 1 indexed citations
14.
Barrau, J., et al.. (1983). The zero-phonon luminescence from gold in silicon. Solid State Communications. 45(7). 645–647. 11 indexed citations
15.
Barrau, J., et al.. (1982). The “trigonal chromium” in GaAs: A new no-phonon luminescence spectroscopy at 0.84 eV. Solid State Communications. 44(3). 395–399. 19 indexed citations
16.
Voillot, F., et al.. (1981). The no-phonon luminescence at 0.84 eV in GaAs:Cr-the Zeeman splitting. Journal of Physics C Solid State Physics. 14(13). 1855–1862. 10 indexed citations
17.
Voillot, F., et al.. (1981). The fine structure of the 0.84 eV No-phonon luminescence in GaAs:Cr. physica status solidi (a). 64(1). K39–K41. 1 indexed citations
18.
Barrau, J., et al.. (1980). Cathodoluminescence de défauts dans le diamant naturel. Revue de Physique Appliquée. 15(1). 9–14. 5 indexed citations
19.
Voillot, F., et al.. (1980). The fine structure and the origin of the 0.84 eV no-phonon luminescence in GaAs : Cr. Journal de Physique Lettres. 41(17). 415–418. 15 indexed citations
20.
Barrau, J., et al.. (1980). Effect of compensation on recombination into Si doped (Ga, Al)As. Revue de Physique Appliquée. 15(4). 861–864. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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