M.A. Foad

1.2k total citations
91 papers, 869 citations indexed

About

M.A. Foad is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M.A. Foad has authored 91 papers receiving a total of 869 indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Electrical and Electronic Engineering, 32 papers in Computational Mechanics and 28 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M.A. Foad's work include Silicon and Solar Cell Technologies (57 papers), Integrated Circuits and Semiconductor Failure Analysis (54 papers) and Ion-surface interactions and analysis (32 papers). M.A. Foad is often cited by papers focused on Silicon and Solar Cell Technologies (57 papers), Integrated Circuits and Semiconductor Failure Analysis (54 papers) and Ion-surface interactions and analysis (32 papers). M.A. Foad collaborates with scholars based in United States, United Kingdom and Italy. M.A. Foad's co-authors include M.J. Caturla, T. Dı́az de la Rubia, Babak Sadigh, Thomas J. Lenosky, Silva K. Theiss, C.D.W. Wilkinson, H. Graoui, M. Watt, S. Thoms and C. D. W. Wilkinson and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M.A. Foad

79 papers receiving 823 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.A. Foad United States 17 747 371 248 231 90 91 869
G. F. A. van de Walle Netherlands 18 812 1.1× 689 1.9× 269 1.1× 202 0.9× 108 1.2× 45 1.0k
G. W. Blackmore United Kingdom 16 577 0.8× 333 0.9× 287 1.2× 113 0.5× 55 0.6× 49 677
L. C. Kimerling United States 16 1.1k 1.4× 556 1.5× 345 1.4× 114 0.5× 151 1.7× 47 1.2k
J. L. Zilko United States 18 655 0.9× 531 1.4× 219 0.9× 159 0.7× 68 0.8× 55 813
Osamu Sugiura Japan 18 706 0.9× 159 0.4× 434 1.8× 107 0.5× 89 1.0× 72 789
J. M. Bonar United Kingdom 15 1.0k 1.4× 899 2.4× 462 1.9× 109 0.5× 118 1.3× 67 1.3k
R. A. A. Kubiak United Kingdom 18 806 1.1× 543 1.5× 411 1.7× 135 0.6× 221 2.5× 69 994
E. J. H. Collart United Kingdom 15 566 0.8× 172 0.5× 161 0.6× 181 0.8× 58 0.6× 64 652
Karuppanan Sekar India 11 282 0.4× 224 0.6× 204 0.8× 95 0.4× 83 0.9× 40 478
K. Graff Germany 11 948 1.3× 533 1.4× 218 0.9× 102 0.4× 61 0.7× 20 1.0k

Countries citing papers authored by M.A. Foad

Since Specialization
Citations

This map shows the geographic impact of M.A. Foad's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.A. Foad with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.A. Foad more than expected).

Fields of papers citing papers by M.A. Foad

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.A. Foad. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.A. Foad. The network helps show where M.A. Foad may publish in the future.

Co-authorship network of co-authors of M.A. Foad

This figure shows the co-authorship network connecting the top 25 collaborators of M.A. Foad. A scholar is included among the top collaborators of M.A. Foad based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.A. Foad. M.A. Foad is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Foad, M.A., et al.. (2024). Text Correction for Modern Standard Arabic. Procedia Computer Science. 244. 371–377.
2.
Vandervorst, W., M. Jurczak, T. Hoffman, et al.. (2008). Conformal Doping of FINFETs: a Fabrication and Metrology Challenge. AIP conference proceedings. 449–456. 23 indexed citations
3.
4.
Ye, Zhiyuan, et al.. (2007). A study of low energy phosphorus implantation and annealing in Si:C epitaxial films. Semiconductor Science and Technology. 22(2). 171–174. 9 indexed citations
5.
Seebauer, Edmund G., et al.. (2006). Influence of surface adsorption in improving ultrashallow junction formation. Applied Physics Letters. 89(15). 6 indexed citations
6.
7.
Felch, Susan B., et al.. (2005). 90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 53–57. 1 indexed citations
8.
9.
Al-Bayati, A., S. N. Tandon, Ruth M. Doherty, et al.. (2003). Junction profiles of sub keV ion implantation for deep sub-quarter micron devices. Edinburgh Research Explorer. 568. 87–90.
10.
11.
Sadigh, Babak, Thomas J. Lenosky, M.J. Caturla, et al.. (2002). Large enhancement of boron solubility in silicon due to biaxial stress. Applied Physics Letters. 80(25). 4738–4740. 36 indexed citations
12.
Shyue, Jing‐Jong, et al.. (2002). SIMS depth profiling and SRIM simulation to lower energy antimony implantation into silicon. 625–628. 1 indexed citations
13.
Foad, M.A., et al.. (2000). Shallow junction formation by decaborane molecular ion implantation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(1). 445–449. 10 indexed citations
14.
Foad, M.A., et al.. (1999). Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants. MRS Proceedings. 568. 8 indexed citations
15.
Collart, E. J. H., et al.. (1998). Characterisation of Low Energy Boron Implantation and Fast Ramp-Up Rapid Thermal Annealing. MRS Proceedings. 525. 6 indexed citations
16.
Armour, D.G., et al.. (1995). Charged particle energy spectrometers and their applications in fundamental studies of wafer charging and ion beam tuning phenomena. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 39–42. 1 indexed citations
17.
Foad, M.A., et al.. (1992). CH4/H2: A universal reactive ion etch for II-VI semiconductors?. Applied Physics Letters. 60(20). 2531–2533. 35 indexed citations
18.
Cheung, Rebecca, S. Thoms, M. Watt, et al.. (1992). Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4. Semiconductor Science and Technology. 7(9). 1189–1198. 19 indexed citations
19.
Rahman, M., et al.. (1992). Defect Penetration During the Plasma Etching of Semiconductors. MRS Proceedings. 279. 8 indexed citations
20.
Doughty, G. F., Rebecca Cheung, M.A. Foad, et al.. (1991). Nanostructure Fabrication: Dry Etching Damage. MRS Proceedings. 236. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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