Junji Kotani

1.4k total citations
59 papers, 1.1k citations indexed

About

Junji Kotani is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Junji Kotani has authored 59 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Condensed Matter Physics, 44 papers in Electrical and Electronic Engineering and 25 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Junji Kotani's work include GaN-based semiconductor devices and materials (50 papers), Ga2O3 and related materials (24 papers) and Semiconductor materials and devices (23 papers). Junji Kotani is often cited by papers focused on GaN-based semiconductor devices and materials (50 papers), Ga2O3 and related materials (24 papers) and Semiconductor materials and devices (23 papers). Junji Kotani collaborates with scholars based in Japan, Netherlands and China. Junji Kotani's co-authors include Tamotsu Hashizume, Hideki Hasegawa, Norikazu Nakamura, Atsushi Yamada, Seiya Kasai, Toshihiro Ohki, Naoya Okamoto, Shiro Ozaki, Yuichi Minoura and Masamitsu Kaneko and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Junji Kotani

58 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Junji Kotani Japan 18 910 844 408 323 269 59 1.1k
Tom Zimmermann United States 16 689 0.8× 566 0.7× 399 1.0× 195 0.6× 246 0.9× 41 953
D. Gregušová Slovakia 23 1.2k 1.4× 1.2k 1.4× 729 1.8× 373 1.2× 361 1.3× 113 1.6k
A. M. Wowchak United States 19 783 0.9× 482 0.6× 486 1.2× 281 0.9× 380 1.4× 61 990
A. Koudymov United States 24 1.6k 1.7× 1.4k 1.7× 734 1.8× 310 1.0× 318 1.2× 53 1.8k
Ziguang Ma China 13 506 0.6× 387 0.5× 275 0.7× 266 0.8× 436 1.6× 59 833
J. Novák Slovakia 16 552 0.6× 674 0.8× 315 0.8× 303 0.9× 296 1.1× 97 933
Clemens Ostermaier Austria 17 968 1.1× 938 1.1× 440 1.1× 219 0.7× 163 0.6× 58 1.1k
E. Kohn Germany 14 761 0.8× 652 0.8× 298 0.7× 310 1.0× 178 0.7× 39 943
Zenji Yatabe Japan 16 893 1.0× 846 1.0× 572 1.4× 162 0.5× 309 1.1× 49 1.1k
Shinya Ootomo Japan 17 1.2k 1.3× 1.0k 1.2× 649 1.6× 201 0.6× 255 0.9× 28 1.3k

Countries citing papers authored by Junji Kotani

Since Specialization
Citations

This map shows the geographic impact of Junji Kotani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Junji Kotani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Junji Kotani more than expected).

Fields of papers citing papers by Junji Kotani

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Junji Kotani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Junji Kotani. The network helps show where Junji Kotani may publish in the future.

Co-authorship network of co-authors of Junji Kotani

This figure shows the co-authorship network connecting the top 25 collaborators of Junji Kotani. A scholar is included among the top collaborators of Junji Kotani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Junji Kotani. Junji Kotani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kotani, Junji, Kozo Makiyama, Toshihiro Ohki, et al.. (2023). High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers. Electronics Letters. 59(4). 5 indexed citations
2.
Yamada, Atsushi, et al.. (2022). Enhancement of two-dimensional electron gas mobility using strain reduced AlGaN barriers grown by metalorganic vapor phase epitaxy under nitrogen atmosphere. Japanese Journal of Applied Physics. 61(7). 75505–75505. 1 indexed citations
3.
Yamada, Atsushi, et al.. (2021). Growth of microcrystalline diamond films after fabrication of GaN high-electron-mobility transistors for effective heat dissipation. Japanese Journal of Applied Physics. 60(7). 76502–76502. 18 indexed citations
4.
Fukuda, Koichi, et al.. (2021). Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures. IEEE Electron Device Letters. 42(11). 1592–1595. 8 indexed citations
5.
Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2020). Improved DC performance and current stability of ultrathin-Al 2 O 3 /InAlN/GaN MOS-HEMTs with post-metallization-annealing process. Semiconductor Science and Technology. 35(3). 35027–35027. 13 indexed citations
6.
Fukuda, Koichi, et al.. (2020). A Poisson–Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors. Japanese Journal of Applied Physics. 60(SB). SBBD04–SBBD04. 2 indexed citations
7.
Ozaki, Shiro, Atsushi Yamada, Toshihiro Ohki, et al.. (2020). Thermally stable and low trap density SiN x /AlON bi-layer structure for AlGaN/GaN MIS-HEMTs. Japanese Journal of Applied Physics. 59(4). 46505–46505. 6 indexed citations
8.
Minoura, Yuichi, Toshihiro Ohki, Atsushi Yamada, et al.. (2019). Surface Activated Bonding of SiC/Diamond for Thermal Management of High-Output Power GaN HEMTs. 2 indexed citations
9.
Minoura, Yuichi, Toshihiro Ohki, Naoya Okamoto, et al.. (2019). Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs. Japanese Journal of Applied Physics. 59(SG). SGGD03–SGGD03. 37 indexed citations
10.
Ohki, Toshihiro, Atsushi Yamada, Yuichi Minoura, et al.. (2018). An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader. IEEE Electron Device Letters. 40(2). 287–290. 68 indexed citations
11.
Kotani, Junji, T. Miyajima, Norikazu Nakamura, et al.. (2013). Tensile strain‐induced formation of micro‐cracks for AlGaN/GaN heterostructures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(5). 808–811. 8 indexed citations
12.
Jiao, Yuqing, B. W. Tilma, Junji Kotani, et al.. (2012). InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 17 µm. Optics Express. 20(4). 3675–3675. 9 indexed citations
13.
Tilma, B. W., Yuqing Jiao, Junji Kotani, et al.. (2011). Integrated Tunable Quantum-Dot Laser for Optical Coherence Tomography in the 1.7 <formula formulatype="inline"><tex Notation="TeX">$\mu{\rm m}$</tex></formula> Wavelength Region. IEEE Journal of Quantum Electronics. 48(2). 87–98. 32 indexed citations
14.
Tilma, B. W., E.A.J.M. Bente, R. Nötzel, et al.. (2009). Integrated tunable optical filters on InP for continuously tunable lasers. TU/e Research Portal. 430–431. 2 indexed citations
15.
Kotani, Junji, et al.. (2009). Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors. Japanese Journal of Applied Physics. 48(2R). 20203–20203. 58 indexed citations
16.
Kotani, Junji, P. J. van Veldhoven, T. de Vries, et al.. (2009). First demonstration of single-layer InAs/InP (100) quantum-dot laser: continuous wave, room temperature, ground state. Electronics Letters. 45(25). 1317–1318. 12 indexed citations
17.
18.
Kotani, Junji, Seiya Kasai, Tamotsu Hashizume, & Hideki Hasegawa. (2005). Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(4). 1799–1807. 16 indexed citations
19.
Kotani, Junji, Hideki Hasegawa, & Tamotsu Hashizume. (2004). Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model. Applied Surface Science. 237(1-4). 213–218. 12 indexed citations
20.
Kotani, Junji, Tamotsu Hashizume, & Hideki Hasegawa. (2004). Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(4). 2179–2189. 69 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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