S. Rennesson

577 citations

28 papers · 457 indexed · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 18
- GaN-based semiconductor devices and materials 18
Electronic, Optical and Magnetic Materials 9
- Ga2O3 and related materials 8

Co-authors: Y. Cordier Sébastien Chenot G. Feuillet J. Zúñiga‐Pérez F. Sèmond Virginie Hoel Amador Pérez‐Tomás F. Lecourt
Journals: Applied Physics Letters (5 papers)Journal of Applied Physics (4 papers)physica status solidi (a) (3 papers)Optics Express (1 paper)Physical Review Applied (1 paper)
Partner nations: France Spain Germany

In The Last Decade

S. Rennesson

28 papers receiving 442 citations

Peers

Countries citing papers authored by S. Rennesson

Since Specialization

Citations

This map shows the geographic impact of S. Rennesson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Rennesson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Rennesson more than expected).

Fields of papers citing papers by S. Rennesson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Rennesson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Rennesson. The network helps show where S. Rennesson may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Rennesson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Rennesson Line = papers co-authored together S. Rennesson links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility Advanced Electronic Materials ·Thiago Augusto Michels, 和兆荣, Idriss Abid, L. Kończewicz, Sandrine Juillaguet, Sylvie Contreras, S. Rennesson, Giordano Dias Caprioli, M. Némoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Y. Cordier, Arndt Stüber	2024	5
2	Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate Electronics ·WeiXing Jin, S. Rennesson, Giordano Dias Caprioli, V. A. Gubkin, Fabrice Semond, Farid Medjdoub	2023	3
3	High Al-content AlGaN channel high electron mobility transistors on silicon substrate SHILAP Revista de lepidopterología ·和兆荣, 陈进学, Thiago Augusto Michels, Julien Pernot, Arndt Stüber, M. Némoz, Y. Cordier, S. Rennesson, Giordano Dias Caprioli, M. Mihalopoulos, Farid Medjdoub	2023	3
4	Comparison of Sub-Micron thick AlGaN/GaN and AlN/GaN HEMTs on Silicon for RF applications SPIRE - Sciences Po Institutional REpository ·WeiXing Jin, S. Rennesson, Fabrice Semond, Farid Medjdoub	2023	1
5	Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field physica status solidi (a) ·WeiXing Jin, S. Rennesson, Giordano Dias Caprioli, V. A. Gubkin, Fabrice Semond, Farid Medjdoub	2023	3
6	Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser Physical Review Applied ·陈永兆, 三郎諸頭, Dina Ayu Diningtias, Christelle Brimont, L. Doyennette, D. D. Solnyshkov, G. Malpuech, E. Cambril, S. Bouchoule, Blandine Alloing, S. Rennesson, F. Sèmond, J. Zúñiga‐Pérez, T. Guillet	2022	8
7	On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations Journal of Applied Physics ·P. Vennéguès, Ludovic Largeau, Virginie Brändli, B. Damilano, E. V. Gnedin, Rozenn Bernard, Aimeric Courville, S. Rennesson, F. Sèmond, G. Feuillet, Charles Cornet	2022	1
8	Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy Superlattices and Microstructures ·M. Némoz, F. Sèmond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche, J. Zúñiga‐Pérez	2021	12
9	Proposition of a model elucidating the AlN-on-Si (111) microstructure Journal of Applied Physics ·P. F. O'Leary, S. Rennesson, Éric Frayssinet, Ludovic Largeau, F. Sèmond, Jean‐Luc Rouvière, G. Feuillet, P. Vennéguès	2018	16
10	Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH₃‐MBE physica status solidi (a) ·S. Rennesson, Mathieu Leroux, Zoraida Valero Bravo, M. Némoz, Sébastien Chenot, J. Massies, Ludovic Largeau, Jara Líbia Costa Louredo, Malek Zegaoui, Farid Medjdoub, Fabrice Semond	2017	15
