Sung‐Bum Bae

423 total citations
37 papers, 332 citations indexed

About

Sung‐Bum Bae is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Sung‐Bum Bae has authored 37 papers receiving a total of 332 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Condensed Matter Physics, 20 papers in Electrical and Electronic Engineering and 18 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Sung‐Bum Bae's work include GaN-based semiconductor devices and materials (35 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (13 papers). Sung‐Bum Bae is often cited by papers focused on GaN-based semiconductor devices and materials (35 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (13 papers). Sung‐Bum Bae collaborates with scholars based in South Korea, United States and France. Sung‐Bum Bae's co-authors include Jung‐Hee Lee, Hwan-Hee Jeong, Hyun‐Chul Choi, Jong‐Lam Lee, Chang Min Jeon, Ho Won Jang, Jong Kyu Kim, Ki-Hong Kim, Jong‐Won Lim and Jae‐Hoon Lee and has published in prestigious journals such as Applied Physics Letters, Science Advances and IEEE Transactions on Electron Devices.

In The Last Decade

Sung‐Bum Bae

33 papers receiving 318 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Sung‐Bum Bae South Korea 11 293 153 149 127 83 37 332
Chu‐Li Chao Taiwan 10 298 1.0× 140 0.9× 106 0.7× 201 1.6× 60 0.7× 19 330
Dolar Khachariya United States 12 362 1.2× 209 1.4× 184 1.2× 108 0.9× 99 1.2× 35 399
X. Li United States 12 315 1.1× 116 0.8× 172 1.2× 127 1.0× 46 0.6× 34 347
P. Misra Germany 11 248 0.8× 138 0.9× 97 0.7× 189 1.5× 77 0.9× 26 336
Hai Lu United States 8 359 1.2× 252 1.6× 164 1.1× 193 1.5× 92 1.1× 16 444
Pavel Kirilenko Saudi Arabia 9 336 1.1× 147 1.0× 144 1.0× 203 1.6× 71 0.9× 17 370
F. Ranalli United Kingdom 11 261 0.9× 116 0.8× 100 0.7× 120 0.9× 77 0.9× 20 309
Yifan Yao United States 12 268 0.9× 135 0.9× 194 1.3× 151 1.2× 88 1.1× 26 367
Sugita Kenichi Japan 7 297 1.0× 128 0.8× 130 0.9× 118 0.9× 121 1.5× 10 353
O. V. Kovalenkov United States 11 271 0.9× 114 0.7× 153 1.0× 128 1.0× 111 1.3× 33 367

Countries citing papers authored by Sung‐Bum Bae

Since Specialization
Citations

This map shows the geographic impact of Sung‐Bum Bae's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sung‐Bum Bae with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sung‐Bum Bae more than expected).

Fields of papers citing papers by Sung‐Bum Bae

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sung‐Bum Bae. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sung‐Bum Bae. The network helps show where Sung‐Bum Bae may publish in the future.

Co-authorship network of co-authors of Sung‐Bum Bae

This figure shows the co-authorship network connecting the top 25 collaborators of Sung‐Bum Bae. A scholar is included among the top collaborators of Sung‐Bum Bae based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sung‐Bum Bae. Sung‐Bum Bae is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Bae, Sung‐Bum, et al.. (2025). Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing. Applied Physics Letters. 126(12). 1 indexed citations
3.
Shin, S. H., et al.. (2024). Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region. Solid-State Electronics. 220. 108987–108987. 1 indexed citations
4.
Zhang, Yuxuan, Won Seok Han, Sung‐Bum Bae, et al.. (2022). Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique. Science Advances. 8(3). eabl6406–eabl6406. 11 indexed citations
5.
Chang, Sung‐Jae, Sang-Youl Lee, Hwan-Hee Jeong, et al.. (2021). Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors. Crystals. 11(11). 1414–1414. 5 indexed citations
6.
Bae, Sung‐Bum, et al.. (2021). Structural characteristics and defect states of intrinsic GaN epi-layers in a high power device structure. Journal of the Korean Physical Society. 79(1). 57–63. 4 indexed citations
7.
Chang, Sung‐Jae, Jeong-Jin Kim, Sung‐Bum Bae, et al.. (2019). Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs. ECS Journal of Solid State Science and Technology. 8(12). Q245–Q248. 9 indexed citations
8.
Lee, Hyung‐Seok, et al.. (2019). Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond. Journal of Nanoscience and Nanotechnology. 19(10). 6119–6122. 1 indexed citations
9.
Lee, Jung‐Hee, et al.. (2016). Comparative study on AlGaN/GaN HFETs and MIS-HFETs. Open Access System for Information Sharing (Pohang University of Science and Technology).
10.
Lee, Soo Hyun, et al.. (2013). Temperature and injection current dependent optical and thermal characteristics of InGaN-based green large-area light-emitting diodes. physica status solidi (a). 210(11). 2479–2484. 4 indexed citations
11.
Bae, Sung‐Bum, et al.. (2013). Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures. Microelectronic Engineering. 109. 10–12. 5 indexed citations
12.
Kim, Dong‐Seok, Ki‐Sik Im, Hee‐Sung Kang, et al.. (2012). Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier. Japanese Journal of Applied Physics. 51(3R). 34101–34101. 18 indexed citations
13.
Lee, Ju Hee, et al.. (2009). Optical Properties and Electronic Subband Structures inIn$_{x}$Ga$_{1-x}$N/GaN Single Quantum Wells. Journal of the Korean Physical Society. 55(1). 275–279. 1 indexed citations
14.
Lee, Dong Uk, et al.. (2008). Study on Defect States in GaN Epilayer Induced by Irradiation of High-Energy Electrons. Japanese Journal of Applied Physics. 47(8S2). 6867–6867. 5 indexed citations
15.
Bae, Sung‐Bum, et al.. (2002). Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions. ETRI Journal. 24(4). 270–279. 30 indexed citations
16.
Lee, Jae‐Hoon, Jong‐Hyun Kim, Sung‐Bum Bae, et al.. (2002). Improvement of Electrical Properties of MOCVD Grown Al x Ga 1— x N/GaN Heterostructure with Isoelectronic Al‐Doped Channel. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 240–243. 7 indexed citations
17.
Jeon, Chang Min, Ho Won Jang, Kyoung Jin Choi, et al.. (2002). Room-Temperature Ohmic Contact on AlGaN/GaN Heterostructure with Surface Treatment Using N[sub 2] Inductively Coupled Plasma. Electrochemical and Solid-State Letters. 5(7). G45–G45. 1 indexed citations
18.
Jang, Ho Won, Chang Min Jeon, Ki-Hong Kim, et al.. (2002). Mechanism of two-dimensional electron gas formation in AlxGa1−xN/GaN heterostructures. Applied Physics Letters. 81(7). 1249–1251. 43 indexed citations
19.
20.
Jeong, Hwan-Hee, et al.. (2001). Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss. IEEE Transactions on Electron Devices. 48(3). 524–529. 63 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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