B. Salem

2.1k total citations
148 papers, 1.6k citations indexed

About

B. Salem is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. Salem has authored 148 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 133 papers in Electrical and Electronic Engineering, 69 papers in Biomedical Engineering and 63 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. Salem's work include Semiconductor materials and devices (63 papers), Semiconductor Quantum Structures and Devices (51 papers) and Nanowire Synthesis and Applications (51 papers). B. Salem is often cited by papers focused on Semiconductor materials and devices (63 papers), Semiconductor Quantum Structures and Devices (51 papers) and Nanowire Synthesis and Applications (51 papers). B. Salem collaborates with scholars based in France, Tunisia and Canada. B. Salem's co-authors include T. Baron, P. Gentile, M. Gendry, G. Brémond, Bouraoui Ilahi, N. Pauc, F. Bassani, Vincent Consonni, T. Benyattou and J. Brault and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

B. Salem

142 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Salem France 22 1.3k 752 707 649 133 148 1.6k
Kun Peng China 16 645 0.5× 343 0.5× 506 0.7× 365 0.6× 101 0.8× 46 943
Johannes Svensson Sweden 23 1.3k 1.0× 409 0.5× 872 1.2× 538 0.8× 73 0.5× 72 1.7k
Zehan Yao China 19 574 0.5× 400 0.5× 293 0.4× 525 0.8× 331 2.5× 48 1.1k
Bjarke S. Jessen Denmark 18 1.0k 0.8× 530 0.7× 533 0.8× 2.1k 3.2× 212 1.6× 30 2.4k
Aron W. Cummings Spain 24 509 0.4× 889 1.2× 235 0.3× 1.4k 2.1× 86 0.6× 61 1.6k
Huaizhong Xing China 18 524 0.4× 300 0.4× 197 0.3× 615 0.9× 283 2.1× 95 1.0k
D. Deresmes France 23 995 0.8× 821 1.1× 489 0.7× 640 1.0× 178 1.3× 74 1.6k
Lucia V. Mercaldo Italy 19 791 0.6× 208 0.3× 309 0.4× 509 0.8× 223 1.7× 91 1.2k
Fabien Vialla France 14 546 0.4× 327 0.4× 299 0.4× 1.1k 1.8× 117 0.9× 31 1.3k
Masaru Sato Japan 19 1.1k 0.9× 321 0.4× 169 0.2× 174 0.3× 144 1.1× 153 1.3k

Countries citing papers authored by B. Salem

Since Specialization
Citations

This map shows the geographic impact of B. Salem's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Salem with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Salem more than expected).

Fields of papers citing papers by B. Salem

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Salem. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Salem. The network helps show where B. Salem may publish in the future.

Co-authorship network of co-authors of B. Salem

This figure shows the co-authorship network connecting the top 25 collaborators of B. Salem. A scholar is included among the top collaborators of B. Salem based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Salem. B. Salem is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Salem, B., et al.. (2025). Vibration Analysis Using Multi-Layer Perceptron Neural Networks for Rotor Imbalance Detection in Quadrotor UAV. Drones. 9(2). 102–102. 2 indexed citations
3.
Frayssinet, Éric, et al.. (2024). Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs. Electronics. 13(12). 2350–2350. 1 indexed citations
4.
Consonni, Vincent, Guillaume Gay, Hervé Roussel, et al.. (2023). High figure-of-merit in Al-doped ZnO thin films grown by ALD through the Al content adjustment. Materialia. 31. 101863–101863. 9 indexed citations
5.
Bassani, F., et al.. (2023). Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors. Advanced Electronic Materials. 10(3). 4 indexed citations
6.
Consonni, Vincent, Carmen Jiménez, Hervé Roussel, et al.. (2023). Correlation between the Dimensions and Piezoelectric Properties of ZnO Nanowires Grown by PLI-MOCVD with Different Flow Rates. SHILAP Revista de lepidopterología. 3(3). 220–235. 3 indexed citations
7.
Veillerot, M., E. Martínez, D. Mariolle, et al.. (2023). Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM. Solid-State Electronics. 208. 108743–108743. 1 indexed citations
8.
Vauche, Laura, Stéphane Cadot, E. Martínez, et al.. (2023). Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices. Solid-State Electronics. 209. 108780–108780. 1 indexed citations
9.
Eustache, Étienne, J. Aubin, Jean‐Michel Hartmann, et al.. (2021). Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors. Semiconductor Science and Technology. 36(6). 65018–65018. 5 indexed citations
10.
Martin, M., Christophe Jany, Léopold Virot, et al.. (2021). Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers. AIP Advances. 11(8). 8 indexed citations
11.
Luong, Minh Anh, Éric Robin, N. Pauc, et al.. (2020). Reversible Al Propagation in SixGe1–x Nanowires: Implications for Electrical Contact Formation. ACS Applied Nano Materials. 3(10). 10427–10436. 5 indexed citations
12.
Sistani, Masiar, B. Salem, T. Baron, et al.. (2020). Verifying the band gap narrowing in tensile strained Ge nanowires by electrical means. Nanotechnology. 32(14). 145711–145711. 8 indexed citations
13.
Martin, M., J. Moeyaert, B. Salem, et al.. (2020). O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate. Nanomaterials. 10(12). 2450–2450. 5 indexed citations
14.
Ecoffey, Serge, et al.. (2019). A fabrication process for self-connected horizontal SiGe nanowires. Microelectronic Engineering. 220. 111150–111150.
15.
Salem, B., Xavier Baillin, Hervé Roussel, et al.. (2019). Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications. Nanotechnology. 30(34). 345601–345601. 12 indexed citations
16.
Salem, B., et al.. (2019). Modeling the Elongation of Nanowires Grown by Chemical Bath Deposition Using a Predictive Approach. The Journal of Physical Chemistry. 1 indexed citations
17.
Salem, B., et al.. (2018). Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate. Nanoscale Research Letters. 13(1). 172–172. 10 indexed citations
18.
Drouin, Dominique, et al.. (2017). Fabrication of top-down gold nanostructures using a damascene process. Microelectronic Engineering. 177. 41–45. 7 indexed citations
19.
Ilahi, Bouraoui, Nicolas Chauvin, B. Salem, et al.. (2015). Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing. Journal of Alloys and Compounds. 656. 132–137. 10 indexed citations
20.
Barba, David, B. Salem, Vincent Aimez, et al.. (2005). りん打込みInGaAsP/InGaAs/InP中での量子井戸相互混合に対するイオンチャネリング効果. Journal of Applied Physics. 98(5). 54904–54904. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026