M.A. Foad

1.2k citations

91 papers · 869 indexed · h-index 17

Impact in

Electrical and Electronic Engineering top 5%
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices

Papers in ⓘ

Electrical and Electronic Engineering 87
- Silicon and Solar Cell Technologies 57
- Integrated Circuits and Semiconductor Failure Analysis 54
- Semiconductor materials and devices 31
- Advancements in Semiconductor Devices and Circuit Design 16
Computational Mechanics 32
- Ion-surface interactions and analysis 32

Co-authors: M.J. Caturla (5 shared papers)Thomas J. Lenosky (3 shared papers)T. Dı́az de la Rubia (4 shared papers)Babak Sadigh (3 shared papers)Silva K. Theiss (2 shared papers)C.D.W. Wilkinson (4 shared papers)H. Graoui (13 shared papers)M. Watt (6 shared papers)
Journals: Applied Physics Letters (11 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (10 papers)Journal of Applied Physics (3 papers)Semiconductor Science and Technology (3 papers)Applied Surface Science (1 paper)
Partner nations: United States United Kingdom Italy

In The Last Decade

M.A. Foad

79 papers receiving 823 citations

Peers

Countries citing papers authored by M.A. Foad

Since Specialization

Citations

This map shows the geographic impact of M.A. Foad's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.A. Foad with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.A. Foad more than expected).

Fields of papers citing papers by M.A. Foad

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.A. Foad. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.A. Foad. The network helps show where M.A. Foad may publish in the future.

