Frédéric Morancho

524 total citations
45 papers, 379 citations indexed

About

Frédéric Morancho is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Frédéric Morancho has authored 45 papers receiving a total of 379 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 15 papers in Condensed Matter Physics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Frédéric Morancho's work include Semiconductor materials and devices (31 papers), Silicon Carbide Semiconductor Technologies (30 papers) and Advancements in Semiconductor Devices and Circuit Design (19 papers). Frédéric Morancho is often cited by papers focused on Semiconductor materials and devices (31 papers), Silicon Carbide Semiconductor Technologies (30 papers) and Advancements in Semiconductor Devices and Circuit Design (19 papers). Frédéric Morancho collaborates with scholars based in France, Spain and Switzerland. Frédéric Morancho's co-authors include Karine Isoird, H. Mahfoz-Kotb, Josiane Tasselli, P. Austin, T. Do Conto, Nicolas Mauran, Philip Mawby, Y. Cordier, James A. Covington and Camille Sonneville and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Energies.

In The Last Decade

Frédéric Morancho

41 papers receiving 356 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Frédéric Morancho France 11 351 107 35 33 32 45 379
Amirhossein Aminbeidokhti Iran 13 392 1.1× 104 1.0× 37 1.1× 42 1.3× 60 1.9× 21 419
Olivier Latry France 10 243 0.7× 102 1.0× 34 1.0× 54 1.6× 22 0.7× 53 282
Xiaoli Tian China 8 251 0.7× 66 0.6× 30 0.9× 42 1.3× 50 1.6× 37 280
Stefan Moench Germany 12 292 0.8× 266 2.5× 40 1.1× 35 1.1× 65 2.0× 38 347
F. van Rijs Netherlands 12 448 1.3× 99 0.9× 18 0.5× 36 1.1× 26 0.8× 36 468
S. Cristoloveanu France 9 295 0.8× 56 0.5× 27 0.8× 14 0.4× 21 0.7× 14 312
Liu Xinyu China 8 146 0.4× 88 0.8× 20 0.6× 54 1.6× 36 1.1× 50 183
F. Bauwens Belgium 14 714 2.0× 268 2.5× 16 0.5× 45 1.4× 55 1.7× 48 734
R.K. Freitag United States 11 283 0.8× 68 0.6× 50 1.4× 22 0.7× 34 1.1× 21 348
Arash Salemi Sweden 13 428 1.2× 31 0.3× 28 0.8× 50 1.5× 59 1.8× 43 435

Countries citing papers authored by Frédéric Morancho

Since Specialization
Citations

This map shows the geographic impact of Frédéric Morancho's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Frédéric Morancho with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Frédéric Morancho more than expected).

Fields of papers citing papers by Frédéric Morancho

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Frédéric Morancho. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Frédéric Morancho. The network helps show where Frédéric Morancho may publish in the future.

Co-authorship network of co-authors of Frédéric Morancho

This figure shows the co-authorship network connecting the top 25 collaborators of Frédéric Morancho. A scholar is included among the top collaborators of Frédéric Morancho based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Frédéric Morancho. Frédéric Morancho is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Soltani, A., Josiane Tasselli, Karine Isoird, et al.. (2024). A Novel Isolation Approach for GaN-Based Power Integrated Devices. Micromachines. 15(10). 1223–1223.
3.
Sonneville, Camille, P. de Mierry, Éric Frayssinet, et al.. (2023). Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode. Crystals. 13(5). 713–713. 3 indexed citations
4.
Raja, P. Vigneshwara, Christophe Raynaud, Camille Sonneville, et al.. (2022). Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectronics Journal. 128. 105575–105575. 9 indexed citations
5.
Tasselli, Josiane, et al.. (2022). Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs. HAL (Le Centre pour la Communication Scientifique Directe). 105–109.
6.
Morancho, Frédéric, et al.. (2014). Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors. IET Circuits Devices & Systems. 8(3). 197–204. 11 indexed citations
7.
Torres, A., et al.. (2013). AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD. Microelectronic Engineering. 109. 378–380. 4 indexed citations
8.
Torres, A., et al.. (2013). AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD and BCl3 Gate Recess Etching. ECS Transactions. 58(4). 269–277. 3 indexed citations
9.
Morancho, Frédéric, et al.. (2011). Design and optimization of high voltage LDMOS transistors on 0.18μm SOI CMOS technology. Solid-State Electronics. 61(1). 111–115. 9 indexed citations
10.
Morancho, Frédéric, et al.. (2010). Analysis and optimization of LUDMOS transistors on a 0.18um SOI CMOS technology. 1. 3–8. 1 indexed citations
11.
Morancho, Frédéric, et al.. (2010). Analysis of technological concerns on electrical characteristics of SOI power LUDMOS transistors. 173–176. 2 indexed citations
12.
Morancho, Frédéric, et al.. (2010). Breakdown voltage and on-resistance considerations in the floating islands metal-oxide semiconductor field-effect transistor. International Journal of Electronics. 97(3). 241–247. 4 indexed citations
13.
Morancho, Frédéric, et al.. (2009). Analysis and optimization of LUDMOS transistors on a 0.18µm SOI CMOS technology. International Conference Mixed Design of Integrated Circuits and Systems. 549–554. 2 indexed citations
14.
Morancho, Frédéric, et al.. (2009). LUDMOS transistors optimization on a 0.18um SOI CMOS technology. European Conference on Power Electronics and Applications. 1–10. 2 indexed citations
15.
16.
Morancho, Frédéric, et al.. (2009). Optimisation of low voltage Field Plate LDMOS transistors. 475–478. 5 indexed citations
17.
Morancho, Frédéric, et al.. (2006). Experimental validation of the ‘FLoating Islands’ concept: 95 V breakdown voltage vertical FLIDiode. IEE Proceedings - Circuits Devices and Systems. 153(1). 53–53. 4 indexed citations
18.
Morancho, Frédéric, et al.. (2004). Vertical N-channel FLIMOSFETs for future 12 V/42 V dual batteries automotive applications. 308–311. 9 indexed citations
19.
Tricot, André, et al.. (2002). Usages pédagogiques des exerciseurs multimédias : Quels apprentissages sont-ils possibles avec des exerciseurs multimédia en classe ? Réflexions théoriques et compte rendu d'une expérience. HAL (Le Centre pour la Communication Scientifique Directe).
20.
Morancho, Frédéric, et al.. (2001). A new generation of power lateral and vertical floating islands MOS structures. Microelectronics Journal. 32(5-6). 509–516. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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