M. Wu

618 citations

33 papers · 479 · h-index 15

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 30
- GaN-based semiconductor devices and materials 30
Electronic, Optical and Magnetic Materials 14
- Ga2O3 and related materials 14

Co-authors: H. Morkoç̌ (24 shared papers)Jacob H. Leach (19 shared papers)X. Ni (16 shared papers)Ü. Özgür (12 shared papers)A. Matulionis (13 shared papers)J. Liberis (10 shared papers)H. Morkoç (6 shared papers)X. Li (8 shared papers)
Journals: Applied Physics Letters (12 papers)Semiconductor Science and Technology (3 papers)Journal of Applied Physics (3 papers)physica status solidi (a) (3 papers)Journal of Crystal Growth (1 paper)
Partner nations: United States Lithuania China

In The Last Decade

M. Wu

32 papers receiving 456 citations

Peers

Countries citing papers authored by M. Wu

Since Specialization

Citations

This map shows the geographic impact of M. Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Wu more than expected).

Fields of papers citing papers by M. Wu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Wu. The network helps show where M. Wu may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Wu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Wu Line = papers co-authored together M. Wu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 33 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes Applied Physics Letters ·Xianbo LI, X. Ni, Joon Chok Lee, M. Wu, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, K. R. Evans	2009	49
2	Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels Semiconductor Science and Technology ·A. Matulionis, J. Liberis, E. Šermukšnis, Jiulong Xie, Jacob H. Leach, M. Wu, H. Morkoç̌	2008	33
3	Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition Applied Physics Letters ·X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, H. Morkoç	2009	32
4	Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers Applied Physics Letters ·Jun Xie, Jacob H. Leach, X. Ni, M. Wu, Rintaro Shimada, Ü. Özgür, H. Morkoç	2007	32
5	Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons Applied Physics Letters ·Jacob H. Leach, Congyong Zhu, M. Wu, X. Ni, X. Li, Jinqiao Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, Çağlıyan Kurdak	2009	31
6	Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields Journal of Applied Physics ·L. Ardaravičius, M. Ramonas, J. Liberis, O. Kiprijanovič, A. Matulionis, Jiulong Xie, M. Wu, Jacob H. Leach, H. Morkoç̌	2009	30
7	Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates Applied Physics Letters ·Jacob H. Leach, Congyong Zhu, M. Wu, X. Ni, X. Li, Jinqiao Xie, Ümit Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, Edward A. Preble, K. R. Evans	2010	21
8	Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN Applied Physics Letters ·X. Ni, J. Lee, M. Wu, X. Li, Rintaro Shimada, Ümit Özgür, A. A. Baski, H. Morkoç, T. Paskova, G. Mulholland, K. R. Evans	2009	19
9	Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels Applied Physics Letters ·A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, E. Šermukšnis, Jacob H. Leach, M. Wu, X. Ni, X. Li, H. Morkoç̌	2009	19
10	InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide physica status solidi (a) ·X. Li, H. Y. Liu, S. Liu, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ümit Özgür, H. Morkoç̌	2010	18
11	Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures physica status solidi (a) ·Jacob H. Leach, M. Wu, X. Ni, X. Li, Ü. Özgür, H. Morkoç̌	2009	18
12	Epitaxial lateral overgrowth of non-polar GaN(1100) on Si(112) patterned substrates by MOCVD Journal of Crystal Growth ·N. Izyumskaya, S.J. Liu, V. Avrutin, X. Ni, M. Wu, Ümit Özgür, Sebastian Metzner, F. Bertram, J. Christen, Lin Zhou, David J. Smith, H. Morkoç̌	2010	16
13	Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects Applied Physics Letters ·Cemil Kayis, Romualdo A. Ferreyra, M. Wu, X. Li, Ü. Özgür, A. Matulionis, H. Morkoç̌	2011	15
14	Bias dependent two-channel conduction in InAlN/AlN/GaN structures Journal of Applied Physics ·Jacob H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç̌, Lin Zhou, David A. Cullen, David J. Smith, H. Cheng, Çağlıyan Kurdak, J. R. Meyer, I. Vurgaftman	2010	15
15	Hot‐electron drift velocity and hot‐phonon decay in AlInN/AlN/GaN physica status solidi (RRL) - Rapid Research Letters ·L. Ardaravicˇius, J. Liberis, O. Kiprijanovicˇ, A. Matulionis, M. Wu, H. Morkoç̌	2010	14
16	Composition dependence of interface control and optimization on the performance of an HfTiON gate dielectric metal-oxide-semiconductor capacitor Semiconductor Science and Technology ·Guangzhi He, Zhaoqi Sun, Y Q, M. Wu, Y.M. Liu, Shengyao Shi, G Li, X S Chen, L D Zhang, Ze Fang	2011	14
17	The LIKE SEX FOUR 1–malate dehydrogenase complex functions as a scaffold to recruit β-amylase to promote starch degradation The Plant Cell ·Jian Liu, Xuecui Wang, Zeyuan Guan, M. Wu, Xinyue Wang, R. R. Fan, Fei Zhang, Junjun Yan, Yanjun Liu, Delin Zhang, Ping Yin, Junjie Yan	2023	13
18	Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects Applied Physics Letters ·Congyong Zhu, M. Wu, Cemil Kayis, Fan Zhang, X. Li, Romualdo A. Ferreyra, A. Matulionis, V. Avrutin, Ümit Özgür, H. Morkoç̌	2012	12
19	Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors physica status solidi (a) ·A. Matulionis, J. Liberis, I. Matulionienė, E. Šermukšnis, Jacob H. Leach, M. Wu, H. Morkoç̌	2010	12
20	Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure Applied Physics Letters ·H. Cheng, Çağlıyan Kurdak, Jacob H. Leach, M. Wu, H. Morkoç̌	2010	10

About M. Wu

M. Wu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials, having authored 33 papers that have together received 479 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (30 papers), Ga2O3 and related materials (14 papers), Semiconductor materials and devices (11 papers), Semiconductor Quantum Structures and Devices (7 papers), Metal and Thin Film Mechanics (7 papers), ZnO doping and properties (7 papers), Acoustic Wave Resonator Technologies (3 papers) and Quantum and electron transport phenomena (2 papers). The work is most often cited by research in Condensed Matter Physics (414 citations), Electronic, Optical and Magnetic Materials (191 citations), Atomic and Molecular Physics, and Optics (167 citations), Electrical and Electronic Engineering (210 citations) and Materials Chemistry (164 citations). M. Wu has collaborated with scholars based in United States, Lithuania and China. Frequent co-authors include H. Morkoç̌, Jacob H. Leach, X. Ni, Ü. Özgür, A. Matulionis, J. Liberis, H. Morkoç, X. Li, K. R. Evans and Ümit Özgür. Their work appears in journals such as Applied Physics Letters, Semiconductor Science and Technology, Journal of Applied Physics, physica status solidi (a) and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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