John Niroula

548 citations

23 papers · 378 indexed · h-index 12

Impact in

Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 10%
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design

Papers in ⓘ

Condensed Matter Physics 18
- GaN-based semiconductor devices and materials 18
Electrical and Electronic Engineering 22
- Silicon Carbide Semiconductor Technologies 12
- Semiconductor materials and devices 10
- Advanced Memory and Neural Computing 5
- Ferroelectric and Negative Capacitance Devices 4
- Radio Frequency Integrated Circuit Design 3

Co-authors: Matthew Marinella (5 shared papers)Sapan Agarwal (5 shared papers)Robin Jacobs-Gedrim (5 shared papers)Tomás Palacios (16 shared papers)Nadim Chowdhury (12 shared papers)Qingyun Xie (13 shared papers)Conrad D. James (4 shared papers)Steven J. Plimpton (1 shared paper)
Journals: IEEE Electron Device Letters (4 papers)Applied Physics Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Journal on Emerging and Selected Topics in Circuits and Systems (1 paper)Journal of Computational Electronics (1 paper)
Partner nations: United States Bangladesh United Arab Emirates

In The Last Decade

John Niroula

18 papers receiving 375 citations

Peers

Countries citing papers authored by John Niroula

Since Specialization

Citations

This map shows the geographic impact of John Niroula's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John Niroula with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John Niroula more than expected).

Fields of papers citing papers by John Niroula

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John Niroula. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John Niroula. The network helps show where John Niroula may publish in the future.

