Caroline Chèze

1.5k citations

46 papers · 1.2k indexed · h-index 18

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 41
- GaN-based semiconductor devices and materials 41
Electronic, Optical and Magnetic Materials 21
- Ga2O3 and related materials 21

Co-authors: Lutz Geelhaar Henning Riechert O. Brandt H. Riechert W. Weber Carsten Pfüller Th. Kehagias Ph. Komninou
Journals: Applied Physics Letters (9 papers)Physical Review Applied (3 papers)Physical Review B (3 papers)Journal of Applied Physics (2 papers)Nano Research (2 papers)
Partner nations: Germany Poland United Kingdom

In The Last Decade

Caroline Chèze

45 papers receiving 1.2k citations

Peers

Countries citing papers authored by Caroline Chèze

Since Specialization

Citations

This map shows the geographic impact of Caroline Chèze's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Caroline Chèze with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Caroline Chèze more than expected).

Fields of papers citing papers by Caroline Chèze

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Caroline Chèze. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Caroline Chèze. The network helps show where Caroline Chèze may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Caroline Chèze, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Caroline Chèze Line = papers co-authored together Caroline Chèze links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Carrier Diffusion in GaN: A Cathodoluminescence Study. I. Temperature-Dependent Generation Volume Physical Review Applied ·U. Jahn, Vladimir M. Kaganer, Karl K. Sabelfeld, Gary W. Earl, Jonas Lähnemann, Carsten Pfüller, Timur Flissikowski, Caroline Chèze, K. Biermann, Raffaella Calarco, O. Brandt	2022	5
2	Carrier Diffusion in GaN: A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion Physical Review Applied ·O. Brandt, Vladimir M. Kaganer, Jonas Lähnemann, Timur Flissikowski, Carsten Pfüller, Karl K. Sabelfeld, Gary W. Earl, Caroline Chèze, Raffaella Calarco, H. T. Grahn, U. Jahn	2022	6
3	Role of hole confinement in the recombination properties of InGaN quantum structures Scientific Reports ·刘秉铮, M. Albrecht, F Mahler, Jens W. Tomm, L. Lymperakis, Caroline Chèze, Raffaella Calarco, Jörg Neugebauer, Tobias Schulz	2019	6
4	Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells Physical Review Materials ·L. Lymperakis, Tobias Schulz, Christoph Freysoldt, 刘秉铮, Z. Chen, E.G. Wang, Bo Shen, Caroline Chèze, M. Siekacz, Xinqiang Wang, M. Albrecht, Jörg Neugebauer	2018	45
5	Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices Journal of Applied Physics ·Caroline Chèze, M. Siekacz, Fabio Isa, B. Jenichen, W.T. Chittenden, Paula Nelas, Tobias Schulz, M. Albrecht, C. Skierbiszewski, Raffaella Calarco, Henning Riechert	2016	13
6	Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy Crystal Growth & Design ·Fabio Isa, Caroline Chèze, M. Siekacz, Christian Hauswald, Jonas Lähnemann, Sergio Fernández‐Garrido, Edi Sulistio Budi, M. Ramsteiner, Yadira Arroyo Rojas Dasilva, O. Brandt, Giovanni Isella, Rolf Erni, Raffaella Calarco, Henning Riechert, Leo Miglio	2015	10
7	Step-flow growth mode instability of N-polar GaN under N-excess Applied Physics Letters ·Caroline Chèze, Marta Sawicka, M. Siekacz, Henryk Turski, G. Cywiński, Julita Smalc‐Koziorowska, J.L. Weyher, M. Kryśko, B. Łucznik, Michał Boćkowski, C. Skierbiszewski	2013	15
8	Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Caroline Chèze, M. Siekacz, G. Muzioł, Henryk Turski, Szymon Grzanka, M. Kryśko, J.L. Weyher, Michał Boćkowski, Christian Hauswald, Jonas Lähnemann, O. Brandt, M. Albrecht, C. Skierbiszewski	2013	16
9	Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates Applied Physics Letters ·Marta Sawicka, Caroline Chèze, Henryk Turski, G. Muzioł, Szymon Grzanka, Christian Hauswald, O. Brandt, M. Siekacz, Robert Kucharski, T. Remmele, M. Albrecht, M. Kryśko, Ewa Grzanka, Tomasz Sochacki, C. Skierbiszewski	2013	9
