Yamina André

676 citations

46 papers · 539 indexed · h-index 14

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 24
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 15
Biomedical Engineering top 10%
- Nanowire Synthesis and Applications 21
Materials Chemistry
- ZnO doping and properties 16
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 9
Electrical and Electronic Engineering
- Semiconductor materials and devices 12
- Advancements in Semiconductor Devices and Circuit Design 10
Mechanics of Materials
- Metal and Thin Film Mechanics 5

Co-authors: Agnès Trassoudaine Dominique Castelluci Evelyne Gil Guillaume Monier Catherine Bougerol В. Г. Дубровский Kaddour Lekhal Mohammed Réda Ramdani
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Biomedical Engineering
Journals: Journal of Crystal Growth (10 papers)Nanotechnology (7 papers)Crystal Growth & Design (7 papers)
Partner nations: France Russia Canada

In The Last Decade

Yamina André

42 papers receiving 532 citations

Peers

Countries citing papers authored by Yamina André

Since Specialization

Citations

This map shows the geographic impact of Yamina André's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yamina André with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yamina André more than expected).

Fields of papers citing papers by Yamina André

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yamina André. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yamina André. The network helps show where Yamina André may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Yamina André, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yamina André Line = papers co-authored together Yamina André links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE Nanotechnology ·沈海燕,Kotaro ABE,Yamina André,Evelyne Gil,Chelsea Ragbir,Philip A. Shields,В. Г. Дубровский,Andréa Cattoni,Jean‐Christophe Harmand,Agnès Trassoudaine	2024	2
2	Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms ACS Applied Nano Materials ·Liadov Aa,В. Г. Дубровский,هيفاء بنت الحميدي الشمري,沈海燕,Kotaro ABE,Agnès Trassoudaine,owa,Ray LaPierre,Yamina André	2024	0
3	Spin precession of light holes in the spin-orbit field of strained GaAs nanowires Physical review. B. ·D. Paget,T. Amand,L. Florio,A. C. H. Rowe,Guillaume Monier,Evelyne Gil,Fabian Cadiz,Waqar Ali,Yamina André	2023	0
4	Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy Crystal Growth & Design ·Liadov Aa,В. Г. Дубровский,Shunsuke Takeguchi,Kotaro ABE,Naoki Kaneko,Heinz Schmid,Catherine Bougerol,Pierre‐Marie Coulon,Philip A. Shields,Agnès Trassoudaine,Evelyne Gil,Ray LaPierre,Yamina André	2023	4
5	Anomalous ambipolar transport in depleted GaAs nanowires Physical review. B. ·L. Florio,D. Paget,A. C. H. Rowe,Guillaume Monier,Khalid Lahlil,Evelyne Gil,Agnès Trassoudaine,Fabian Cadiz,Yamina André,C. Robert‐Goumet	2022	1
6	Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy Nanotechnology ·L. Florio,Klas Rudolfsson,O. Krischer,Evelyne Gil,Dominique Castelluci,В. Г. Дубровский,Catherine Bougerol,Yamina André,Agnès Trassoudaine	2021	1
7	Growth of long III-As NWs by hydride vapor phase epitaxy Nanotechnology ·Cheng Ma,Yamina André	2021	1
8	Formation of voids in selective area growth of InN nanorods in SiN _x on GaN templates Nano Futures ·Klas Rudolfsson,Yamina André,Kotaro ABE,O. Krischer,Catherine Bougerol,Pierre‐Marie Coulon,P. Ferret,Dominique Castelluci,Evelyne Gil,Philip A. Shields,В. Г. Дубровский,Agnès Trassoudaine	2020	4
9	Dynamics of Gold Droplet Formation on SiO₂/Si(111) Surface The Journal of Physical Chemistry C ·L. Florio,Frédéric Leroy,Guillaume Monier,Shunsuke Takeguchi,Evelyne Gil,Agnès Trassoudaine,В. Г. Дубровский,Dominique Castelluci,Nebile Işık Göktaş,Ray LaPierre,Yamina André,C. Robert‐Goumet	2020	19
10	Long catalyst-free InAs nanowires grown on silicon by HVPE CrystEngComm ·Shunsuke Takeguchi,Evelyne Gil,Klas Rudolfsson,Catherine Bougerol,L. Florio,Dominique Castelluci,В. Г. Дубровский,Agnès Trassoudaine,Nebile Işık Göktaş,Ray LaPierre,Yamina André	2020	4