Co-authors

The 25 scholars most cited alongside John Niroula, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with John Niroula Line = papers co-authored together John Niroula links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 23 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator IEEE Journal on Emerging and Selected Topics in Circuits and Systems ·Matthew Marinella, Sapan Agarwal, Alexander H. Hsia, Isaac Richter, Robin Jacobs-Gedrim, John Niroula, Steven J. Plimpton, Engin İpek, Conrad D. James	2018	126
2	Using Floating-Gate Memory to Train Ideal Accuracy Neural Networks IEEE Journal on Exploratory Solid-State Computational Devices and Circuits ·Sapan Agarwal, Diana R. Garland, John Niroula, Robin Jacobs-Gedrim, Alex Hsia, Michael S. Van Heukelom, Elliot J. Fuller, B.L. Draper, Matthew Marinella	2019	32
3	Field-induced Acceptor Ionization in Enhancement-mode GaN p-MOSFETs Nadim Chowdhury, Qingyun Xie, John Niroula, Nitul S. Rajput, Kai Cheng, Han Wui Then, Tomás Palacios	2020	32
4	Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation IEEE Electron Device Letters ·Mengyang Yuan, John Niroula, Qingyun Xie, Nitul S. Rajput, Kai Fu, Shisong Luo, Sagar Kumar Das, Abdullah Jubair Bin Iqbal, Bejoy Sikder, Mohamed Fadil Isamotu, Minsik Oh, Savannah R. Eisner, Debbie G. Senesky, Gary W. Hunter, Nadim Chowdhury, Yuji Zhao, Tomás Palacios	2023	25
5	GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform IEEE Electron Device Letters ·Mengyang Yuan, Qingyun Xie, Kai Fu, Toiyob Hossain, John Niroula, James A. Greer, Nadim Chowdhury, Yuji Zhao, Tomás Palacios	2022	24
6	Highly Scaled GaN Complementary Technology on a Silicon Substrate IEEE Transactions on Electron Devices ·Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, James A. Greer, Nitul S. Rajput, Nadim Chowdhury, Tomás Palacios	2023	19
7	Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·Robin Jacobs-Gedrim, Sapan Agarwal, Kathrine E. Knisely, Jim E. Stevens, Michael S. Van Heukelom, David Russell Hughart, John Niroula, Conrad D. James, Matthew Marinella	2017	19
8	High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology DSpace@MIT (Massachusetts Institute of Technology) ·Mengyang Yuan, Qingyun Xie, John Niroula, Mohamed Fadil Isamotu, Nitul S. Rajput, Nadim Chowdhury, Tomás Palacios	2022	15
9	Analog high resistance bilayer RRAM device for hardware acceleration of neuromorphic computation Journal of Applied Physics ·Robin Jacobs-Gedrim, Sapan Agarwal, Ronald S. Goeke, C Christopher Smith, Patrick Sean Finnegan, John Niroula, David Russell Hughart, Paul G. Kotula, Conrad D. James, Matthew Marinella	2018	14
10	GaN Memory Operational at 300 °C IEEE Electron Device Letters ·Mengyang Yuan, Qingyun Xie, John Niroula, Nadim Chowdhury, Tomás Palacios	2022	13
11	High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C Applied Physics Letters ·John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar, Sheikh Ifatur Rahman, Shisong Luo, Rafid Hassan Palash, Bejoy Sikder, Mengyang Yuan, Pradyot Yadav, Gillian K. Micale, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios	2024	12
12	First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate Ahmad Zubair, Joshua Perozek, John Niroula, Özgür Aktaş, V. A. Odnoblyudov, Tomás Palacios	2020	12
13	GaN 2.0: Power FinFETs, Complementary Gate Drivers and Low-Cost Vertical Devices Tomás Palacios, Ahmad Zubair, John Niroula, Joshua Perozek, Nadim Chowdhury, Dongfei Pei, Mark Dipsey, Hal S. Emmer, Bin Lu	2021	11
14	Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform 2022 International Electron Devices Meeting (IEDM) ·Qingyun Xie, Mengyang Yuan, John Niroula, James A. Greer, Nitul S. Rajput, Nadim Chowdhury, Tomás Palacios	2022	9
15	Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C DSpace@MIT (Massachusetts Institute of Technology) ·Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, Shisong Luo, Kai Fu, Nitul S. Rajput, Ayan Biswas Pranta, Pradyot Yadav, Yuji Zhao, Nadim Chowdhury, Tomás Palacios	2023	9
16	Piecewise empirical model (PEM) of resistive memory for pulsed analog and neuromorphic applications Journal of Computational Electronics ·John Niroula, Sapan Agarwal, Robin Jacobs-Gedrim, Richard Schiek, David Russell Hughart, Alex Hsia, Conrad D. James, Matthew Marinella	2017	4
17	Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C John Niroula, Matthew Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios	2024	1
18	Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure Applied Physics Letters ·Bejoy Sikder, Toiyob Hossain, Qingyun Xie, John Niroula, Nitul S. Rajput, Koon Hoo Teo, Hiroshi Amano, Tomás Palacios, Nadim Chowdhury	2024	1
19	High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors ArXiv.org ·Seungheon Shin, Hridibrata Pal, Jerry W. Pratt, John Niroula, Yinxuan Zhu, Chandan Joishi, Brianna Klein, Andrew Armstrong, Andrew A. Allerman, Tomás Palacios, Siddharth Rajan	2025	0
20	Degradation Analysis of InAlN/GaN Transistors Under Simulated Venus Surface Conditions IEEE Transactions on Electron Devices ·Savannah R. Eisner, Zahra N. Heussen, Sergio Cordero, John Niroula, Jared Naphy, Mohamed Fadil Isamotu, Harshad Surdi, Mengyang Yuan, Qingyun Xie, R. J. Nemanich, Tomás Palacios, Mina Rais‐Zadeh, Gary W. Hunter, Debbie G. Senesky	2025	0

About John Niroula

John Niroula is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Polymers and Plastics and Cellular and Molecular Neuroscience, having authored 23 papers that have together received 378 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (18 papers), Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (10 papers), Ga2O3 and related materials (5 papers), Advanced Memory and Neural Computing (5 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Radio Frequency Integrated Circuit Design (3 papers) and Neuroscience and Neural Engineering (2 papers). The work is most often cited by research in Condensed Matter Physics (166 citations), Electrical and Electronic Engineering (349 citations), Electronic, Optical and Magnetic Materials (52 citations), Cellular and Molecular Neuroscience (46 citations) and Polymers and Plastics (31 citations). John Niroula has collaborated with scholars based in United States, Bangladesh and United Arab Emirates. Frequent co-authors include Matthew Marinella, Sapan Agarwal, Robin Jacobs-Gedrim, Tomás Palacios, Nadim Chowdhury, Qingyun Xie, Conrad D. James, Steven J. Plimpton, Alexander H. Hsia and Mengyang Yuan. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Journal on Emerging and Selected Topics in Circuits and Systems and Journal of Computational Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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