Tejas Krishnamohan

3.3k total citations
58 papers, 2.6k citations indexed

About

Tejas Krishnamohan is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tejas Krishnamohan has authored 58 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 27 papers in Biomedical Engineering and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Tejas Krishnamohan's work include Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers) and Nanowire Synthesis and Applications (26 papers). Tejas Krishnamohan is often cited by papers focused on Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers) and Nanowire Synthesis and Applications (26 papers). Tejas Krishnamohan collaborates with scholars based in United States, Germany and Japan. Tejas Krishnamohan's co-authors include Krishna C. Saraswat, Donghyun Kim, Duygu Kuzum, Shyam Raghunathan, Abhijit Pethe, Paul C. McIntyre, Chi On Chui, Yoshio Nishi, H.‐S. Philip Wong and Ken Uchida and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Tejas Krishnamohan

57 papers receiving 2.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tejas Krishnamohan United States 23 2.5k 851 619 565 51 58 2.6k
Tsu-Jae King United States 23 2.5k 1.0× 449 0.5× 359 0.6× 335 0.6× 64 1.3× 48 2.6k
J. Kavalieros United States 27 3.3k 1.3× 973 1.1× 547 0.9× 688 1.2× 88 1.7× 41 3.6k
K. Rim United States 16 1.5k 0.6× 382 0.4× 281 0.5× 367 0.6× 47 0.9× 41 1.7k
Chris Breslin United States 15 1.0k 0.4× 588 0.7× 363 0.6× 701 1.2× 115 2.3× 22 1.4k
M. Doczy United States 16 2.1k 0.8× 672 0.8× 404 0.7× 477 0.8× 103 2.0× 22 2.3k
S. Biesemans Belgium 28 2.4k 1.0× 326 0.4× 736 1.2× 278 0.5× 69 1.4× 171 2.5k
Aryan Afzalian Belgium 22 4.2k 1.7× 1.7k 2.1× 370 0.6× 370 0.7× 33 0.6× 104 4.5k
Nima Dehdashti Akhavan Ireland 25 5.6k 2.2× 2.1k 2.5× 510 0.8× 327 0.6× 44 0.9× 94 5.7k
Philippe Matagne Belgium 18 937 0.4× 334 0.4× 350 0.6× 417 0.7× 50 1.0× 73 1.3k
Meishoku Masahara Japan 25 2.4k 1.0× 371 0.4× 200 0.3× 204 0.4× 53 1.0× 232 2.5k

Countries citing papers authored by Tejas Krishnamohan

Since Specialization
Citations

This map shows the geographic impact of Tejas Krishnamohan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tejas Krishnamohan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tejas Krishnamohan more than expected).

Fields of papers citing papers by Tejas Krishnamohan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tejas Krishnamohan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tejas Krishnamohan. The network helps show where Tejas Krishnamohan may publish in the future.

Co-authorship network of co-authors of Tejas Krishnamohan

This figure shows the co-authorship network connecting the top 25 collaborators of Tejas Krishnamohan. A scholar is included among the top collaborators of Tejas Krishnamohan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tejas Krishnamohan. Tejas Krishnamohan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kuzum, Duygu, Tejas Krishnamohan, Aneesh Nainani, et al.. (2010). High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms. IEEE Transactions on Electron Devices. 58(1). 59–66. 85 indexed citations
2.
Kuzum, Duygu, Tejas Krishnamohan, Aneesh Nainani, et al.. (2009). Experimental demonstration of high mobility Ge NMOS. 25. 1–4. 47 indexed citations
3.
Nainani, Aneesh, Shyam Raghunathan, Masaharu Kobayashi, et al.. (2009). Engineering of strained III–V heterostructures for high hole mobility. 10. 1–4. 16 indexed citations
4.
Liu, Haitao, et al.. (2009). 3D Simulation Study of Cell-Cell Interference in Advanced NAND Flash Memory. 1–3. 16 indexed citations
5.
Adhikari, Hemant, H. R. Harris, Casey Smith, et al.. (2009). High mobility SiGe shell-Si core omega gate pFETS. 136–138. 2 indexed citations
6.
Krishnamohan, Tejas, Donghyun Kim, Shyam Raghunathan, & Krishna C. Saraswat. (2008). Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope. 1–3. 395 indexed citations
8.
Kuzum, Duygu, Tejas Krishnamohan, Abhijit Pethe, et al.. (2008). Ge Interface Passivation Techniques and Their Thermal Stability. ECS Transactions. 16(10). 1025–1029. 4 indexed citations
9.
Krishnamohan, Tejas, Anh-Tuan Pham, Christoph Jungemann, B. Meinerzhagen, & Krishna C. Saraswat. (2008). Mobilty Modeling in Ultra-Thin (UT) Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs. ECS Meeting Abstracts. MA2008-02(37). 2423–2423. 4 indexed citations
10.
Krishnamohan, Tejas & Krishna C. Saraswat. (2008). High mobility Ge and III–V materials and novel device structures for high performance nanoscale MOSFETS. 89. 38–46. 6 indexed citations
11.
Saraswat, Krishna C., Dong‐Hyun Kim, Tejas Krishnamohan, et al.. (2008). Germanium for High Performance MOSFETs and Optical Interconnects. ECS Transactions. 16(10). 3–12. 14 indexed citations
12.
Kuzum, Duygu, Abhijit Pethe, Tejas Krishnamohan, et al.. (2007). Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility. 723–726. 43 indexed citations
13.
Hazeghi, Arash, Tejas Krishnamohan, & H.‐S. Philip Wong. (2007). Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling. IEEE Transactions on Electron Devices. 54(3). 439–445. 46 indexed citations
14.
Krishnamohan, Tejas, Christoph Jungemann, Donghyun Kim, et al.. (2006). Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs. 1–4. 10 indexed citations
15.
Saraswat, Krishna C., Chi On Chui, Tejas Krishnamohan, et al.. (2006). High performance germanium MOSFETs. Materials Science and Engineering B. 135(3). 242–249. 120 indexed citations
16.
Pethe, Abhijit, Tejas Krishnamohan, DongHyun Kim, et al.. (2006). Investigation of the Performance Limits of III-V Double-Gate n-MOSFETs. 47–50. 16 indexed citations
17.
Saraswat, Krishna C., Chi On Chui, Pawan Kapur, et al.. (2006). PERFORMANCE LIMITATIONS OF Si CMOS AND ALTERNATIVES FOR NANOELECTRONICS. International Journal of High Speed Electronics and Systems. 16(1). 175–192. 2 indexed citations
18.
Krishnamohan, Tejas, Donghyun Kim, Yoshio Nishi, Krishna C. Saraswat, & Christoph Jungemann. (2006). High Performance, Ultra-thin, Strained-Ge, Heterostructure FETs With High Mobility And Low Leakage. ECS Transactions. 3(7). 687–695. 3 indexed citations
19.
Krishnamohan, Tejas, Zoran Krivokapić, & Krishna C. Saraswat. (2003). A novel sub-20 nm depletion-mode double-gate (DMDG) FET. 85. 243–246. 1 indexed citations
20.
Krishnamohan, Tejas, et al.. (2002). A model for crystal growth during metal induced lateral crystallization of amorphous silicon. Journal of Applied Physics. 93(1). 175–181. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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