Hervé Morel

2.5k citations

126 papers · 1.7k indexed · h-index 18

Impact in

Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies
- Electromagnetic Compatibility and Noise Suppression
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electronic Packaging and Soldering Technologies
- Advanced DC-DC Converters
- Electrostatic Discharge in Electronics
- 3D IC and TSV technologies
Ceramics and Composites top 10%

Papers in

Electrical and Electronic Engineering 120
- Silicon Carbide Semiconductor Technologies 93
- Electromagnetic Compatibility and Noise Suppression 38
- Semiconductor materials and devices 32
- Advancements in Semiconductor Devices and Circuit Design 30
- Advanced DC-DC Converters 18
- Electrostatic Discharge in Electronics 15
Condensed Matter Physics 10
- GaN-based semiconductor devices and materials 10

Co-authors: Bruno Allard Cyril Buttay Christophe Raynaud Dominique Planson Dominique Bergogne Anis Ammous Dominique Tournier Sami Ghédira
Journals: Microelectronics Reliability (10 papers)IEEE Transactions on Power Electronics (8 papers)Energies (4 papers)IEEE Transactions on Electron Devices (4 papers)IEEE Transactions on Industrial Electronics (3 papers)
Partner nations: France Tunisia Spain

In The Last Decade

Hervé Morel

116 papers receiving 1.6k citations

Peers

Countries citing papers authored by Hervé Morel

Since Specialization

Citations

This map shows the geographic impact of Hervé Morel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hervé Morel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hervé Morel more than expected).

Fields of papers citing papers by Hervé Morel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hervé Morel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hervé Morel. The network helps show where Hervé Morel may publish in the future.

Co-authors

The 25 scholars most cited alongside Hervé Morel, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Hervé Morel Line = papers co-authored together Hervé Morel links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates Semiconductor Science and Technology ·어수영, Susanne Hieronymi, 谢洲丽, R. Amala, Dominique Planson, Christophe Raynaud, Camille Sonneville, Hervé Morel, Els Van De Walle, Pérez Gil, P. de Mierry, Éric Frayssinet, Y. Cordier, Hassan Maher, Raphaël Sommet, Jean‐Christophe Nallatamby, P. Vigneshwara Raja	2024	1
2	Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Pierre Brosselard, Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Camille Sonneville, Els Van De Walle, Mihai Lazar, Die Zhang, Sigo Scharnholz, Hervé Morel	2024	0
3	Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs Energies ·Joe Hoyle, D Chen, Hervé Morel, 博之高村, Chantana Polprasert, D. Bhowmik, Stéphane Azzopardi, Yan-ni Wu, Dennis C.P. van Kester	2024	1
4	Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions Microelectronics Reliability ·J.D. Mahony, Abdallah Deeb I. Al Zain, Hervé Morel, D Chen, Carol C. Covell, Ladybug, Francesco Iannuzzo, Yan-ni Wu	2023	2
5	Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics SPIRE - Sciences Po Institutional REpository ·Hervé Morel, O. A. Fatushina, Pascal Bevilacqua, Dominique Tournier, Dominique Planson	2023	1
6	Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs IEEE Transactions on Industrial Electronics ·P.-S. Ba, Cyril Buttay, Udoukpong Ea, Christophe Raynaud, Pascal Bevilacqua, J. Rebollo, Hervé Morel, X. Perpiñà	2023	7
7	Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs Electronics ·张兴梅, Schayana Bonin dos Santos, Daniela Salopek, Hervé Morel, Dominique Planson	2023	2
8	Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes Energies ·V. Lenti, Christophe Raynaud, Julien Buckley, Matthew Charles, Patricia Pimenta‐Barros, R. Gwoziecki, C. Gillot, Érika Janine Maia, Hervé Morel, Dominique Planson	2023	0
9	New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power Devices SPIRE - Sciences Po Institutional REpository ·Joe Hoyle, Bernardo Cougo, Fabio Coccetti, Stéphane Azzopardi, Hervé Morel	2023	0
10	Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes Journal of Materials Science Materials in Electronics ·P. Vigneshwara Raja, Christophe Raynaud, Лиридон Далипи, Hervé Morel, Dominique Planson	2023	3
11	Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs Materials science forum ·贾秀芬, Els Van De Walle, Dominique Planson, Hervé Morel, Camille Sonneville	2022	0
12	Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes Micro and Nanostructures ·P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Hervé Morel, Els Van De Walle, Pérez Gil, P. de Mierry, Éric Frayssinet, Hassan Maher, Y. Cordier, Dominique Planson	2022	1
13	Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons Materials science forum ·Лиридон Далипи, Pascal Bevilacqua, Hervé Morel, Dominique Planson, Els Van De Walle, Shukla V.J., Thomas Lagier, Michel Mermet-Guyennet	2020	0
14	Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes Materials science forum ·Лиридон Далипи, Dominique Planson, Pascal Bevilacqua, R. Rajmohan, Shukla V.J., Hervé Morel, Els Van De Walle	2019	3
15	Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications Materials science forum ·Hideki Tanizoe, Pilloni Raphaël, Jean-Louis Augé, Hervé Morel, Els Van De Walle, (unknown)	2016	9
16	Robustness in short-circuit Mode of SiC MOSFETs Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickaël Petit, Cyril Buttay, Hervé Morel	2015	17
17	Bi-objective sizing optimization of power converter using genetic algorithms COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering ·Maria Luisa Campos de Moraes, Kaiçar Ammous, Murat Sümer, Hervé Morel, Anis Ammous	2013	14
18	On the role of the wiring parasitic inductance for optimum efficient converter Prados Peña D, Karururu Kamaru, K. Veling, Hervé Morel	2012	3
19	State of the art of high temperature power electronics Materials Science and Engineering B ·Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, Charles Joubert, Mihai Lazar, Christian Martin, Hervé Morel, Dominique Tournier, Christophe Raynaud	2010	331
20	Reusing basic semiconductor region models in power device bond graph definition Eka Syafutri, Hervé Morel, J.P. Chante	2002	5

About Hervé Morel

Hervé Morel is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Control and Systems Engineering, Mechanical Engineering and Electronic, Optical and Magnetic Materials, having authored 126 papers that have together received 1.7k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (93 papers), Electromagnetic Compatibility and Noise Suppression (38 papers), Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers), Advanced DC-DC Converters (18 papers), Electrostatic Discharge in Electronics (15 papers), GaN-based semiconductor devices and materials (10 papers) and Induction Heating and Inverter Technology (9 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Ceramics and Composites (61 citations), Mechanical Engineering (354 citations), Condensed Matter Physics (89 citations) and Electronic, Optical and Magnetic Materials (105 citations). Hervé Morel has collaborated with scholars based in France, Tunisia and Spain. Frequent co-authors include Bruno Allard, Cyril Buttay, Christophe Raynaud, Dominique Planson, Dominique Bergogne, Anis Ammous, Dominique Tournier, Sami Ghédira, Pascal Bevilacqua and Christian Martin. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Power Electronics, Energies, IEEE Transactions on Electron Devices and IEEE Transactions on Industrial Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact