John Niroula

548 total citations
23 papers, 378 citations indexed

About

John Niroula is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, John Niroula has authored 23 papers receiving a total of 378 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 18 papers in Condensed Matter Physics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in John Niroula's work include GaN-based semiconductor devices and materials (18 papers), Silicon Carbide Semiconductor Technologies (12 papers) and Semiconductor materials and devices (10 papers). John Niroula is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Silicon Carbide Semiconductor Technologies (12 papers) and Semiconductor materials and devices (10 papers). John Niroula collaborates with scholars based in United States, Bangladesh and United Arab Emirates. John Niroula's co-authors include Matthew Marinella, Robin Jacobs-Gedrim, Tomás Palacios, Sapan Agarwal, Nadim Chowdhury, Qingyun Xie, Conrad D. James, Nitul S. Rajput, Steven J. Plimpton and Alexander H. Hsia and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

John Niroula

18 papers receiving 375 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
John Niroula United States 12 349 166 52 46 35 23 378
Ko‐Tao Lee Taiwan 10 278 0.8× 83 0.5× 52 1.0× 77 1.7× 58 1.7× 15 328
Ashwani Kumar India 10 254 0.7× 96 0.6× 87 1.7× 28 0.6× 99 2.8× 38 379
Ming Huang China 13 371 1.1× 40 0.2× 81 1.6× 44 1.0× 106 3.0× 52 567
Lorenzo Fratino France 10 121 0.3× 122 0.7× 103 2.0× 14 0.3× 51 1.5× 16 277
J. Larroque France 10 280 0.8× 131 0.8× 89 1.7× 89 1.9× 72 2.1× 19 454
D. Crotti Belgium 15 417 1.2× 48 0.3× 74 1.4× 55 1.2× 83 2.4× 34 518
Jana Münchenberger Germany 6 249 0.7× 61 0.4× 67 1.3× 90 2.0× 41 1.2× 7 384
Christian D. Matthus Germany 11 284 0.8× 43 0.3× 30 0.6× 22 0.5× 48 1.4× 25 349
Guoyi Shi China 8 202 0.6× 78 0.5× 134 2.6× 30 0.7× 112 3.2× 15 375
Shamiul Alam United States 12 285 0.8× 65 0.4× 33 0.6× 11 0.2× 127 3.6× 43 404

Countries citing papers authored by John Niroula

Since Specialization
Citations

This map shows the geographic impact of John Niroula's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John Niroula with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John Niroula more than expected).

Fields of papers citing papers by John Niroula

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John Niroula. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John Niroula. The network helps show where John Niroula may publish in the future.

Co-authorship network of co-authors of John Niroula

This figure shows the co-authorship network connecting the top 25 collaborators of John Niroula. A scholar is included among the top collaborators of John Niroula based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John Niroula. John Niroula is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pratt, Jerry W., John Niroula, Chandan Joishi, et al.. (2025). High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors. ArXiv.org. 1(3).
2.
Niroula, John, Mengyang Yuan, Qingyun Xie, et al.. (2025). Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions. IEEE Transactions on Electron Devices. 72(12). 6610–6617.
3.
Niroula, John, Qingyun Xie, Minsik Oh, et al.. (2025). High Temperature AlGaN/GaN MISHEMT With W/AlON Gate Stack and I max>1 A/mm at 500 ∘C. IEEE Electron Device Letters. 46(9). 1477–1480.
4.
5.
Niroula, John, Qingyun Xie, Nitul S. Rajput, et al.. (2024). High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C. Applied Physics Letters. 124(20). 12 indexed citations
6.
Niroula, John, et al.. (2024). Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. 1–2. 1 indexed citations
7.
Xie, Qingyun, John Niroula, Nitul S. Rajput, et al.. (2024). Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure. Applied Physics Letters. 124(24). 1 indexed citations
8.
Xie, Qingyun, Mengyang Yuan, John Niroula, et al.. (2023). Highly Scaled GaN Complementary Technology on a Silicon Substrate. IEEE Transactions on Electron Devices. 70(4). 2121–2128. 19 indexed citations
9.
Yuan, Mengyang, John Niroula, Qingyun Xie, et al.. (2023). Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation. IEEE Electron Device Letters. 44(7). 1068–1071. 25 indexed citations
10.
Xie, Qingyun, Mengyang Yuan, John Niroula, et al.. (2023). Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C. DSpace@MIT (Massachusetts Institute of Technology). 1–2. 9 indexed citations
11.
Yuan, Mengyang, Qingyun Xie, John Niroula, Nadim Chowdhury, & Tomás Palacios. (2022). GaN Memory Operational at 300 °C. IEEE Electron Device Letters. 43(12). 2053–2056. 13 indexed citations
12.
Yuan, Mengyang, Qingyun Xie, Kai Fu, et al.. (2022). GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform. IEEE Electron Device Letters. 43(11). 1842–1845. 24 indexed citations
13.
Xie, Qingyun, Mengyang Yuan, John Niroula, et al.. (2022). Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform. 2022 International Electron Devices Meeting (IEDM). 35.3.1–35.3.4. 9 indexed citations
14.
Yuan, Mengyang, Qingyun Xie, John Niroula, et al.. (2022). High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology. DSpace@MIT (Massachusetts Institute of Technology). 40–44. 15 indexed citations
15.
Palacios, Tomás, Ahmad Zubair, John Niroula, et al.. (2021). GaN 2.0: Power FinFETs, Complementary Gate Drivers and Low-Cost Vertical Devices. 6–10. 11 indexed citations
16.
Zubair, Ahmad, John Niroula, Nadim Chowdhury, et al.. (2020). Materials and Technology Issues for the Next Generation of Power Electronic Devices. Aaltodoc (Aalto University). 1–2.
17.
Agarwal, Sapan, John Niroula, Robin Jacobs-Gedrim, et al.. (2019). Using Floating-Gate Memory to Train Ideal Accuracy Neural Networks. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. 5(1). 52–57. 32 indexed citations
18.
Jacobs-Gedrim, Robin, Sapan Agarwal, Ronald S. Goeke, et al.. (2018). Analog high resistance bilayer RRAM device for hardware acceleration of neuromorphic computation. Journal of Applied Physics. 124(20). 14 indexed citations
19.
Marinella, Matthew, Sapan Agarwal, Alexander H. Hsia, et al.. (2018). Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator. IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 8(1). 86–101. 126 indexed citations
20.
Niroula, John, Sapan Agarwal, Robin Jacobs-Gedrim, et al.. (2017). Piecewise empirical model (PEM) of resistive memory for pulsed analog and neuromorphic applications. Journal of Computational Electronics. 16(4). 1144–1153. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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