J. L. Alay

719 total citations
32 papers, 607 citations indexed

About

J. L. Alay is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films and Computational Mechanics. According to data from OpenAlex, J. L. Alay has authored 32 papers receiving a total of 607 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 12 papers in Surfaces, Coatings and Films and 11 papers in Computational Mechanics. Recurrent topics in J. L. Alay's work include Semiconductor materials and devices (21 papers), Electron and X-Ray Spectroscopy Techniques (12 papers) and Ion-surface interactions and analysis (11 papers). J. L. Alay is often cited by papers focused on Semiconductor materials and devices (21 papers), Electron and X-Ray Spectroscopy Techniques (12 papers) and Ion-surface interactions and analysis (11 papers). J. L. Alay collaborates with scholars based in Belgium, Spain and Japan. J. L. Alay's co-authors include M. Hirose, Wilfried Vandervorst, J.R. Morante, Á. Diéguez, A. Romano‐Rodrı́guez, J.P. Kappler, Udo Weimar, W. Göpel, Nicolae Bârsan and Masataka Hirose and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. L. Alay

26 papers receiving 578 citations

Peers

J. L. Alay

EEE

AMPO

S. Iraj Najafi Canada

Kathleen M. Krause Canada

J. F. Bresse France

L. Haji France

Yoshihiro Sugita Japan

J. D. Grange United Kingdom

N. L. Dmitruk Ukraine

E. Bergignat France

R. Delamare Belgium

Marcel Winhold Germany

S. Iraj Najafi Canada

J. L. Alay

414 ×0.8

EEE

123 ×0.5

58 ×0.4

83 ×0.7

273 ×3.1

AMPO

Citations per year, relative to J. L. Alay J. L. Alay (= 1×) peers S. Iraj Najafi

Countries citing papers authored by J. L. Alay

Since Specialization

Citations

This map shows the geographic impact of J. L. Alay's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. L. Alay with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. L. Alay more than expected).

Fields of papers citing papers by J. L. Alay

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. L. Alay. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. L. Alay. The network helps show where J. L. Alay may publish in the future.

Co-authorship network of co-authors of J. L. Alay

This figure shows the co-authorship network connecting the top 25 collaborators of J. L. Alay. A scholar is included among the top collaborators of J. L. Alay based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. L. Alay. J. L. Alay is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Alay, J. L.. (2002). Historia de los tibetanos: de los orígenes históricos al conflicto político actual. Dialnet (Universidad de la Rioja). 3(2). 191–193. 1 indexed citations

Alay, J. L., et al.. (2002). Ambaixador a la cort del Gran Mogol: viatges d'un jesuïta català del segle XVI a l'Índia, Pakistan, Afganistan i Himàlaia. Dialnet (Universidad de la Rioja). 0–0. 1 indexed citations

Temple‐Boyer, Pierre, et al.. (2000). Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(5). 2389–2393. 34 indexed citations

Temple‐Boyer, P., Bekkay Hajji, J. L. Alay, J.R. Morante, & A. Martínez. (1999). Properties of SiOxNy films deposited by LPCVD from SiH4/N2O/NH3 gaseous mixture. Sensors and Actuators A Physical. 74(1-3). 52–55. 22 indexed citations

Alay, J. L. & M. Hirose. (1997). The valence band alignment at ultrathin SiO2/Si interfaces. Journal of Applied Physics. 81(3). 1606–1608. 139 indexed citations

Coster, W. De, et al.. (1996). In situ observation by RBS of oxygen gettering during Cs sputtering of Si-based materials. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 118(1-4). 82–87. 4 indexed citations

Alay, J. L., et al.. (1995). Determination of Valence Band Alignment at Ultrathin SiO₂/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy. Japanese Journal of Applied Physics. 34(6A). L653–L653. 23 indexed citations

Alay, J. L., et al.. (1995). The Valence Band Alignment at Ultra-Thin SiO2/Si(100) Interfaces Determined by High-Resolution X-Ray Photoelectron Spectroscopy.

Hove, M. Van, et al.. (1995). Optimization of reactive ion etching of Al0.48In0.52As in CH4/H2 by the experimental design method. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(3). 895–901.

10.

Björkman, C. H., J. L. Alay, Híromichi Nishimura, et al.. (1995). Core-level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high-resolution x-ray photoelectron spectroscopy. Applied Physics Letters. 67(14). 2049–2051. 15 indexed citations

11.

Yoshida, Takeshi, et al.. (1995). Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides. Japanese Journal of Applied Physics. 34(7B). L903–L903. 53 indexed citations

12.

Björkman, C. H., Híromichi Nishimura, Tsutomu Yamazaki, et al.. (1995). Chemical Stability of SC1-Cleaned Hydrogen Terminated Si(100) Surfaces. MRS Proceedings. 386. 1 indexed citations

13.

Brijs, Bert, W. De Coster, H. Bender, et al.. (1994). Sputtering phenomena of CoSi2 under low energy oxygen bombardment. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 85(1-4). 306–310. 1 indexed citations

14.

Coster, W. De, Bert Brijs, H. Bender, J. L. Alay, & Wilfried Vandervorst. (1994). RBS, AES and XPS analysis of ion beam induced nitridation of Si and SiGe alloys. Vacuum. 45(4). 389–395. 16 indexed citations

15.

Coster, W. De, Bert Brijs, Petre Osiceanu, et al.. (1994). Ion beam mixing and oxidation of a Si/Ge-multilayer under oxygen bombardment. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 85(1-4). 911–915. 16 indexed citations

16.

Alay, J. L. & Wilfried Vandervorst. (1994). Model for the emission ofSi+ions during oxygen bombardment of Si(100) surfaces. Physical review. B, Condensed matter. 50(20). 15015–15025. 23 indexed citations

17.

Elst, Kathy, Wilfried Vandervorst, J. L. Alay, J. Snauwaert, & L. Hellemans. (1993). Influence of oxygen on the formation of ripples on Si. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(6). 1968–1981. 49 indexed citations

18.

Alay, J. L., Steven Verhaverbeke, W. Vandervorst, & Marc Heyns. (1992). Critical Parameters for Obtaining Low Particle Densities in an HF-Last Process.

19.

Alay, J. L., et al.. (1991). Quantitative analysis of W(N), TiW and TiW(N) matrices using XPS, AES, RBS, EPMA and XRD. Surface and Interface Analysis. 17(6). 373–382. 8 indexed citations

20.

Boeck, J. De, J. L. Alay, Jan Vanhellemont, et al.. (1991). Evaluation of GaAs Regrowth on A Novel GaAs/SiO2 Composite Surface On Silicon. MRS Proceedings. 221. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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