P. Drechsel

484 total citations
14 papers, 387 citations indexed

About

P. Drechsel is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P. Drechsel has authored 14 papers receiving a total of 387 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Condensed Matter Physics, 5 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in P. Drechsel's work include GaN-based semiconductor devices and materials (11 papers), Semiconductor Quantum Structures and Devices (5 papers) and Ga2O3 and related materials (3 papers). P. Drechsel is often cited by papers focused on GaN-based semiconductor devices and materials (11 papers), Semiconductor Quantum Structures and Devices (5 papers) and Ga2O3 and related materials (3 papers). P. Drechsel collaborates with scholars based in Germany, Italy and Switzerland. P. Drechsel's co-authors include Bastian Galler, Michael Binder, P. Stauß, Dario Schiavon, F. Scholz, Matthias Peter, T. Markurt, M. Albrecht, Tobias Schulz and B. Hahn and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

P. Drechsel

13 papers receiving 363 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Drechsel Germany 9 366 176 156 140 137 14 387
Y. Dikme Germany 12 383 1.0× 142 0.8× 200 1.3× 146 1.0× 170 1.2× 44 431
David A. Browne United States 9 314 0.9× 125 0.7× 155 1.0× 112 0.8× 143 1.0× 12 347
Dario Schiavon Poland 10 326 0.9× 194 1.1× 163 1.0× 117 0.8× 109 0.8× 38 378
Hongbo Yu Türkiye 14 360 1.0× 113 0.6× 141 0.9× 195 1.4× 233 1.7× 29 423
Hiroya Kimura Japan 5 429 1.2× 135 0.8× 164 1.1× 209 1.5× 232 1.7× 6 459
Sugita Kenichi Japan 7 297 0.8× 153 0.9× 130 0.8× 118 0.8× 128 0.9× 10 353
B. Sadovyi Poland 12 251 0.7× 84 0.5× 132 0.8× 145 1.0× 141 1.0× 33 325
Shuichi Kubo Japan 5 387 1.1× 101 0.6× 156 1.0× 208 1.5× 236 1.7× 9 422
A. M. Mizerov Russia 12 392 1.1× 95 0.5× 135 0.9× 187 1.3× 240 1.8× 68 444

Countries citing papers authored by P. Drechsel

Since Specialization
Citations

This map shows the geographic impact of P. Drechsel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Drechsel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Drechsel more than expected).

Fields of papers citing papers by P. Drechsel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Drechsel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Drechsel. The network helps show where P. Drechsel may publish in the future.

Co-authorship network of co-authors of P. Drechsel

This figure shows the co-authorship network connecting the top 25 collaborators of P. Drechsel. A scholar is included among the top collaborators of P. Drechsel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Drechsel. P. Drechsel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Drechsel, P., Kay‐Obbe Voss, Michael Guinchard, et al.. (2021). Dynamic Response of Graphitic Targets with Tantalum Cores Impacted by Pulsed 440‐GeV Proton Beams. Shock and Vibration. 2021(1). 2 indexed citations
2.
3.
Markurt, T., Tobias Schulz, P. Drechsel, P. Stauß, & M. Albrecht. (2018). A predictive model for plastic relaxation in (0001)-oriented wurtzite thin films and heterostructures. Journal of Applied Physics. 124(3). 9 indexed citations
4.
Schulz, Tobias, P. Drechsel, Felix Nippert, et al.. (2014). Recombination dynamics in InxGa1−xN quantum wells—Contribution of excited subband recombination to carrier leakage. Applied Physics Letters. 105(18). 181109–181109. 11 indexed citations
5.
Meneghini, Matteo, Bastian Galler, R. Zeisel, et al.. (2014). Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes. Applied Physics Letters. 104(11). 51 indexed citations
6.
Markurt, T., L. Lymperakis, Jörg Neugebauer, et al.. (2013). Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters. 110(3). 36103–36103. 59 indexed citations
7.
Drechsel, P., P. Stauß, Werner Bergbauer, et al.. (2012). Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates. physica status solidi (a). 209(3). 427–430. 32 indexed citations
8.
Schiavon, Dario, Michael Binder, Matthias Peter, et al.. (2012). Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes. physica status solidi (b). 250(2). 283–290. 99 indexed citations
9.
Fritze, S., P. Drechsel, P. Stauß, et al.. (2012). Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy. Journal of Applied Physics. 111(12). 31 indexed citations
10.
Galler, Bastian, P. Drechsel, R. Monnard, et al.. (2012). Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates. Applied Physics Letters. 101(13). 69 indexed citations
11.
Stauß, P., Martin Mandl, A. Laubsch, et al.. (2011). Monolitically grown dual wavelength InGaN LEDs for improved CRI. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2396–2398. 3 indexed citations
12.
Bergbauer, Werner, P. Drechsel, M. Sabathil, et al.. (2011). Towards nanorod LEDs: Numerical predictions and controlled growth. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2305–2307. 8 indexed citations
13.
Drechsel, P. & H. Riechert. (2010). Strain controlled growth of crack-free GaN with low defect density on silicon (1 1 1) substrate. Journal of Crystal Growth. 315(1). 211–215. 12 indexed citations
14.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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