R.W. Murto

617 total citations
28 papers, 382 citations indexed

About

R.W. Murto is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R.W. Murto has authored 28 papers receiving a total of 382 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 2 papers in Computational Mechanics and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in R.W. Murto's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). R.W. Murto is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). R.W. Murto collaborates with scholars based in United States, Canada and United Kingdom. R.W. Murto's co-authors include Howard R. Huff, G. Bersuker, George Brown, Patrick Lysaght, Chadwin D. Young, P. Zeitzoff, Brendan Foran, P. Lysaght, Joel Barnett and J.H. Sim and has published in prestigious journals such as Applied Physics Letters, Journal of Non-Crystalline Solids and Japanese Journal of Applied Physics.

In The Last Decade

R.W. Murto

23 papers receiving 335 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R.W. Murto United States	11	371	97	30	22	14	28	382
Y.D. Chan United States	11	328 0.9×	50 0.5×	23 0.8×	28 1.3×	13 0.9×	48	332
K. Onishi United States	11	534 1.4×	134 1.4×	69 2.3×	38 1.7×	8 0.6×	25	554
Mats O. Andersson Sweden	12	340 0.9×	79 0.8×	97 3.2×	30 1.4×	5 0.4×	20	358
G.J. Hu United States	8	537 1.4×	83 0.9×	71 2.4×	12 0.5×	15 1.1×	12	543
J.D. Hayden United States	9	318 0.9×	35 0.4×	29 1.0×	10 0.5×	8 0.6×	34	326
K. Onishi United States	11	374 1.0×	70 0.7×	39 1.3×	42 1.9×	5 0.4×	18	380
Seiji Inumiya Japan	9	286 0.8×	42 0.4×	43 1.4×	27 1.2×	4 0.3×	47	302
F.K. Baker United States	8	291 0.8×	36 0.4×	51 1.7×	9 0.4×	15 1.1×	15	297
Tomasz Brożek United States	9	273 0.7×	48 0.5×	19 0.6×	26 1.2×	3 0.2×	76	292
C.D. Gunderson United States	6	237 0.6×	28 0.3×	46 1.5×	8 0.4×	8 0.6×	18	242

Countries citing papers authored by R.W. Murto

Since Specialization

Citations

This map shows the geographic impact of R.W. Murto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.W. Murto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.W. Murto more than expected).

Fields of papers citing papers by R.W. Murto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.W. Murto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.W. Murto. The network helps show where R.W. Murto may publish in the future.

Co-authorship network of co-authors of R.W. Murto

This figure shows the co-authorship network connecting the top 25 collaborators of R.W. Murto. A scholar is included among the top collaborators of R.W. Murto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.W. Murto. R.W. Murto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Young, Chadwin D., K. Matthews, Joel Barnett, et al.. (2004). Conventional poly-Si gate MOS-transistors with a novel, ultra-thin Hf-oxide layer. 167–168. 18 indexed citations

Bersuker, G., J.H. Sim, Chadwin D. Young, et al.. (2004). Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance. MRS Proceedings. 811. 25 indexed citations

Bersuker, G., Byoung Hun Lee, Joel Barnett, et al.. (2004). Integration issues of high-k gate stack: Process-induced charging. 479–484. 10 indexed citations

Peterson, Jeff J., Chadwin D. Young, Joel Barnett, et al.. (2004). Subnanometer Scaling of HfO[sub 2]/Metal Electrode Gate Stacks. Electrochemical and Solid-State Letters. 7(8). G164–G164. 22 indexed citations

Barnett, Joel, Mark Gardner, C. Huffman, et al.. (2004). Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface. MRS Proceedings. 811. 21 indexed citations

Young, Chadwin D., G. Bersuker, George Brown, et al.. (2004). Charge trapping in MOCVD hafnium-based gate field dielectric stack structures and its impact on device performance. 28–35. 14 indexed citations

Young, Chadwin D., G. Bersuker, George Brown, et al.. (2004). Charge trapping and device performance degradation in MOCVD hafnium-based gate dielectric stack structures. 597–598. 15 indexed citations

Young, Chadwin D., A. Kerber, Tuo‐Hung Hou, et al.. (2003). Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. 347–359. 6 indexed citations

Al-Bayati, A., S. N. Tandon, A. J. Mayur, et al.. (2003). Exploring the limits of pre-amorphization implants on controlling channeling and diffusion of low energy B implants and ultra shallow junction formation. 54–61. 3 indexed citations

10.

Al-Bayati, A., S. N. Tandon, Ruth M. Doherty, et al.. (2003). Junction profiles of sub keV ion implantation for deep sub-quarter micron devices. Edinburgh Research Explorer. 568. 87–90.

11.

Murto, R.W., et al.. (2003). An investigation of species dependence in germanium pre-amorphized and laser thermal annealed ultra-shallow abrupt junctions. 182–185. 2 indexed citations

12.

Ramanathan, Sasangan, et al.. (2003). PATHWAYS FOR ADVANCED TRANSISTORS USING HAFNIUM–BASED OXIDES BY ATOMIC LAYER DEPOSITION. 1 indexed citations

13.

Jones, K. S., et al.. (2003). Boron diffusion upon annealing of laser thermal processed silicon. 1998. 111–114. 6 indexed citations

14.

Lysaght, Patrick, et al.. (2003). Physicochemical properties of HfO2 in response to rapid thermal anneal. Applied Physics Letters. 82(8). 1266–1268. 49 indexed citations

15.

Lysaght, Patrick, et al.. (2002). Physical and Electrical Characterization of Hafnium Silicate Thin Films. MRS Proceedings. 745. 3 indexed citations

16.

Al-Bayati, A., S. N. Tandon, Ruth M. Doherty, et al.. (2002). Junction profiles of sub keV ion implantation for deep sub-quarter micron devices. Edinburgh Research Explorer.

17.

Lysaght, Patrick, et al.. (2002). Experimental observations of the thermal stability of high-k gate dielectric materials on silicon. Journal of Non-Crystalline Solids. 303(1). 54–63. 51 indexed citations

18.

Lysaght, Patrick, et al.. (2002). Physical and Electrical Characterization of Hafnium Silicate Thin Films. MRS Proceedings. 747. 1 indexed citations

19.

Alshareef, Husam N., G. Bersuker, George Brown, et al.. (2001). Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation. Applied Physics Letters. 78(24). 3875–3877. 15 indexed citations

20.

Jones, K. S., et al.. (2000). Boron Activation During Solid Phase Epitaxial Regrowth. MRS Proceedings. 610. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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