Tomás Palacios

2.0k total citations
31 papers, 1.6k citations indexed

About

Tomás Palacios is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Tomás Palacios has authored 31 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 22 papers in Condensed Matter Physics and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Tomás Palacios's work include GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (10 papers) and Silicon Carbide Semiconductor Technologies (10 papers). Tomás Palacios is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (10 papers) and Silicon Carbide Semiconductor Technologies (10 papers). Tomás Palacios collaborates with scholars based in United States, China and Australia. Tomás Palacios's co-authors include Min Sun, Xiang Gao, Yuhao Zhang, Daniel Piedra, Tatsuya Fujishima, Shiping Guo, Dong Seup Lee, Patrick Fay, Hyung‐Seok Lee and Han Wang and has published in prestigious journals such as Advanced Materials, Nano Letters and ACS Nano.

In The Last Decade

Tomás Palacios

28 papers receiving 1.6k citations

Peers

Tomás Palacios

CMP

EEE

EOMM

AMPO

W. Kruppa United States

Junji Kotani Japan

Tom Zimmermann United States

H. Bremers Germany

Sandip Ghosh India

J.S. Flynn United States

L. Görgens Germany

Caroline Chèze Germany

T. Malinauskas Lithuania

Christopher D. Yerino United States

W. Kruppa United States

Tomás Palacios

995 ×0.8

CMP

1.6k ×1.5

EEE

429 ×0.7

EOMM

370 ×0.8

930 ×2.7

AMPO

Citations per year, relative to Tomás Palacios Tomás Palacios (= 1×) peers W. Kruppa

Countries citing papers authored by Tomás Palacios

Since Specialization

Citations

This map shows the geographic impact of Tomás Palacios's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tomás Palacios with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tomás Palacios more than expected).

Fields of papers citing papers by Tomás Palacios

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tomás Palacios. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tomás Palacios. The network helps show where Tomás Palacios may publish in the future.

Co-authorship network of co-authors of Tomás Palacios

This figure shows the co-authorship network connecting the top 25 collaborators of Tomás Palacios. A scholar is included among the top collaborators of Tomás Palacios based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tomás Palacios. Tomás Palacios is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chang, Cheng, et al.. (2025). GaN Schottky‐Gate p‐Field Effect Transistors Based on GaN‐on‐Si Platform Operational at High Temperatures. physica status solidi (a). 222(23).

Li, Xingchen, et al.. (2025). First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer. 769–772.

Niroula, John, et al.. (2024). Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. 1–2. 1 indexed citations

Luo, Yue, Ji Hoon Park, Jiadi Zhu, et al.. (2024). Highly Confined Hybridized Polaritons in Scalable van der Waals Heterostructure Resonators. ACS Nano. 18(27). 17492–17499. 1 indexed citations

Zhang, Yuhao, Ahmad Zubair, Zhihong Liu, et al.. (2021). GaN FinFETs and trigate devices for power and RF applications: review and perspective. Semiconductor Science and Technology. 36(5). 54001–54001. 89 indexed citations

Palacios, Tomás. (2017). 2016 International Workshop on Nitride Semiconductors (IWN 2016). 3 indexed citations

Lee, Ko‐Tao, C. Bayram, Daniel Piedra, et al.. (2017). GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration. IEEE Electron Device Letters. 38(8). 1094–1096. 21 indexed citations

Berhane, Amanuel M., Kwang‐Yong Jeong, Zoltán Bodrog, et al.. (2017). Single‐Photon Emission: Bright Room‐Temperature Single‐Photon Emission from Defects in Gallium Nitride (Adv. Mater. 12/2017). Advanced Materials. 29(12). 2 indexed citations

Zúñiga‐Pérez, J., Vincent Consonni, L. Lymperakis, et al.. (2016). Polarity in GaN and ZnO: Theory, measurement, growth, and devices. Applied Physics Reviews. 3(4). 110 indexed citations

10.

Nourbakhsh, Amirhasan, Ahmad Zubair, Redwan N. Sajjad, et al.. (2016). Serially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography. DSpace@MIT (Massachusetts Institute of Technology). 5 indexed citations

11.

Fitzgerald, Eugene A., Li Zhang, C. C. Huang, et al.. (2016). (Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices. ECS Transactions. 75(12). 31–37. 5 indexed citations

12.

Matioli, Elison & Tomás Palacios. (2015). Room-Temperature Ballistic Transport in III-Nitride Heterostructures. Nano Letters. 15(2). 1070–1075. 18 indexed citations

13.

Zhang, Yuhao, Min Sun, Daniel Piedra, et al.. (2014). GaN-on-Si Vertical Schottky and p-n Diodes. IEEE Electron Device Letters. 35(6). 618–620. 162 indexed citations

14.

Araki, Tsutomu, Yasushi Nanishi, Tatsuya Fujishima, et al.. (2014). Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates. Applied Physics Express. 7(7). 71001–71001. 52 indexed citations

15.

Hsu, Allen, Han Wang, Vincenzo Vinciguerra, et al.. (2013). pH sensing properties of graphene solution-gated field-effect transistors. Journal of Applied Physics. 114(8). 84 indexed citations

16.

Ervin, Matthew H., et al.. (2012). Electrochemical Double Layer Capacitance of Metallic and Semiconducting SWCNTs and Single Layer Graphene. ECS Transactions. 41(22). 153–160. 4 indexed citations

17.

Lee, Hyung‐Seok, Daniel Piedra, Min Sun, et al.. (2012). 3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier. IEEE Electron Device Letters. 33(7). 982–984. 126 indexed citations

18.

Lee, Dong Seup, Jinwook Chung, Han Wang, et al.. (2011). 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment. IEEE Electron Device Letters. 32(6). 755–757. 131 indexed citations

19.

Ryu, Kevin, Jinwook Chung, Bin Lu, & Tomás Palacios. (2010). (Invited) Wafer Bonding Technology in Nitride Semiconductors for Applications in Energy and Communications. ECS Transactions. 33(4). 125–135. 3 indexed citations

20.

Marino, Fabio Alessio, et al.. (2009). Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors. IEEE Transactions on Electron Devices. 57(1). 353–360. 96 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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