L. Clément

720 total citations
34 papers, 465 citations indexed

About

L. Clément is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, L. Clément has authored 34 papers receiving a total of 465 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 8 papers in Surfaces, Coatings and Films. Recurrent topics in L. Clément's work include Integrated Circuits and Semiconductor Failure Analysis (15 papers), Semiconductor materials and devices (10 papers) and Electron and X-Ray Spectroscopy Techniques (8 papers). L. Clément is often cited by papers focused on Integrated Circuits and Semiconductor Failure Analysis (15 papers), Semiconductor materials and devices (10 papers) and Electron and X-Ray Spectroscopy Techniques (8 papers). L. Clément collaborates with scholars based in France, Switzerland and United States. L. Clément's co-authors include Jean‐Luc Rouvière, R. Pantel, Armand Béché, L.F.Tz. Kwakman, Jean‐Michel Hartmann, C. Roucau, Florent Houdellier, F. Lorut, E.F. Rauch and Alexia Valéry and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Acta Materialia.

In The Last Decade

L. Clément

33 papers receiving 457 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Clément France 9 244 174 143 141 112 34 465
V. Burak Özdöl United States 8 107 0.4× 163 0.9× 210 1.5× 95 0.7× 127 1.1× 16 430
Sean Hillyard United States 5 134 0.5× 174 1.0× 120 0.8× 74 0.5× 138 1.2× 6 329
F. Lorut France 11 298 1.2× 66 0.4× 109 0.8× 70 0.5× 73 0.7× 51 459
Paul Ronsheim United States 13 742 3.0× 136 0.8× 238 1.7× 373 2.6× 102 0.9× 40 1.0k
Ilona Müllerová Czechia 15 350 1.4× 273 1.6× 135 0.9× 102 0.7× 454 4.1× 71 609
C. Lehrer Germany 13 399 1.6× 121 0.7× 92 0.6× 143 1.0× 139 1.2× 23 600
Daryl A. Smith United States 11 219 0.9× 225 1.3× 80 0.6× 32 0.2× 209 1.9× 16 435
Javier Pablo‐Navarro Spain 12 86 0.4× 126 0.7× 127 0.9× 265 1.9× 69 0.6× 20 419
Norio Hirashita Japan 16 814 3.3× 59 0.3× 235 1.6× 198 1.4× 42 0.4× 56 945
Moritz Seyfried Germany 8 166 0.7× 56 0.3× 113 0.8× 145 1.0× 65 0.6× 19 361

Countries citing papers authored by L. Clément

Since Specialization
Citations

This map shows the geographic impact of L. Clément's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Clément with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Clément more than expected).

Fields of papers citing papers by L. Clément

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Clément. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Clément. The network helps show where L. Clément may publish in the future.

Co-authorship network of co-authors of L. Clément

This figure shows the co-authorship network connecting the top 25 collaborators of L. Clément. A scholar is included among the top collaborators of L. Clément based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Clément. L. Clément is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Özcan, Ahmet S., C. Lavoie, Alexia Valéry, et al.. (2017). Impact of laser anneal on NiPt silicide texture and chemical composition. Journal of Applied Physics. 121(22). 7 indexed citations
2.
Valéry, Alexia, E.F. Rauch, L. Clément, & F. Lorut. (2017). Retrieving overlapping crystals information from TEM nano‐beam electron diffraction patterns. Journal of Microscopy. 268(2). 208–218. 23 indexed citations
3.
Valéry, Alexia, Alexandre Pofelski, L. Clément, F. Lorut, & E.F. Rauch. (2016). TEM illumination settings study for optimum spatial resolution and indexing reliability in crystal orientation mappings. Micron. 92. 43–50. 5 indexed citations
4.
Valéry, Alexia, E.F. Rauch, Alexandre Pofelski, L. Clément, & F. Lorut. (2015). Dealing With Multiple Grains in TEM Lamellae Thickness for Microstructure Analysis Using Scanning Precession Electron Diffraction. Microscopy and Microanalysis. 21(S3). 1243–1244. 4 indexed citations
5.
Clément, L., et al.. (2013). Advanced TEM Characterization for the Development of 28-14nm nodes based on fully-depleted Silicon-on-Insulator Technology. Journal of Physics Conference Series. 471. 12026–12026. 8 indexed citations
6.
Beneyton, R., et al.. (2013). Macroscopic and nanometer scale stress measurement of Ni(Pt)Si silicide: Impact of thermal treatments ranging from millisecond to several hours. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(1). 3 indexed citations
7.
Pofelski, Alexandre, et al.. (2013). Characterization of Stress Transfer from Process Induced Stressor Layer to Substrate in MOSFETs. ECS Transactions. 50(4). 241–248. 1 indexed citations
8.
9.
Clément, L.. (2012). Large deviations for self-intersection local times in subcritical dimensions. Electronic Journal of Probability. 17(none).
10.
11.
Benoit, Daniel L., L. Clément, P. Morin, et al.. (2011). Characterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channels. AIP conference proceedings. 90–94. 3 indexed citations
12.
Haxaire, K., et al.. (2010). Microstructure and texture analysis of narrow copper line versus widths and annealing for reliability improvement. Microelectronic Engineering. 88(5). 661–665. 6 indexed citations
13.
Béché, Armand, et al.. (2010). Improved accuracy in nano beam electron diffraction. Journal of Physics Conference Series. 209. 12063–12063. 12 indexed citations
14.
Kilpeläinen, Simo, J. Slotte, Filip Tuomisto, et al.. (2009). Defect characterization of heavily As and P doped Si epilayers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(11). 2537–2539. 1 indexed citations
15.
Béché, Armand, Jean‐Luc Rouvière, L. Clément, & Jean‐Michel Hartmann. (2009). Improved precision in strain measurement using nanobeam electron diffraction. Applied Physics Letters. 95(12). 125 indexed citations
16.
Clément, L., F. Cacho, R. Pantel, & Jean‐Luc Rouvière. (2009). Quantitative evaluation of process induced strain in MOS transistors by Convergent Beam Electron Diffraction. Micron. 40(8). 886–893. 6 indexed citations
17.
Clément, L. & D. Delille. (2008). Quantitative Strain Measurement in Sub-45 nm CMOS Transistors by Convergent Beam Electron Diffraction (CBED) at Low Temperature and Nano Beam Diffraction (NBD). Microscopy and Microanalysis. 14(S2). 386–387. 1 indexed citations
18.
Houdellier, Florent, et al.. (2006). Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers. Ultramicroscopy. 106(10). 951–959. 56 indexed citations
19.
Clément, L., R. Pantel, L.F.Tz. Kwakman, & Jean‐Luc Rouvière. (2004). Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations. Applied Physics Letters. 85(4). 651–653. 122 indexed citations
20.
Pantel, R., L. Clément, Jean‐Luc Rouvière, & L.F.Tz. Kwakman. (2003). Strain Measurements at a NiSi/Si Interface Using STEM-CBED: A Quantifaction Method for Stress Relaxation During TEM Lamella Preparation. Microscopy and Microanalysis. 9(S02). 866–867. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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