Patrick Fiorenza

4.0k total citations · 1 hit paper
167 papers, 3.1k citations indexed

About

Patrick Fiorenza is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Patrick Fiorenza has authored 167 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 150 papers in Electrical and Electronic Engineering, 46 papers in Atomic and Molecular Physics, and Optics and 45 papers in Materials Chemistry. Recurrent topics in Patrick Fiorenza's work include Semiconductor materials and devices (119 papers), Silicon Carbide Semiconductor Technologies (100 papers) and Semiconductor materials and interfaces (41 papers). Patrick Fiorenza is often cited by papers focused on Semiconductor materials and devices (119 papers), Silicon Carbide Semiconductor Technologies (100 papers) and Semiconductor materials and interfaces (41 papers). Patrick Fiorenza collaborates with scholars based in Italy, Czechia and Switzerland. Patrick Fiorenza's co-authors include Fabrizio Roccaforte, Filippo Giannazzo, Giuseppe Greco, Raffaella Lo Nigro, Ferdinando Iucolano, Mario Saggio, V. Raineri, Marilena Vivona, Alessia Frazzetto and Alfonso Patti and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Patrick Fiorenza

159 papers receiving 3.0k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

2017 426 citations Fabrizio Roccaforte, Patrick Fiorenza et al. profile →

Peers

Countries citing papers authored by Patrick Fiorenza

Since Specialization

Citations

This map shows the geographic impact of Patrick Fiorenza's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Patrick Fiorenza with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Patrick Fiorenza more than expected).

Fields of papers citing papers by Patrick Fiorenza

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Patrick Fiorenza. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Patrick Fiorenza. The network helps show where Patrick Fiorenza may publish in the future.

Co-authorship network of co-authors of Patrick Fiorenza

This figure shows the co-authorship network connecting the top 25 collaborators of Patrick Fiorenza. A scholar is included among the top collaborators of Patrick Fiorenza based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Patrick Fiorenza. Patrick Fiorenza is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS ₂ Transistors 2025 ·Small Science ·Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Marilena Vivona, Salvatore Di Franco, Fabrizio Roccaforte, (unknown), Matteo Bosi, G. Attolini, Igor Píš, Federica Bondino, M. Pedio, Antonino Madonia, M. Cannas, S. Agnello, L. Seravalli, Filippo Giannazzo	0
2	Thermal annealing effects on the electrical and structural properties of Mo Schottky contacts to n-type 4H-SiC 2025 ·Materials Science in Semiconductor Processing ·Marilena Vivona, (unknown), Lutz Kirste, Antonio Massimiliano Mio, Giuseppe Nicotra, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte	0
3	Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations 2025 ·Materials Science in Semiconductor Processing ·Patrick Fiorenza, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Salvatore Ethan Panasci, Marilena Vivona, Filippo Giannazzo, (unknown)	0
4	Nucleation studies of high-κ aluminum oxide and hafnium oxide thin films on silicon carbide by plasma-enhanced atomic layer deposition 2025 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown), Emanuela Schilirò, Patrick Fiorenza, (unknown), (unknown), Fabrizio Roccaforte, Raffaella Lo Nigro	0
5	Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 2024 ·Applied Surface Science ·(unknown), Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, (unknown), S. Mirabella, Ferdinando Iucolano, Fabrizio Roccaforte	7
6	Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Patrick Fiorenza, (unknown), (unknown), (unknown), (unknown), A. Guarnera, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte	1
7	Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 2024 ·IEEE Electron Device Letters ·Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Marilena Vivona, (unknown), F. Iucolano, Fabrizio Roccaforte	3
8	Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 2024 ·Applied Physics Letters ·Fabrizio Roccaforte, Marilena Vivona, Salvatore Ethan Panasci, Giuseppe Greco, Patrick Fiorenza, Attila Sulyok, Antal A. Koós, B. Pécz, Filippo Giannazzo	4
9	Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), (unknown), Massimo Camarda, Patrick Fiorenza, Antonio Massimiliano Mio, Viviana Scuderi, Philippe Godignon, (unknown), L. Calcagno, Francesco La Via	0
10	Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps 2023 ·Materials Science in Semiconductor Processing ·Patrick Fiorenza, (unknown), (unknown), (unknown), (unknown), Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte	3
11	Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 2023 ·Applied Physics Letters ·Marilena Vivona, Patrick Fiorenza, Viviana Scuderi, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte	7
12	Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 2023 ·Nanomaterials ·M. Španková, Š. Chromík, Edmund Dobročka, (unknown), (unknown), M. Gregor, B. Pécz, Antal A. Koós, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Y. Cordier, Éric Frayssinet, Filippo Giannazzo	6
13	Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 2023 ·Materials ·Emanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, (unknown), Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte	4
14	Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 2022 ·Journal of Applied Physics ·Patrick Fiorenza, Luca Maiolo, G. Fortunato, Marcin Zieliński, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte	4
15	Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology 2021 ·Materials ·Fan Li, Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Francesco La Via, Amador Pérez‐Tomás, Jonathan Evans, Craig A. Fisher, (unknown), Philip Mawby, Michael R. Jennings	29
16	Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 2021 ·Journal of Physics D Applied Physics ·Marilena Vivona, Giuseppe Greco, (unknown), Patrick Fiorenza, Filippo Giannazzo, Antonino La Magna, Fabrizio Roccaforte	14
17	Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy 2019 ·Nanotechnology ·Filippo Giannazzo, Ivan Shtepliuk, Ivan G. Ivanov, Tihomir Iakimov, A. Kakanakova‐Georgieva, Emanuela Schilirò, Patrick Fiorenza, Rositza Yakimova	24
18	Challenges for energy efficient wide band gap semiconductor power devices 2014 ·physica status solidi (a) ·Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio	113
19	A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments 2013 ·Beilstein Journal of Nanotechnology ·Patrick Fiorenza, Filippo Giannazzo, (unknown), Alessia Frazzetto, Simona Lorenti, (unknown), Fabrizio Roccaforte	14
20	Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures 2013 ·Nanotechnology ·Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Alessandra Alberti, Fabrizio Roccaforte	20

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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