W. Vandervorst

401 citations

21 papers · 331 indexed · h-index 10

Co-authors: Trudo Clarysse Peter Wolf A. Vantomme Bert Brijs H. Bender K. Maex E. J. H. Collart W. F. A. Besling
Topics: Ion-surface interactions and analysis (14 papers)Integrated Circuits and Semiconductor Failure Analysis (12 papers)Semiconductor materials and devices (10 papers)
Cited by: Electrical and Electronic Engineering Computational Mechanics Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: Belgium United Kingdom Finland

In The Last Decade

W. Vandervorst

21 papers receiving 314 citations

Peers

Countries citing papers authored by W. Vandervorst

Since Specialization

Citations

This map shows the geographic impact of W. Vandervorst's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Vandervorst with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Vandervorst more than expected).

Fields of papers citing papers by W. Vandervorst

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Vandervorst. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Vandervorst. The network helps show where W. Vandervorst may publish in the future.

Co-authorship network of co-authors of W. Vandervorst

This figure shows the co-authorship network connecting the top 25 collaborators of W. Vandervorst. A scholar is included among the top collaborators of W. Vandervorst based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Vandervorst. W. Vandervorst is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Fundamental aspects of Ar _n ⁺ SIMS profiling of common organic semiconductors 2014 ·Surface and Interface Analysis ·Claudia Fleischmann,Thierry Conard,Rasmus Havelund,Alexis Franquet,Claude Poleunis,Eszter Vörösházi,Arnaud Delcorte,W. Vandervorst	12
2	RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon 2013 ·AIP conference proceedings ·Johan Meersschaut,(unknown),(unknown),T. Witters,Qiang Zhao,A. Vantomme,W. Vandervorst	8
3	Time-of-flight telescope for heavy-ion RBS 2007 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·(unknown),Bert Brijs,Timo Sajavaara,Kai Arstila,A. Vantomme,W. Vandervorst	3
4	Suppression of phosphorus diffusion by carbon co-implantation 2006 ·Applied Physics Letters ·(unknown),Ray Duffy,(unknown),W. Vandervorst,Susan B. Felch,E. J. H. Collart,N. E. B. Cowern	45
5	Impurity Incorporation during Copper Electrodeposition in the Curvature-Enhanced Accelerator Coverage Regime 2005 ·Electrochemical and Solid-State Letters ·(unknown),(unknown),Thierry Conard,Wen‐Wei Wu,M. Van Hove,W. Vandervorst,Karen Maex	21
6	The influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacks 2004 ·Applied Surface Science ·Cedric Huyghebaert,T. Conard,W. Vandervorst	3
7	On the reliability of SIMS depth profiles through HfO2-stacks 2004 ·Applied Surface Science ·W. Vandervorst,J. Bennett,Cedric Huyghebaert,Thierry Conard,(unknown),H. De Witte	10
8	(A)thermal migration of Ge during junction formation in s-Si layers grown on thin SiGebuffer layers 2004 ·MRS Proceedings ·W. Vandervorst,(unknown),(unknown),Bert Brijs,Romain Delhougne,(unknown),Roger Loo	4
9	Depth profiling of ZrO2/SiO2/Si stacks—a TOF-SIMS and computer simulation study 2004 ·Applied Surface Science ·(unknown),T. Conard,W. Möller,W. Vandervorst,R. Gijbels	4
10	Ionization probability changes of the Si+ ions during the transient for 3 keV O2+ bombardment of Si 2002 ·Applied Surface Science ·Cedric Huyghebaert,Tom Janssens,Bert Brijs,W. Vandervorst	1
11	Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence in SiGe 2002 ·Applied Surface Science ·Cedric Huyghebaert,Bert Brijs,Tom Janssens,W. Vandervorst	1
12	Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2 2002 ·Journal of Applied Physics ·A. Satta,Jörg Schuhmacher,Caroline M. Whelan,W. Vandervorst,(unknown),(unknown),K. Maex,A. Vantomme,(unknown),H.H. Brongersma,W. F. A. Besling	82
13	Profile Changes and Self-sputtering during Low Energy Ion Implantation. 2002 ·MRS Proceedings ·W. Vandervorst,(unknown),Bert Brijs,Richard Lindsay,E. J. H. Collart,David A. Kirkwood,(unknown),G. Terwagne	3
14	Analysis of Selectively Grown Epitaxial Si[sub 1−x]Ge[sub x] by Spectroscopic Ellipsometry and Comparison with Other Established Techniques 2000 ·Journal of The Electrochemical Society ·Roger Loo,(unknown),(unknown),(unknown),Bert Brijs,(unknown),W. Vandervorst	11
15	Nanopotentiometry: Local potential measurements in complementary metal–oxide–semiconductor transistors using atomic force microscopy 1998 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Thomas Trenkler,Peter Wolf,W. Vandervorst,L. Hellemans	24
16	Recent insights into the physical modeling of the spreading resistance point contact 1996 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Trudo Clarysse,Peter Wolf,H. Bender,W. Vandervorst	41
17	Modifications in the Si valence band after ion-beam-induced oxidation 1994 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·J. L. Alay,W. Vandervorst	5
18	A new spreading resistance correction scheme combining variable radius and barrier resistance with epilayer matching 1992 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Trudo Clarysse,W. Vandervorst	13
19	Heavily phosphorus-doped epitaxial Si deposited by low-temperature plasma-enhanced chemical vapor deposition 1991 ·Applied Physics Letters ·Kris Baert,Jan Vanhellemont,W. Vandervorst,J. Nijs,Makoto Konagai	2
20	Formation of thin films of monocrystalline CoSi2 on (100) Si 1991 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·(unknown),(unknown),Jan Vanhellemont,W. Vandervorst	2

About W. Vandervorst

W. Vandervorst is a scholar working on Computational Mechanics, Radiation and Electrical and Electronic Engineering, having authored 21 papers that have together received 331 indexed citations. Recurring topics across this work include Ion-surface interactions and analysis (14 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers) and Semiconductor materials and devices (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (282 citations), Computational Mechanics (65 citations) and Atomic and Molecular Physics, and Optics (92 citations). W. Vandervorst has collaborated with scholars based in Belgium, United Kingdom and Finland. Frequent co-authors include Trudo Clarysse, Peter Wolf, A. Vantomme, Bert Brijs, H. Bender, K. Maex, E. J. H. Collart, W. F. A. Besling, Timo Sajavaara and Kai Arstila. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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