L. C. Hsia

444 total citations
39 papers, 328 citations indexed

About

L. C. Hsia is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, L. C. Hsia has authored 39 papers receiving a total of 328 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 12 papers in Electronic, Optical and Magnetic Materials and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in L. C. Hsia's work include Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). L. C. Hsia is often cited by papers focused on Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). L. C. Hsia collaborates with scholars based in United States, Singapore and Taiwan. L. C. Hsia's co-authors include Wenquan Lu, P. E. Wigen, Subodh G. Mhaisalkar, Kaiyang Zeng, Christian Wong, Dong Kyun Sohn, Lydia Helena Wong, L. Chan, P. De Gasperis and S.L. Toh and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

L. C. Hsia

36 papers receiving 304 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. C. Hsia United States	11	270	88	85	61	56	39	328
В. Н. Матвеев Russia	11	132 0.5×	106 1.2×	96 1.1×	45 0.7×	28 0.5×	44	317
Veli-Matti Airaksinen Finland	10	302 1.1×	149 1.7×	36 0.4×	74 1.2×	63 1.1×	23	381
A. Domenicucci United States	13	506 1.9×	148 1.7×	256 3.0×	64 1.0×	41 0.7×	37	571
E. Kunnen Belgium	12	371 1.4×	95 1.1×	87 1.0×	97 1.6×	47 0.8×	50	463
Andrew Erickson United States	7	283 1.0×	234 2.7×	79 0.9×	119 2.0×	52 0.9×	16	417
弘之松波	3	393 1.5×	97 1.1×	79 0.9×	24 0.4×	30 0.5×	5	450
R. C. Tu Taiwan	11	168 0.6×	179 2.0×	142 1.7×	80 1.3×	65 1.2×	30	424
Rafal Ciechonski Sweden	10	228 0.8×	149 1.7×	186 2.2×	167 2.7×	34 0.6×	24	518
M. P. Shcheglov Russia	8	159 0.6×	77 0.9×	66 0.8×	60 1.0×	46 0.8×	64	294
Min Chu United States	5	318 1.2×	88 1.0×	41 0.5×	174 2.9×	14 0.3×	8	437

Countries citing papers authored by L. C. Hsia

Since Specialization

Citations

This map shows the geographic impact of L. C. Hsia's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. C. Hsia with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. C. Hsia more than expected).

Fields of papers citing papers by L. C. Hsia

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. C. Hsia. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. C. Hsia. The network helps show where L. C. Hsia may publish in the future.

Co-authorship network of co-authors of L. C. Hsia

This figure shows the co-authorship network connecting the top 25 collaborators of L. C. Hsia. A scholar is included among the top collaborators of L. C. Hsia based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. C. Hsia. L. C. Hsia is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Liu, Jinping, et al.. (2009). Loading Effect of Selective Epitaxial Growth of Silicon Germanium in Submicrometer-Scale Silicon (001) Windows. Electrochemical and Solid-State Letters. 12(3). H58–H58. 2 indexed citations

Bénistant, F., et al.. (2008). Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain. Applied Physics Letters. 93(22). 221912–221912. 28 indexed citations

Hsia, L. C., et al.. (2007). Implant damage and strain relaxation of embedded epitaxial silicon germanium layer on silicon. Applied Physics Letters. 90(26). 8 indexed citations

Lu, Wenquan, et al.. (2005). Comparative Study of Trimethyl Silane and Tetramethylcyclotetrasiloxane-Based Low-k Films. Journal of The Electrochemical Society. 152(4). G246–G246. 6 indexed citations

Mhaisalkar, Subodh G., Wenquan Lu, Suan Ee Ong, et al.. (2005). Adhesion study of tetra methyl cyclo tetra siloxanes (TMCTS) and tri methyl silane (3MS)-based low-k films. Microelectronic Engineering. 81(1). 35–43. 3 indexed citations

Liu, Jinping, Lydia Helena Wong, Dong Kyun Sohn, et al.. (2005). A Novel Thin Buffer Concept for Epitaxial Growth of Relaxed SiGe Layers with Low Threading Dislocation Density. Electrochemical and Solid-State Letters. 8(2). G60–G60. 12 indexed citations

Sritharan, Thirumany, Subodh G. Mhaisalkar, Wenquan Lu, et al.. (2005). Adhesion study of low-k/Si system using 4-point bending and nanoscratch test. Materials Science and Engineering B. 121(3). 193–198. 34 indexed citations

Lu, Wenquan, Subodh G. Mhaisalkar, J. Sudijono, et al.. (2004). Effects of CO2 and O2 on the property of tetra methyl tetra cyclo siloxanes based low-k film. Thin Solid Films. 472(1-2). 195–202. 8 indexed citations

Lu, Wenquan, Subodh G. Mhaisalkar, Suan Ee Ong, et al.. (2004). Effects of O2 and He on the properties of the trimethyl silane based low-k films. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(3). 1030–1036. 9 indexed citations

10.

Tsai, Chin-Hung, et al.. (2002). Valence-band tunneling enhanced hot carrier degradation in ultrathin oxide nMOSFETs. 139–142. 9 indexed citations

11.

Maldonado, Juan R., et al.. (1993). Measurement of the effective wavelength of x-ray lithography sources. Microelectronic Engineering. 21(1-4). 113–116. 1 indexed citations

12.

Hsia, L. C., et al.. (1992). Radiation damage effects on bipolar and MOS devices in X-Ray lithography. Journal of Electronic Materials. 21(7). 757–761. 5 indexed citations

13.

Hsia, L. C.. (1991). A Study of X‐Ray Damage Effects on Open‐Bottom Trench Isolation for Bipolar Devices. Journal of The Electrochemical Society. 138(1). 239–242. 4 indexed citations

14.

Hsia, L. C., et al.. (1991). X-ray radiation damage and a reliability study on bipolar devices. Applied Physics Letters. 58(23). 2687–2689.

15.

Silverman, J. P., et al.. (1989). Fully scaled 0.5 μm MOS circuits by synchrotron radiation X-ray lithography: Devices fabrication and overlay evaluation. Microelectronic Engineering. 9(1-4). 101–104. 3 indexed citations

16.

Hsia, L. C., et al.. (1986). CVD Growth and Properties of “Phoslon” Dielectric Films. Journal of The Electrochemical Society. 133(2). 366–372. 3 indexed citations

17.

Hsia, L. C.. (1984). Applications of Optical Properties of Sputtered‐Chromium Thin Films in Photomask Making. Journal of The Electrochemical Society. 131(9). 2133–2137. 2 indexed citations

18.

Hsia, L. C., et al.. (1981). Effect of temperature on magnetostatic mode spectra of reduced Ca-doped YIG thin films. IEEE Transactions on Magnetics. 17(6). 2961–2963. 3 indexed citations

19.

Hsia, L. C., et al.. (1981). Enhancement of uniaxial anisotropy constant by introducing oxygen vacancies in Ca-doped YIG. Journal of Applied Physics. 52(3). 2261–2263. 11 indexed citations

20.

Hsia, L. C., et al.. (1979). Eddy current damping in Ca-doped YIG films. Journal of Applied Physics. 50(B11). 7835–7837. 12 indexed citations

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