Co-authors

The 25 scholars most cited alongside M.A. Foad, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.A. Foad Line = papers co-authored together M.A. Foad links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 91 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Mechanism of Boron Diffusion in Silicon: AnAb Initioand Kinetic Monte Carlo Study Physical Review Letters ·Babak Sadigh, Thomas J. Lenosky, Silva K. Theiss, M.J. Caturla, T. Dı́az de la Rubia, M.A. Foad	1999	148
2	Large enhancement of boron solubility in silicon due to biaxial stress Applied Physics Letters ·Babak Sadigh, Thomas J. Lenosky, M.J. Caturla, Andrew A. Quong, Lorin X. Benedict, T. Dı́az de la Rubia, Martin M. Giles, M.A. Foad, Catalin D. Spataru, Steven G. Louie	2002	36
3	CH4/H2: A universal reactive ion etch for II-VI semiconductors? Applied Physics Letters ·M.A. Foad, C.D.W. Wilkinson, C. Dunscomb, R. H. Williams	1992	35
4	Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants Applied Physics Letters ·Victor Moroz, Yong‐Seog Oh, Dipu Pramanik, H. Graoui, M.A. Foad	2005	35
5	Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs Journal of Applied Physics ·P. D. Wang, M.A. Foad, (unknown), S. Thoms, M. Watt, Rebecca Cheung, C.D.W. Wilkinson, S.P. Beaumont	1992	35
6	Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates ACS Applied Materials & Interfaces ·Liangliang Zhang, Yuzheng Guo, Vinayak Vishwanath Hassan, Kechao Tang, M.A. Foad, J. C. Woicik, P. Pianetta, John Robertson, Paul C. McIntyre	2016	33
7	Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans Applied Physics Letters ·J. A. Sharp, N. E. B. Cowern, R.P. Webb, K.J. Kirkby, D. Giubertoni, S. Gennaro, M. Bersani, M.A. Foad, F. Cristiano, Pier‐Francesco Fazzini	2006	31
8	Model for conductance in dry-etch damaged n-GaAs structures Applied Physics Letters ·M. Rahman, Nigel P. Johnson, M.A. Foad, A. R. Long, M. Holland, C.D.W. Wilkinson	1992	30
9	New technique for dry etch damage assessment of semiconductors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M.A. Foad, S. Thoms, C. D. W. Wilkinson	1993	24
10	Conformal Doping of FINFETs: a Fabrication and Metrology Challenge AIP conference proceedings ·W. Vandervorst, J.-L. Everaert, Eveline Rosseel, M. Jurczak, T. Hoffman, Pierre Eyben, Jay Mody, G. Zschätzsch, Sebastian Koelling, M. Gilbert, Ting‐Chung Poon, J. del Agua Borniquel, M.A. Foad, Ray Duffy, B. J. Pawlak, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko	2008	23
11	Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study Journal of Applied Physics ·Roger Smith, Marcus Shaw, R.P. Webb, M.A. Foad	1998	23
12	High-resolution dry etching of zinc telluride: characterization of etched surfaces by X-ray photoelectron spectroscopy, photoluminescence and Raman scattering Semiconductor Science and Technology ·M.A. Foad, M. Watt, A. P. Smart, C M Sotomayro Torres, C.D.W. Wilkinson, W. Kühn, Hans Wägner, Susanne E. Bauer, H. Leiderer, W. Gebhardt	1991	20
13	Reactive ion etching induced damage in GaAs and Al_0.3Ga_0.7As using SiCl₄ Semiconductor Science and Technology ·Rebecca Cheung, S. Thoms, M. Watt, M.A. Foad, (unknown), C.D.W. Wilkinson, U J Cox, R. A. Cowley, C. Dunscombe, R. H. Williams	1992	19
14	200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Michael Current, Dominik Clara Luz Lopes, M.A. Foad, Jonathan England, Cameron W. Jones, D. Su	1998	17
15	Nanometer fabrication techniques for wide-gap II-VI semiconductors and their optical characterization Journal of Electronic Materials ·(unknown), A. P. Smart, M. Watt, M.A. Foad, Kazuo Tsutsui, C. D. W. Wilkinson	1994	17
16	Reactive ion etching of II-VI semiconductors using a mixture of methane and hydrogen Electronics Letters ·M.A. Foad, A. P. Smart, M. Watt, (unknown), C. D. W. Wilkinson	1991	17
17	Elemental B distributions and clustering in low-energy B+ ion-implanted Si Applied Physics Letters ·T.-S. Wang, A.G. Cullis, E. J. H. Collart, A. Murrell, M.A. Foad	2000	16
18	Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation Applied Physics Letters ·D. De Salvador, G. Bisognin, M. Di Marino, E. Napolitani, A. Carnera, H. Graoui, M.A. Foad, F. Boscherini, S. Mirabella	2006	15
19	Process interactions between low-energy ion implantation and rapid-thermal annealing for optimized ultrashallow junction formation Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Murrell, E. J. H. Collart, M.A. Foad, D. Jennings	2000	14
20	Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon Journal of Applied Physics ·D. Giubertoni, G. Pepponi, S. Gennaro, M. Bersani, M. Alper Sahiner, Stephen P. Kelty, R. Doherty, M.A. Foad, M. Kah, K.J. Kirkby, J. C. Woicik, P. Pianetta	2008	12

About M.A. Foad

M.A. Foad is a scholar working on Electrical and Electronic Engineering, Computational Mechanics, Atomic and Molecular Physics, and Optics, Materials Chemistry and Surfaces, Coatings and Films, having authored 91 papers that have together received 869 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (57 papers), Integrated Circuits and Semiconductor Failure Analysis (54 papers), Ion-surface interactions and analysis (32 papers), Semiconductor materials and devices (31 papers), Semiconductor materials and interfaces (23 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Silicon Nanostructures and Photoluminescence (9 papers) and Electron and X-Ray Spectroscopy Techniques (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (747 citations), Atomic and Molecular Physics, and Optics (371 citations), Computational Mechanics (231 citations), Structural Biology (8 citations) and Materials Chemistry (248 citations). M.A. Foad has collaborated with scholars based in United States, United Kingdom and Italy. Frequent co-authors include M.J. Caturla, Thomas J. Lenosky, T. Dı́az de la Rubia, Babak Sadigh, Silva K. Theiss, C.D.W. Wilkinson, H. Graoui, M. Watt, S. Thoms and A. Murrell. Their work appears in journals such as Applied Physics Letters, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of Applied Physics, Semiconductor Science and Technology and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact