Qingyun Xie

1.1k total citations · 1 hit paper
42 papers, 808 citations indexed

About

Qingyun Xie is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Qingyun Xie has authored 42 papers receiving a total of 808 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 33 papers in Condensed Matter Physics and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Qingyun Xie's work include GaN-based semiconductor devices and materials (33 papers), Semiconductor materials and devices (16 papers) and Silicon Carbide Semiconductor Technologies (15 papers). Qingyun Xie is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), Semiconductor materials and devices (16 papers) and Silicon Carbide Semiconductor Technologies (15 papers). Qingyun Xie collaborates with scholars based in United States, Bangladesh and United Arab Emirates. Qingyun Xie's co-authors include Tomás Palacios, Nadim Chowdhury, Mengyang Yuan, Kai Cheng, Han Wui Then, Yuhao Zhang, Nitul S. Rajput, Koon Hoo Teo, Eiji Yagyu and Koji Yamanaka and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Qingyun Xie

36 papers receiving 781 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

2021 207 citations Koon Hoo Teo, Yuhao Zhang et al. Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Qingyun Xie United States	14	683	618	264	158	115	42	808
Yang Lu China	14	415 0.6×	398 0.6×	169 0.6×	121 0.8×	86 0.7×	65	530
Raghunandan Swain India	13	217 0.3×	244 0.4×	110 0.4×	58 0.4×	72 0.6×	46	366
Injun Hwang South Korea	13	500 0.7×	515 0.8×	294 1.1×	122 0.8×	111 1.0×	36	715
Arnab Bose India	14	194 0.3×	182 0.3×	219 0.8×	468 3.0×	185 1.6×	25	630
Sandeepan DasGupta United States	17	260 0.4×	880 1.4×	108 0.4×	81 0.5×	90 0.8×	55	979
Takuya Hoshi Japan	11	142 0.2×	325 0.5×	63 0.2×	176 1.1×	62 0.5×	57	418
Gang Lyu China	12	261 0.4×	575 0.9×	74 0.3×	69 0.4×	59 0.5×	63	646
K. Koi Japan	12	110 0.2×	296 0.5×	236 0.9×	523 3.3×	169 1.5×	33	613
Son Le United States	9	110 0.2×	274 0.4×	183 0.7×	441 2.8×	117 1.0×	24	513

Countries citing papers authored by Qingyun Xie

Since Specialization

Citations

This map shows the geographic impact of Qingyun Xie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Qingyun Xie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Qingyun Xie more than expected).

Fields of papers citing papers by Qingyun Xie

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Qingyun Xie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Qingyun Xie. The network helps show where Qingyun Xie may publish in the future.

Co-authorship network of co-authors of Qingyun Xie

This figure shows the co-authorship network connecting the top 25 collaborators of Qingyun Xie. A scholar is included among the top collaborators of Qingyun Xie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Qingyun Xie. Qingyun Xie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Xie, Qingyun, et al.. (2025). Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon. physica status solidi (a). 222(23).

Niroula, John, Qingyun Xie, Minsik Oh, et al.. (2025). High Temperature AlGaN/GaN MISHEMT With W/AlON Gate Stack and I _max>1 A/mm at 500 ^∘C. IEEE Electron Device Letters. 46(9). 1477–1480.

Xie, Qingyun, Yue Wang, Kumud Ranjan, et al.. (2025). GaN-on-Si HEMT for D-Band Power Amplification Demonstrating 0.67 W/mm at 10 V. IEEE Electron Device Letters. 46(10). 1749–1752. 1 indexed citations

Niroula, John, Mengyang Yuan, Qingyun Xie, et al.. (2025). Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions. IEEE Transactions on Electron Devices. 72(12). 6610–6617.

Niroula, John, et al.. (2024). Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. 1–2. 1 indexed citations

Xie, Qingyun, et al.. (2024). Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si. Applied Physics Letters. 125(2). 3 indexed citations

Chang, Cheng, et al.. (2024). GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C. 1–2.

Xie, Qingyun, Hui Teng Tan, Siyu Liu, et al.. (2024). Multi-channel AlN/GaN Schottky barrier diodes. Applied Physics Express. 18(1). 16502–16502. 1 indexed citations

Niroula, John, Qingyun Xie, Nitul S. Rajput, et al.. (2024). High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C. Applied Physics Letters. 124(20). 12 indexed citations

10.

Xie, Qingyun, John Niroula, Nitul S. Rajput, et al.. (2024). Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure. Applied Physics Letters. 124(24). 1 indexed citations

11.

Qin, Yuan, Ming Xiao, Ruizhe Zhang, et al.. (2023). 1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier. IEEE Electron Device Letters. 44(7). 1052–1055. 16 indexed citations

12.

Fu, Kai, Qingyun Xie, Mengyang Yuan, et al.. (2023). Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments. Applied Physics Letters. 123(24). 7 indexed citations

13.

Yuan, Mengyang, John Niroula, Qingyun Xie, et al.. (2023). Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation. IEEE Electron Device Letters. 44(7). 1068–1071. 25 indexed citations

14.

Xie, Qingyun, Mengyang Yuan, John Niroula, et al.. (2023). Highly Scaled GaN Complementary Technology on a Silicon Substrate. IEEE Transactions on Electron Devices. 70(4). 2121–2128. 19 indexed citations

15.

Yuan, Mengyang, Qingyun Xie, Kai Fu, et al.. (2022). GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform. IEEE Electron Device Letters. 43(11). 1842–1845. 24 indexed citations

16.

Yuan, Mengyang, Qingyun Xie, John Niroula, Nadim Chowdhury, & Tomás Palacios. (2022). GaN Memory Operational at 300 °C. IEEE Electron Device Letters. 43(12). 2053–2056. 13 indexed citations

17.

Teo, Koon Hoo, Yuhao Zhang, Nadim Chowdhury, et al.. (2021). Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects. Journal of Applied Physics. 130(16). 207 indexed citations breakdown →

18.

Xie, Qingyun, Nadim Chowdhury, Ahmad Zubair, et al.. (2021). NbN-Gated GaN Transistor Technology for Applications in Quantum Computing Systems. Symposium on VLSI Technology. 1–2. 5 indexed citations

19.

Chowdhury, Nadim, Qingyun Xie, Mengyang Yuan, et al.. (2020). Regrowth-Free GaN-Based Complementary Logic on a Si Substrate. IEEE Electron Device Letters. 41(6). 820–823. 97 indexed citations

20.

Chowdhury, Nadim, Jori Lemettinen, Qingyun Xie, et al.. (2019). p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si. IEEE Electron Device Letters. 40(7). 1036–1039. 114 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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