N. Baron

590 total citations
26 papers, 500 citations indexed

About

N. Baron is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, N. Baron has authored 26 papers receiving a total of 500 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Condensed Matter Physics, 24 papers in Electrical and Electronic Engineering and 6 papers in Mechanics of Materials. Recurrent topics in N. Baron's work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (20 papers) and Ga2O3 and related materials (5 papers). N. Baron is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (20 papers) and Ga2O3 and related materials (5 papers). N. Baron collaborates with scholars based in France, Spain and United Kingdom. N. Baron's co-authors include Y. Cordier, Sébastien Chenot, J. C. Moreno, Amador Pérez‐Tomás, Marcel Placidi, A. Fontserè, F. Sèmond, O. Tottereau, Jordi Llobet and J. Massies and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nanotechnology.

In The Last Decade

N. Baron

26 papers receiving 486 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Baron France 14 429 352 189 109 92 26 500
Toshiya Tabuchi Japan 13 401 0.9× 335 1.0× 245 1.3× 164 1.5× 85 0.9× 35 498
S.J. Cai United States 10 334 0.8× 298 0.8× 152 0.8× 85 0.8× 106 1.2× 13 417
Yuuki Enatsu Japan 10 436 1.0× 307 0.9× 209 1.1× 108 1.0× 59 0.6× 14 461
Masayoshi Kosaki Japan 11 375 0.9× 233 0.7× 173 0.9× 113 1.0× 89 1.0× 28 401
Erin C. H. Kyle United States 14 576 1.3× 428 1.2× 364 1.9× 180 1.7× 100 1.1× 17 677
B. Peres United States 12 347 0.8× 282 0.8× 209 1.1× 100 0.9× 51 0.6× 21 401
Cory Lund United States 15 619 1.4× 398 1.1× 276 1.5× 195 1.8× 181 2.0× 31 698
Manuel Trejo United States 11 570 1.3× 458 1.3× 255 1.3× 138 1.3× 142 1.5× 18 622
Michele Esposto Italy 11 554 1.3× 449 1.3× 279 1.5× 132 1.2× 147 1.6× 18 621
B. Mensching Germany 8 408 1.0× 267 0.8× 188 1.0× 266 2.4× 85 0.9× 8 518

Countries citing papers authored by N. Baron

Since Specialization
Citations

This map shows the geographic impact of N. Baron's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Baron with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Baron more than expected).

Fields of papers citing papers by N. Baron

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Baron. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Baron. The network helps show where N. Baron may publish in the future.

Co-authorship network of co-authors of N. Baron

This figure shows the co-authorship network connecting the top 25 collaborators of N. Baron. A scholar is included among the top collaborators of N. Baron based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Baron. N. Baron is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pérez‐Tomás, Amador, A. Fontserè, Jordi Llobet, et al.. (2013). Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates. Journal of Applied Physics. 113(17). 58 indexed citations
2.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2012). Bulk Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN. ECS Solid State Letters. 2(1). P4–P7. 12 indexed citations
3.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2012). Reverse current thermal activation of AlGaN/GaN HEMTs on Si(111). Microelectronics Reliability. 52(11). 2547–2550. 3 indexed citations
4.
Pérez‐Tomás, Amador, A. Fontserè, Marcel Placidi, et al.. (2012). Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance. Semiconductor Science and Technology. 27(12). 125010–125010. 21 indexed citations
5.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2011). GaN Ohmic contact resistance vs temperature. 1–2. 3 indexed citations
6.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2011). Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN. Applied Physics Letters. 99(21). 46 indexed citations
7.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2011). Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET. Microelectronic Engineering. 88(10). 3140–3144. 25 indexed citations
8.
Cordier, Y., J. C. Moreno, N. Baron, et al.. (2010). Growth of GaN based structures on Si(110) by molecular beam epitaxy. Journal of Crystal Growth. 312(19). 2683–2688. 24 indexed citations
9.
Pérez‐Tomás, Amador, Marcel Placidi, N. Baron, et al.. (2010). 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility. Materials science forum. 645-648. 1207–1210. 4 indexed citations
10.
Baron, N., Y. Cordier, Sébastien Chenot, et al.. (2009). The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111). Journal of Applied Physics. 105(3). 49 indexed citations
11.
Pérez‐Tomás, Amador, Marcel Placidi, N. Baron, et al.. (2009). GaN transistor characteristics at elevated temperatures. Journal of Applied Physics. 106(7). 72 indexed citations
12.
Cordier, Y., J. C. Moreno, N. Baron, et al.. (2009). AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001). Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 13 indexed citations
13.
Sèmond, F., J. A. Bardwell, S. Rolfe, et al.. (2009). Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration. physica status solidi (a). 206(2). 371–374. 5 indexed citations
14.
Calle, F., Alejandro F. Braña, Y. Cordier, et al.. (2008). High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1971–1973. 25 indexed citations
15.
Cordier, Y., N. Baron, Sébastien Chenot, et al.. (2008). Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature. Journal of Crystal Growth. 311(7). 2002–2005. 20 indexed citations
16.
Contreras, Sylvie, B. Jouault, L. Kończewicz, et al.. (2008). Investigation of AlGaN∕AlN∕GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C. Applied Physics Letters. 92(4). 14 indexed citations
17.
Cordier, Y., M. Azize, N. Baron, et al.. (2007). AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination. Journal of Crystal Growth. 309(1). 1–7. 26 indexed citations
18.
Cordier, Y., M. Azize, N. Baron, et al.. (2007). Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures. Journal of Crystal Growth. 310(5). 948–954. 13 indexed citations
19.
Cordier, Y., et al.. (2007). In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy. Journal of Crystal Growth. 301-302. 71–74. 16 indexed citations
20.
Baron, N., et al.. (1966). Vapor pressure over conguently melting crystal hydrates and their solutions. Journal of Structural Chemistry. 7(6). 770–773. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Toshiya Tabuchi Breakdown of academic impact, for papers by S.J. Cai Breakdown of academic impact, for papers by Yuuki Enatsu Breakdown of academic impact, for papers by Masayoshi Kosaki Breakdown of academic impact, for papers by Erin C. H. Kyle Breakdown of academic impact, for papers by B. Peres Breakdown of academic impact, for papers by Cory Lund Breakdown of academic impact, for papers by Manuel Trejo Breakdown of academic impact, for papers by Michele Esposto Breakdown of academic impact, for papers by B. Mensching
Rankless by CCL
2026