11	Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation Nano Express ·Yamina André,Nebile Işık Göktaş,Guillaume Monier,L. Florio,Fahmeeda Naaz,Catherine Bougerol,L. Bideux,Agnès Trassoudaine,D. Paget,Е.Т. Колунин,Evelyne Gil,C. Robert‐Goumet,Ray LaPierre	2020	8
12	Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n-Type or p-Type? Nano Letters ·L. Florio,Guillaume Monier,Evelyne Gil,Agnès Trassoudaine,Catherine Bougerol,Christine Leroux,Irwana Wahab,C. Robert‐Goumet,Philip E. Hoggan,Yamina André,Nebile Işık Göktaş,Ray LaPierre,В. Г. Дубровский	2019	30
13	Compositional control of homogeneous InGaN nanowires with the In content up to 90% Nanotechnology ·Klas Rudolfsson,Kotaro ABE,Yamina André,Catherine Bougerol,Yoann Robin,P. Ferret,Dominique Castelluci,Evelyne Gil,В. Г. Дубровский,Hiroshi Amano,Agnès Trassoudaine	2018	13
14	Circumventing the miscibility gap in InGaN nanowires emitting from blue to red Nanotechnology ·E. Pissalouxx,Yamina André,Kotaro ABE,Catherine Bougerol,Dominique Castelluci,François Réveret,Cheng Ma,Nurni Wulandari,Е.Т. Колунин,Longyan Zhang,В. Г. Дубровский,Agnès Trassoudaine	2018	29
15	Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates The Journal of Physical Chemistry C ·L. Florio,В. Г. Дубровский,Guillaume Monier,Evelyne Gil,Christine Leroux,Kotaro ABE,Agnès Trassoudaine,Catherine Bougerol,Irwana Wahab,C. Robert‐Goumet,Yamina André	2018	15
16	Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy Nanotechnology ·Rutgens J Van den Berg,Yamina André,В. Г. Дубровский,Catherine Bougerol,Christine Leroux,Mohammed Réda Ramdani,Guillaume Monier,Agnès Trassoudaine,Dominique Castelluci,Evelyne Gil	2017	14
17	Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius Nano Letters ·owa,В. Г. Дубровский,Patricia Shearley,Yamina André,Christine Leroux,Kaddour Lekhal,Mehrshid Afrakhteh,Agnès Trassoudaine,Dominique Castelluci,Guillaume Monier,Mohammed Réda Ramdani,C. Robert‐Goumet,L. Bideux,Jean‐Christophe Harmand,Frank Glas	2014	74
18	Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE) Journal of Crystal Growth ·Evelyne Gil,Yamina André,Mohammed Réda Ramdani,C. Fontaine,Agnès Trassoudaine,Dominique Castelluci	2013	6
19	Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability Nanotechnology ·Kaddour Lekhal,Kotaro ABE,Yamina André,Agnès Trassoudaine,Evelyne Gil,C. Varenne,Catherine Bougerol,Guillaume Monier,Dominique Castelluci	2012	25
20	Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers Journal of Crystal Growth ·Yamina André,Agnès Trassoudaine,Danny Dowhal,R. Cadoret,Evelyne Gil,Dominique Castelluci,H.G. Park,P. Disseix	2007	37

About Yamina André

Yamina André is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Materials Chemistry and Biomedical Engineering, having authored 46 papers that have together received 539 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (24 papers), Nanowire Synthesis and Applications (21 papers), ZnO doping and properties (16 papers), Ga2O3 and related materials (15 papers), Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor Quantum Structures and Devices (9 papers) and Metal and Thin Film Mechanics (5 papers). The work is most often cited by research in Condensed Matter Physics (246 citations), Electronic, Optical and Magnetic Materials (164 citations), Biomedical Engineering (322 citations), Materials Chemistry (266 citations) and Atomic and Molecular Physics, and Optics (162 citations). Yamina André has collaborated with scholars based in France, Russia and Canada. Frequent co-authors include Agnès Trassoudaine, Dominique Castelluci, Evelyne Gil, Guillaume Monier, Catherine Bougerol, В. Г. Дубровский, Kaddour Lekhal, Mohammed Réda Ramdani, C. Robert‐Goumet and Christine Leroux. Their work appears in journals such as Journal of Crystal Growth, Nanotechnology, Crystal Growth & Design, Nano Letters and CrystEngComm.

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