10	Waveguide Design for Long Wavelength InGaN Based Laser Diodes Acta Physica Polonica A ·G. Muzioł, Henryk Turski, M. Siekacz, Marta Sawicka, P. Wolny, Caroline Chèze, G. Cywiński, P. Perlin, C. Skierbiszewski	2012	10
11	Measurement of the Al content in AlGaN epitaxial layers by combined energy‐dispersive X‐ray and electron energy‐loss spectroscopy in a transmission electron microscope Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Houari Amari, Menno J. Kappers, C. J. Humphreys, Caroline Chèze, T Walther	2012	6
12	Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers Journal of Physics Conference Series ·Houari Amari, Liang Lu Wang, Lutz Geelhaar, Caroline Chèze, Menno J. Kappers, T Walther	2011	8
13	Different growth rates for catalyst-induced and self-induced GaN nanowires Applied Physics Letters ·Caroline Chèze, Lutz Geelhaar, B. Jenichen, H. Riechert	2010	43
14	Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit Nano Research ·Carsten Pfüller, O. Brandt, Timur Flissikowski, Caroline Chèze, Lutz Geelhaar, H. T. Grahn, Henning Riechert	2010	22
15	Direct comparison of catalyst-free and catalyst-induced GaN nanowires Nano Research ·Caroline Chèze, Lutz Geelhaar, O. Brandt, W. Weber, Henning Riechert, S. Münch, Ralph Rothemund, Stephan Reitzenstein, A. Forchel, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas	2010	146
16	Atomic‐scale configuration of catalyst particles on GaN nanowires Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, Caroline Chèze, Lutz Geelhaar, H. Riechert, Th. Karakostas	2008	4
17	Defect characterization and analysis of III‐V nanowires grown by Ni‐promoted MBE physica status solidi (a) ·Leonardo Lari, R. Murray, Mhairi Gass, T.J. Bullough, Paul R. Chalker, Joseph Kioseoglou, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, Th. Karakostas, Caroline Chèze, Lutz Geelhaar, H. Riechert	2008	6
18	Silicon to nickel‐silicide axial nanowire heterostructures for high performance electronics physica status solidi (b) ·W. Weber, Lutz Geelhaar, E. Unger, Caroline Chèze, Franz Kreupl, Henning Riechert, Paolo Lugli	2007	31
19	Quantitative EELS Analysis of AlGaN Nanowires Grown by Ni Promoted MBE on Sapphire Substrate MRS Proceedings ·Leonardo Lari, R. Murray, Mhairi Gass, Layla Viana Rodrigues Lima, Paul R. Chalker, Caroline Chèze, Lutz Geelhaar, Henning Riechert	2007	1
20	Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts Nano Letters ·W. Weber, Lutz Geelhaar, Andrew Graham, E. Unger, Georg S. Duesberg, M. Liebau, W. Pamler, Caroline Chèze, Henning Riechert, Paolo Lugli, Franz Kreupl	2006	200

About Caroline Chèze

Caroline Chèze is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Structural Biology, Surfaces, Coatings and Films and Atomic and Molecular Physics, and Optics, having authored 46 papers that have together received 1.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (41 papers), Ga2O3 and related materials (21 papers), Nanowire Synthesis and Applications (18 papers), Semiconductor Quantum Structures and Devices (13 papers), ZnO doping and properties (13 papers), Semiconductor materials and devices (12 papers), Semiconductor materials and interfaces (4 papers) and Electron and X-Ray Spectroscopy Techniques (4 papers). The work is most often cited by research in Condensed Matter Physics (832 citations), Electronic, Optical and Magnetic Materials (491 citations), Biomedical Engineering (594 citations), Atomic and Molecular Physics, and Optics (365 citations) and Materials Chemistry (536 citations). Caroline Chèze has collaborated with scholars based in Germany, Poland and United Kingdom. Frequent co-authors include Lutz Geelhaar, Henning Riechert, O. Brandt, H. Riechert, W. Weber, Carsten Pfüller, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos and Th. Karakostas. Their work appears in journals such as Applied Physics Letters, Physical Review Applied, Physical Review B, Journal of Applied Physics and Nano Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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