11	Short-wave infrared (.LAMBDA. = 3 .MU.m) intersubband polaritons in the GaN/AlN system Applied Physics Letters ·Yuzhi Wu, Dani Baumgartner, E. Monroy, Caroline B. Lim, S. Rennesson, F. Sèmond, F. H. Julien, R. Colombelli	2017	2
12	Efficient second harmonic generation in low-loss planar GaN waveguides Optics Express ·三郎諸頭, J. Brault, Aimeric Courville, S. Rennesson, Fabrice Semond, G. Feuillet, Pascal Baldi, P. Boucaud, Jean‐Yves Duboz, Marc de Micheli	2017	20
13	Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system Applied Physics Letters ·Yuzhi Wu, Jean‐Michel Manceau, E. Monroy, Caroline B. Lim, S. Rennesson, F. Sèmond, F. H. Julien, R. Colombelli	2017	8
14	Polarity in GaN and ZnO: Theory, measurement, growth, and devices Applied Physics Reviews ·J. Zúñiga‐Pérez, Vincent Consonni, L. Lymperakis, Xiang Kong, A. Trampert, Sergio Fernández‐Garrido, O. Brandt, H. Renevier, S. Keller, Karine Hestroffer, Markus R. Wagner, J. S. Reparaz, Fatih Akyol, Siddharth Rajan, S. Rennesson, Tomás Palacios, G. Feuillet	2016	110
15	Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs Semiconductor Science and Technology ·Sohier M. Abobakr, Jian Wu, S. Pérez, Muhammad Nailil Fahmi Fatah, Virginie Hoel, S. Rennesson, Y. Cordier, T. González, J. Mateos, I. Íñiguez-de-la-Torre	2016	8
16	III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet Applied Physics Letters ·Julien Sellés, Valentin Crépel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Sèmond, B. Gayral, Christelle Brimont, T. Guillet	2016	42
17	Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate IEEE Electron Device Letters ·Muhammad Nailil Fahmi Fatah, F. Lecourt, A Khalvat, N. Defrance, Étienne Okada, Marie Lesecq, S. Rennesson, Andrea Vicini, Y. Cordier, Virginie Hoel, Jean-Claude de Jaeger	2015	55
18	Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances IEEE Transactions on Electron Devices ·S. Rennesson, F. Lecourt, Nicolas Gafsi, Magdalena Chmielowska, Sébastien Chenot, Marie Lesecq, Virginie Hoel, Étienne Okada, Y. Cordier, Jean-Claude de Jaeger	2013	23
19	AlGaN/GaN HEMTs with an InGaN back‐barrier grown by ammonia‐assisted molecular beam epitaxy physica status solidi (a) ·S. Rennesson, B. Damilano, P. Vennéguès, Sébastien Chenot, Y. Cordier	2013	12
20	Opto-electrical characterization of infrared sensors based on carbon nanotube films Comptes Rendus Physique ·Charlie Koechlin, Sylvain Maine, S. Rennesson, Riad Haïdar, Голенков Валерий Валерьевич, Annick Loiseau, Jean-Luc Pélouard	2010	5

About S. Rennesson

S. Rennesson is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Polymers and Plastics, having authored 28 papers that have together received 457 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (8 papers), Semiconductor materials and devices (7 papers), Photonic and Optical Devices (5 papers), Radio Frequency Integrated Circuit Design (4 papers), Silicon Carbide Semiconductor Technologies (4 papers), Thermal Radiation and Cooling Technologies (3 papers) and Strong Light-Matter Interactions (3 papers). The work is most often cited by research in Condensed Matter Physics (302 citations), Electronic, Optical and Magnetic Materials (141 citations), Electrical and Electronic Engineering (270 citations), Atomic and Molecular Physics, and Optics (146 citations) and Structural Biology (5 citations). S. Rennesson has collaborated with scholars based in France, Spain and Germany. Frequent co-authors include Y. Cordier, Sébastien Chenot, G. Feuillet, J. Zúñiga‐Pérez, F. Sèmond, Virginie Hoel, Amador Pérez‐Tomás, F. Lecourt, Marie Lesecq and Jean-Claude de Jaeger. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, physica status solidi (a), Optics Express and Physical Review Applied.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact