S. Pérez

702 total citations
75 papers, 486 citations indexed

About

S. Pérez is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, S. Pérez has authored 75 papers receiving a total of 486 indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 55 papers in Atomic and Molecular Physics, and Optics and 28 papers in Condensed Matter Physics. Recurrent topics in S. Pérez's work include Semiconductor Quantum Structures and Devices (49 papers), GaN-based semiconductor devices and materials (28 papers) and Superconducting and THz Device Technology (27 papers). S. Pérez is often cited by papers focused on Semiconductor Quantum Structures and Devices (49 papers), GaN-based semiconductor devices and materials (28 papers) and Superconducting and THz Device Technology (27 papers). S. Pérez collaborates with scholars based in Spain, France and Italy. S. Pérez's co-authors include T. González, J. Mateos, I. Íñiguez-de-la-Torre, D. Pardo, P. Shiktorov, L. Varani, Diego Pardo, J. C. Vaissière, L. Reggiani and E. Starikov and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Pérez

68 papers receiving 475 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Pérez Spain 13 347 299 177 150 55 75 486
L. Varani France 15 452 1.3× 381 1.3× 88 0.5× 83 0.6× 54 1.0× 71 551
R.J.S. Pedersen Denmark 14 594 1.7× 256 0.9× 114 0.6× 56 0.4× 35 0.6× 69 752
Andrey Timofeev Finland 10 94 0.3× 167 0.6× 104 0.6× 117 0.8× 57 1.0× 19 323
M. Zaknoune France 16 774 2.2× 392 1.3× 89 0.5× 59 0.4× 38 0.7× 69 838
Daniel Bothner Germany 13 99 0.3× 404 1.4× 205 1.2× 30 0.2× 35 0.6× 31 509
M.J. Mondry United States 11 507 1.5× 421 1.4× 113 0.6× 86 0.6× 50 0.9× 27 595
Ali Bozbey Türkiye 10 159 0.5× 108 0.4× 132 0.7× 52 0.3× 66 1.2× 42 292
T. M. Shen United States 15 424 1.2× 310 1.0× 187 1.1× 190 1.3× 17 0.3× 34 598
A. Oosenbrug Switzerland 9 253 0.7× 218 0.7× 136 0.8× 27 0.2× 22 0.4× 18 345
J. Jasiński Poland 10 242 0.7× 122 0.4× 78 0.4× 26 0.2× 106 1.9× 56 384

Countries citing papers authored by S. Pérez

Since Specialization
Citations

This map shows the geographic impact of S. Pérez's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Pérez with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Pérez more than expected).

Fields of papers citing papers by S. Pérez

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Pérez. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Pérez. The network helps show where S. Pérez may publish in the future.

Co-authorship network of co-authors of S. Pérez

This figure shows the co-authorship network connecting the top 25 collaborators of S. Pérez. A scholar is included among the top collaborators of S. Pérez based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Pérez. S. Pérez is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mateos, J., et al.. (2025). Physical analysis of barrier-inhomogeneity effects on the electrical parameters of GaN Schottky barrier diodes. Journal of Physics D Applied Physics. 59(1). 15104–15104.
2.
Íñiguez-de-la-Torre, I., Yannick Roelens, M. Zaknoune, et al.. (2024). Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band. IEEE Transactions on Electron Devices. 71(8). 4524–4529. 3 indexed citations
3.
Pérez, S., I. Íñiguez-de-la-Torre, B. G. Vasallo, et al.. (2024). Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact. Journal of Physics D Applied Physics. 58(1). 15112–15112. 1 indexed citations
4.
Lesecq, Marie, K. Radhakrishnan, I. Íñiguez-de-la-Torre, et al.. (2023). On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes. IEEE Transactions on Electron Devices. 70(7). 3447–3453. 6 indexed citations
5.
Íñiguez-de-la-Torre, I., J. Mateos, S. Pérez, et al.. (2023). Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels. 1–4. 1 indexed citations
6.
Vasallo, B. G., S. Pérez, J. Mateos, et al.. (2022). Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples. Journal of Applied Physics. 132(4). 6 indexed citations
7.
Íñiguez-de-la-Torre, I., S. Pérez, Kumud Ranjan, et al.. (2021). Non-linear thermal resistance model for the simulation of high power GaN-based devices. Semiconductor Science and Technology. 36(5). 55002–55002. 10 indexed citations
8.
Mateos, J., Juan A. Delgado‐Notario, Yahya Moubarak Meziani, et al.. (2018). Voltage controlled sub-THz detection with gated planar asymmetric nanochannels. Applied Physics Letters. 113(4). 9 indexed citations
9.
Mateos, J., I. Íñiguez-de-la-Torre, S. Pérez, et al.. (2018). Planar Asymmetric Semiconductor Nanodiodes for THz Detection. 1–2.
10.
Pérez, S., Virginie Hoel, S. Rennesson, et al.. (2016). Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs. Semiconductor Science and Technology. 32(3). 35011–35011. 8 indexed citations
11.
Pardo, Diego, Jesús Grajal, & S. Pérez. (2015). Electrical and Noise Modeling of GaAs Schottky Diode Mixers in the THz Band. IEEE Transactions on Terahertz Science and Technology. 6(1). 69–82. 8 indexed citations
12.
Pérez, S., J. Mateos, & T. González. (2011). Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability. Acta Physica Polonica A. 119(2). 111–113. 5 indexed citations
13.
Pardo, Diego, Jesús Grajal, S. Pérez, J. Mateos, & T. González. (2011). Static and large signal noise analysis in GaAs and GaN Schottky diodes for high frequency applications. 1–4. 1 indexed citations
14.
Pardo, Diego, et al.. (2010). Harmonic Generation and Noise in GaAs and GaN Schottky Diodes. Softwaretechnik-Trends. 400–403. 2 indexed citations
15.
16.
Mateos, J., S. Pérez, D. Pardo, & T. González. (2009). Monte Carlo analysis of thermal effects in GaN HEMTs. 459–462. 5 indexed citations
17.
Mateos, J., S. Pérez, I. Íñiguez-de-la-Torre, D. Pardo, & T. González. (2007). Monte Carlo simulation of AlGaN/GaN heterostructures. 84–87. 1 indexed citations
18.
Varani, L., C. Palermo, J.‐F. Millithaler, et al.. (2006). Numerical modeling of TeraHertz electronic devices. Journal of Computational Electronics. 5(2-3). 71–77. 8 indexed citations
19.
Pérez, S., T. González, P. Shiktorov, et al.. (2004). Noise in Schottky-barrier diodes: from static to large-signal operation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5470. 322–322. 8 indexed citations
20.
Pérez, S., et al.. (1998). Extremely low noise InGaP/GaAsHBT oscillator at C-band. Electronics Letters. 34(8). 813–814. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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