Ž. Gačević

777 total citations
38 papers, 611 citations indexed

About

Ž. Gačević is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ž. Gačević has authored 38 papers receiving a total of 611 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Condensed Matter Physics, 22 papers in Atomic and Molecular Physics, and Optics and 17 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ž. Gačević's work include GaN-based semiconductor devices and materials (32 papers), Semiconductor Quantum Structures and Devices (21 papers) and Ga2O3 and related materials (17 papers). Ž. Gačević is often cited by papers focused on GaN-based semiconductor devices and materials (32 papers), Semiconductor Quantum Structures and Devices (21 papers) and Ga2O3 and related materials (17 papers). Ž. Gačević collaborates with scholars based in Spain, Germany and Serbia. Ž. Gačević's co-authors include E. Calleja, Sergio Fernández‐Garrido, F. Peiró, Almudena Torres‐Pardo, J.M. González-Calbet, Sònia Estradé, Nenad Vukmirović, Alberto Eljarrat, Marcus Müller and Peter Veit and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Ž. Gačević

37 papers receiving 603 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ž. Gačević Spain 15 420 282 258 225 190 38 611
Jeomoh Kim United States 14 519 1.2× 245 0.9× 257 1.0× 216 1.0× 266 1.4× 27 690
Ting‐Wei Yeh United States 9 307 0.7× 321 1.1× 191 0.7× 230 1.0× 185 1.0× 13 602
Z. L. Xie China 14 412 1.0× 280 1.0× 142 0.6× 161 0.7× 259 1.4× 52 552
M. R. Gokhale India 15 301 0.7× 302 1.1× 317 1.2× 283 1.3× 182 1.0× 59 651
Aiqin Tian China 15 475 1.1× 138 0.5× 310 1.2× 213 0.9× 175 0.9× 53 582
Zabu Kyaw Singapore 18 670 1.6× 210 0.7× 336 1.3× 172 0.8× 361 1.9× 23 720
Shafat Jahangir United States 14 488 1.2× 292 1.0× 315 1.2× 215 1.0× 226 1.2× 35 678
Anand V. Sampath United States 13 469 1.1× 217 0.8× 149 0.6× 182 0.8× 297 1.6× 69 553
Tsung‐Ting Kao United States 15 552 1.3× 237 0.8× 222 0.9× 232 1.0× 284 1.5× 31 641

Countries citing papers authored by Ž. Gačević

Since Specialization
Citations

This map shows the geographic impact of Ž. Gačević's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ž. Gačević with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ž. Gačević more than expected).

Fields of papers citing papers by Ž. Gačević

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ž. Gačević. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ž. Gačević. The network helps show where Ž. Gačević may publish in the future.

Co-authorship network of co-authors of Ž. Gačević

This figure shows the co-authorship network connecting the top 25 collaborators of Ž. Gačević. A scholar is included among the top collaborators of Ž. Gačević based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ž. Gačević. Ž. Gačević is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fernández‐Garrido, Sergio, Ž. Gačević, & E. Calleja. (2024). A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy. arXiv (Cornell University).
2.
Dobrozhan, Oleksandr, Anatoliy Opanasyuk, Yu. P. Gnatenko, et al.. (2023). The effect of annealing treatment on the structural and optical properties of nanostructured CuxO films obtained by 3D printing. Materials Science in Semiconductor Processing. 161. 107472–107472. 20 indexed citations
3.
Gačević, Ž., J. Grandal, Qiang Guo, et al.. (2021). Structural and optical properties of self-assembled AlN nanowires grown on SiO 2 /Si substrates by molecular beam epitaxy. Nanotechnology. 32(19). 195601–195601. 5 indexed citations
4.
Sawicka, Marta, P. Wolny, Anna Feduniewicz‐Żmuda, et al.. (2020). Role of high nitrogen flux in InAlN growth by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth. 544. 125720–125720. 3 indexed citations
5.
Rajak, Piu, José Mánuel, Pavel Aseev, et al.. (2019). Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging. Nanoscale. 11(28). 13632–13638. 8 indexed citations
6.
Gačević, Ž., et al.. (2019). Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires. Nanoscale Research Letters. 14(1). 232–232. 5 indexed citations
7.
López‐Conesa, Lluís, José A. Pérez‐Omil, Ž. Gačević, et al.. (2018). Unvealing GaN Polytypism in Distributed GaN/InAlN Bragg Reflectors Through HRTEM Image Simulation. physica status solidi (a). 215(19). 1 indexed citations
8.
Gačević, Ž. & Nenad Vukmirović. (2018). Effective Refractive-Index Approximation: A Link between Structural and Optical Disorder of Planar Resonant Optical Structures. Physical Review Applied. 9(6). 6 indexed citations
9.
Mánuel, José, Pavel Aseev, Paul E. D. Soto Rodriguez, et al.. (2018). (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN. Journal of Alloys and Compounds. 783. 697–708. 5 indexed citations
10.
Gačević, Ž., Mark Holmes, Marcus Müller, et al.. (2017). Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires. ACS Photonics. 4(3). 657–664. 43 indexed citations
11.
Gačević, Ž., Nenad Vukmirović, Almudena Torres‐Pardo, et al.. (2016). Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires. Physical review. B.. 93(12). 15 indexed citations
12.
Eljarrat, Alberto, Lluís López‐Conesa, César Magén, et al.. (2016). Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS. Physical Chemistry Chemical Physics. 18(33). 23264–23276. 3 indexed citations
13.
Gačević, Ž., et al.. (2016). A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control. Applied Physics Letters. 108(3). 25 indexed citations
14.
Utrilla, A. D., J. M. Ulloa, Ž. Gačević, et al.. (2015). Impact of alloyed capping layers on the performance of InAs quantum dot solar cells. Solar Energy Materials and Solar Cells. 144. 128–135. 12 indexed citations
15.
Romero, M. F., et al.. (2014). Analysis of InAl(Ga)N/GaN wet-etching by structural, morphological and electrical methods. Semiconductor Science and Technology. 29(7). 75003–75003. 1 indexed citations
16.
Eljarrat, Alberto, Lluís López‐Conesa, César Magén, et al.. (2013). Insight into the Compositional and Structural Nano Features of AlN/GaN DBRs by EELS-HAADF. Microscopy and Microanalysis. 19(3). 698–705. 9 indexed citations
17.
Tadjer, Marko J., et al.. (2013). Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures. Semiconductor Science and Technology. 28(5). 55007–55007. 5 indexed citations
18.
Eljarrat, Alberto, Sònia Estradé, Ž. Gačević, et al.. (2012). Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence Electron Energy Loss Spectroscopy. Microscopy and Microanalysis. 18(5). 1143–1154. 18 indexed citations
19.
Gačević, Ž., Sergio Fernández‐Garrido, Davood Hosseini, et al.. (2010). InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 108(11). 20 indexed citations
20.
Gačević, Ž., Sergio Fernández‐Garrido, E. Calleja, E. Luna, & A. Trampert. (2009). Growth and characterization of lattice‐matched InAlN/GaN Bragg reflectors grown by plasma‐assisted molecular beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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