You-Ru Lin

432 total citations
27 papers, 259 citations indexed

About

You-Ru Lin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, You-Ru Lin has authored 27 papers receiving a total of 259 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 4 papers in Biomedical Engineering. Recurrent topics in You-Ru Lin's work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Semiconductor Quantum Structures and Devices (10 papers). You-Ru Lin is often cited by papers focused on Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Semiconductor Quantum Structures and Devices (10 papers). You-Ru Lin collaborates with scholars based in Taiwan, Singapore and United States. You-Ru Lin's co-authors include Chih-Hsin Ko, C. Wann, Yee‐Chia Yeo, Xiao Gong, Qian Zhou, Xingui Zhang, D.L. Polla, T. Tamagawa, Po‐Wei Chen and Chih-Hao Cheng and has published in prestigious journals such as Nature, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

You-Ru Lin

25 papers receiving 249 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
You-Ru Lin Taiwan 10 222 111 47 46 20 27 259
D. Cohen-Elias Israel 11 313 1.4× 171 1.5× 70 1.5× 50 1.1× 27 1.4× 39 338
Kenneth Eng Kian Lee Singapore 13 353 1.6× 257 2.3× 71 1.5× 47 1.0× 10 0.5× 38 416
N. Lukyanchikova Ukraine 14 469 2.1× 99 0.9× 72 1.5× 45 1.0× 4 0.2× 66 509
M. G. Harvey United States 11 383 1.7× 283 2.5× 32 0.7× 22 0.5× 8 0.4× 24 407
T. Tamanuki Japan 14 502 2.3× 266 2.4× 45 1.0× 16 0.3× 43 2.1× 57 535
T. Ngai United States 11 407 1.8× 144 1.3× 40 0.9× 102 2.2× 42 2.1× 31 441
W. Vogt Switzerland 13 472 2.1× 164 1.5× 18 0.4× 41 0.9× 5 0.3× 42 506
C. S. Kyono United States 11 242 1.1× 229 2.1× 49 1.0× 44 1.0× 5 0.3× 29 326
M. Miyashita Japan 11 346 1.6× 151 1.4× 29 0.6× 23 0.5× 6 0.3× 52 364
Oluwamuyiwa Olubuyide United States 9 306 1.4× 109 1.0× 53 1.1× 36 0.8× 3 0.1× 20 319

Countries citing papers authored by You-Ru Lin

Since Specialization
Citations

This map shows the geographic impact of You-Ru Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by You-Ru Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites You-Ru Lin more than expected).

Fields of papers citing papers by You-Ru Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by You-Ru Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by You-Ru Lin. The network helps show where You-Ru Lin may publish in the future.

Co-authorship network of co-authors of You-Ru Lin

This figure shows the co-authorship network connecting the top 25 collaborators of You-Ru Lin. A scholar is included among the top collaborators of You-Ru Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with You-Ru Lin. You-Ru Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Na, Neil, et al.. (2024). Room temperature operation of germanium–silicon single-photon avalanche diode. Nature. 627(8003). 295–300. 33 indexed citations
2.
Chu, C. C., M. Mao, You-Ru Lin, & Hao-Hsiung Lin. (2020). A New Fitting Method for Ambipolar Diffusion Length Extraction in Thin Film Structures Using Photoluminescence Measurement with Scanning Excitation. Scientific Reports. 10(1). 3 indexed citations
3.
Lin, You-Ru, et al.. (2014). Low voltage high linearity ultra-wideband folded mixer for direct conversion receivers. Asia-Pacific Microwave Conference. 1040–1042.
4.
Gong, Xiao, Qian Zhou, Man Hon Samuel Owen, et al.. (2014). InAlP-Capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate. 9.4.1–9.4.4. 13 indexed citations
5.
Gong, Xiao, Ran Cheng, Pengfei Guo, et al.. (2013). High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications. National University of Singapore. 26.7.1–26.7.3. 9 indexed citations
6.
Lin, You-Ru, et al.. (2013). Characteristics of InAs/AlSb high electron mobility transistors grown on Si using a GaAsSb step-graded buffer layer. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(6). 61207–61207.
7.
Lee, Ling, Wu‐Ching Chou, Chih-Hsin Ko, et al.. (2012). Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence. Japanese Journal of Applied Physics. 51(6S). 06FG15–06FG15. 3 indexed citations
8.
Zhang, Xingui, Xiao Gong, Qian Zhou, et al.. (2011). In<inf>0.7</inf>Ga<inf>0.3</inf>As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process. National University of Singapore. 93. 1–2. 1 indexed citations
9.
Zhang, Xingui, Xiao Gong, Qian Zhou, et al.. (2011). Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization. Electrochemical and Solid-State Letters. 14(5). H212–H212. 26 indexed citations
10.
Ko, Chih-Hsin, et al.. (2011). Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors. Applied Physics Letters. 98(12). 16 indexed citations
11.
Lee, Ling, Wen‐Hao Chang, Wei‐Kuo Chen, et al.. (2010). Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si. Nanotechnology. 21(46). 465701–465701. 1 indexed citations
12.
Zhang, Xingui, Xiao Gong, Qian Zhou, et al.. (2010). In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain. Electrochemical and Solid-State Letters. 14(2). H60–H60. 37 indexed citations
13.
Gong, Xiao, Hock-Chun Chin, Zhu Zhu, et al.. (2010). Self-Aligned Gate-First In[sub 0.7]Ga[sub 0.3]As n-MOSFETs with an InP Capping Layer for Performance Enhancement. Electrochemical and Solid-State Letters. 14(3). H117–H117. 15 indexed citations
14.
Lin, You-Ru, et al.. (2009). GaAs 0.7 Sb 0.3 / GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer. Applied Physics Letters. 94(11). 2 indexed citations
15.
Lin, You-Ru, et al.. (2009). GaAs 0.7 Sb 0.3 /GaAs type-II quantum-well laser with adjacent InAs quantum-dot layer. Electronics Letters. 45(13). 682–683. 6 indexed citations
16.
Lin, You-Ru, et al.. (2008). Proceedings of the International Workshop on Combinatorial Algorithms 2007. Murdoch Research Repository (Murdoch University). 5 indexed citations
17.
Lin, You-Ru, et al.. (2006). The Concept and Technical Analysis on Cryogenic VSC-HVDC System. 1–7. 6 indexed citations
18.
Hu, Lingling, et al.. (2006). Statistical Modeling for Postcycling Data Retention of Split-Gate Flash Memories. IEEE Transactions on Device and Materials Reliability. 6(1). 60–66. 6 indexed citations
19.
Wang, Jiaxi, et al.. (2006). Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures. Nanotechnology. 18(1). 15401–15401. 13 indexed citations
20.
Rheenen, Arthur D. van, You-Ru Lin, S. Tehrani, C.-L. Chen, & F. W. Smith. (1993). Noise studies of HFETs on low temperature grown GaAs buffers and of MESFETs with low temperature grown GaAs passivation. Materials Science and Engineering B. 22(1). 82–85. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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