Fatih Akyol

1.4k citations

24 papers · 1.2k indexed · h-index 18

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 24
- GaN-based semiconductor devices and materials 24
Electronic, Optical and Magnetic Materials 12
- Ga2O3 and related materials 12

Co-authors: Siddharth Rajan Sriram Krishnamoorthy Yuewei Zhang Digbijoy N. Nath Pil Sung Park Sanyam Bajaj Andrew Armstrong Andrew A. Allerman
Journals: Applied Physics Letters (11 papers)Applied Physics Express (3 papers)Japanese Journal of Applied Physics (2 papers)IEEE Electron Device Letters (1 paper)Superlattices and Microstructures (1 paper)
Partner nations: United States Türkiye Germany

In The Last Decade

Fatih Akyol

23 papers receiving 1.2k citations

Peers

Countries citing papers authored by Fatih Akyol

Since Specialization

Citations

This map shows the geographic impact of Fatih Akyol's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fatih Akyol with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fatih Akyol more than expected).

Fields of papers citing papers by Fatih Akyol

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fatih Akyol. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fatih Akyol. The network helps show where Fatih Akyol may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Fatih Akyol, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Fatih Akyol Line = papers co-authored together Fatih Akyol links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm IEEE Electron Device Letters ·Sanyam Bajaj, Andrew A. Allerman, Andrew Armstrong, Towhidur Razzak, 唐永忠, Siddhartha Sankar Baruah, Shahadat H. Sohel, Yuewei Zhang, Wu Lu, Aaron R. Arehart, Fatih Akyol, Siddharth Rajan	2017	51
2	Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content Applied Physics Express ·Fatih Akyol, Yuewei Zhang, Sriram Krishnamoorthy, Siddharth Rajan	2017	15
3	Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity IEEE Transactions on Electron Devices ·Sanyam Bajaj, 牛新书, Fatih Akyol, Pil Sung Park, Yuewei Zhang, Julie Lindmark, Sriram Krishnamoorthy, David J. Meyer, Siddharth Rajan	2017	67
4	Small-signal characteristics of graded AlGaN channel PolFETs Sanyam Bajaj, 牛新书, Fatih Akyol, Pil Sung Park, Yuewei Zhang, Shahadat H. Sohel, Sriram Krishnamoorthy, David J. Meyer, Siddharth Rajan	2017	2
5	Tunnel-injected sub-260 nm ultraviolet light emitting diodes Applied Physics Letters ·Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Andrew A. Allerman, Michael W. Moseley, Andrew Armstrong, Siddharth Rajan	2017	54
6	Polarity in GaN and ZnO: Theory, measurement, growth, and devices Applied Physics Reviews ·J. Zúñiga‐Pérez, Vincent Consonni, L. Lymperakis, Xiang Kong, A. Trampert, Sergio Fernández‐Garrido, O. Brandt, H. Renevier, S. Keller, Karine Hestroffer, Markus R. Wagner, J. S. Reparaz, Fatih Akyol, Siddharth Rajan, S. Rennesson, Tomás Palacios, G. Feuillet	2016	110
7	Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes Applied Physics Letters ·Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Andrew A. Allerman, Michael W. Moseley, Andrew Armstrong, Siddharth Rajan	2016	35
8	AlGaN channel field effect transistors with graded heterostructure ohmic contacts Applied Physics Letters ·Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Siddharth Rajan	2016	76
9	Deep level defects in N-rich and In-rich InxGa1−XN: in composition dependence Superlattices and Microstructures ·Emre Gür, Fatih Akyol, Sriram Krishnamoorthy, Siddharth Rajan, Steven A. Ringel	2016	0
10	Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions Applied Physics Letters ·Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Andrew A. Allerman, Michael W. Moseley, Andrew Armstrong, Siddharth Rajan	2016	56
11	Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Andrew Armstrong, Andrew A. Allerman, Siddharth Rajan	2016	2
12	Interband tunneling for hole injection in III-nitride ultraviolet emitters Applied Physics Letters ·Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson, Fatih Akyol, Andrew A. Allerman, Michael W. Moseley, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan	2015	72
13	Sub 300 nm wavelength III-Nitride tunnel-injected ultraviolet LEDs Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Mikel Arcelus, Andrew A. Allerman, Michael W. Moseley, Andrew Armstrong, Siddharth Rajan	2015	4
14	GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions Applied Physics Express ·Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Siddharth Rajan	2015	39
15	III-nitride tunnel junctions for efficient solid state lighting Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Sriram Krishnamoorthy, Fatih Akyol, Siddharth Rajan	2014	2
16	Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop Applied Physics Letters ·Fatih Akyol, Sriram Krishnamoorthy, Siddharth Rajan	2013	59
17	Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes Applied Physics Letters ·Fatih Akyol, Digbijoy N. Nath, Sriram Krishnamoorthy, 杨开新, Siddharth Rajan	2012	134
18	N-Polar III–Nitride Green (540 nm) Light Emitting Diode Japanese Journal of Applied Physics ·Fatih Akyol, Digbijoy N. Nath, Emre Gür, Pil Sung Park, Siddharth Rajan	2011	34
19	N-Polar III–Nitride Green (540 nm) Light Emitting Diode Japanese Journal of Applied Physics ·Fatih Akyol, Digbijoy N. Nath, Emre Gür, Pil Sung Park, Siddharth Rajan	2011	67
20	Polarization-engineered GaN/InGaN/GaN tunnel diodes Applied Physics Letters ·Sriram Krishnamoorthy, Digbijoy N. Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, Siddharth Rajan	2010	129

About Fatih Akyol

Fatih Akyol is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Electrical and Electronic Engineering, having authored 24 papers that have together received 1.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (24 papers), Ga2O3 and related materials (12 papers), Semiconductor Quantum Structures and Devices (10 papers), ZnO doping and properties (7 papers), Semiconductor materials and devices (5 papers), Metal and Thin Film Mechanics (5 papers), Photocathodes and Microchannel Plates (5 papers) and Radio Frequency Integrated Circuit Design (2 papers). The work is most often cited by research in Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (616 citations), Atomic and Molecular Physics, and Optics (376 citations), Materials Chemistry (395 citations) and Electrical and Electronic Engineering (468 citations). Fatih Akyol has collaborated with scholars based in United States, Türkiye and Germany. Frequent co-authors include Siddharth Rajan, Sriram Krishnamoorthy, Yuewei Zhang, Digbijoy N. Nath, Pil Sung Park, Sanyam Bajaj, Andrew Armstrong, Andrew A. Allerman, Michael W. Moseley and Michele Esposto. Their work appears in journals such as Applied Physics Letters, Applied Physics Express, Japanese Journal of Applied Physics, IEEE Electron Device Letters and Superlattices and Microstructures.

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