T. Arikado

1.7k total citations
80 papers, 1.4k citations indexed

About

T. Arikado is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Arikado has authored 80 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Arikado's work include Semiconductor materials and devices (63 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Integrated Circuits and Semiconductor Failure Analysis (18 papers). T. Arikado is often cited by papers focused on Semiconductor materials and devices (63 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Integrated Circuits and Semiconductor Failure Analysis (18 papers). T. Arikado collaborates with scholars based in Japan, Canada and Taiwan. T. Arikado's co-authors include Hideo Tamura, Chiaki Iwakura, Kazuyoshi Torii, Hiroshi Kitajima, Toyohiro Chikyow, Kenji Shiraishi, Y. Akasaka, H. Okano, Satoshi Kamiyama and K. Suguro and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

T. Arikado

75 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Arikado Japan 21 1.2k 393 153 139 130 80 1.4k
Takeyasu Saito Japan 16 612 0.5× 535 1.4× 130 0.8× 168 1.2× 77 0.6× 99 864
Ashvani Kumar India 14 432 0.4× 591 1.5× 152 1.0× 31 0.2× 238 1.8× 25 901
F. Bouamrane France 12 311 0.3× 245 0.6× 83 0.5× 126 0.9× 153 1.2× 23 571
Edmund P. Burte Germany 16 812 0.7× 346 0.9× 144 0.9× 154 1.1× 92 0.7× 132 971
C. M. Ng Singapore 18 640 0.5× 497 1.3× 124 0.8× 103 0.7× 83 0.6× 76 997
Zhouling Wu United States 15 410 0.3× 274 0.7× 79 0.5× 72 0.5× 239 1.8× 76 877
Junwu Liang China 19 685 0.6× 718 1.8× 278 1.8× 237 1.7× 207 1.6× 67 1.2k
A. Guittoum Algeria 16 324 0.3× 305 0.8× 256 1.7× 241 1.7× 66 0.5× 69 750
R. Peat United Kingdom 16 408 0.3× 355 0.9× 40 0.3× 176 1.3× 102 0.8× 42 820
Ahmad Shuhaimi Abu Bakar Malaysia 19 602 0.5× 810 2.1× 334 2.2× 206 1.5× 308 2.4× 122 1.3k

Countries citing papers authored by T. Arikado

Since Specialization
Citations

This map shows the geographic impact of T. Arikado's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Arikado with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Arikado more than expected).

Fields of papers citing papers by T. Arikado

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Arikado. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Arikado. The network helps show where T. Arikado may publish in the future.

Co-authorship network of co-authors of T. Arikado

This figure shows the co-authorship network connecting the top 25 collaborators of T. Arikado. A scholar is included among the top collaborators of T. Arikado based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Arikado. T. Arikado is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Oh, Jungwoo, Prashant Majhi, Chang Yong Kang, et al.. (2009). High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-k Dielectric and Metal Gate. Japanese Journal of Applied Physics. 48(4S). 04C055–04C055. 3 indexed citations
2.
3.
Cheng, Chao-Ching, Han Pan, Chaoyi Huang, et al.. (2008). Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode. IEEE Electron Device Letters. 29(10). 1105–1107. 17 indexed citations
4.
Cheng, Chao-Ching, W.J. Chen, C. P. Chou, et al.. (2008). High Density and Low Leakage Current in $ \hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{\circ} \hbox{C}$. IEEE Electron Device Letters. 29(8). 845–847. 62 indexed citations
5.
Kamiyama, Satoshi, et al.. (2005). Electrical properties of 0.5 nm thick Hf-silicate top-layer∕HfO2 gate dielectrics by atomic layer deposition. Applied Physics Letters. 86(22). 19 indexed citations
6.
Uedono, Akira, Masakazu Goto, Kenji Shiraishi, et al.. (2004). Characterization of Hf0.3Al0.7OxFabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams. Japanese Journal of Applied Physics. 43(11B). 7848–7852. 6 indexed citations
7.
Nakagawa, Y., et al.. (2004). Evaluation of Transistor Property Variations Within Chips on 300-mm Wafers Using a New MOSFET Array Test Structure. IEEE Transactions on Semiconductor Manufacturing. 17(3). 248–254. 30 indexed citations
8.
Arikado, T., et al.. (2004). Preparation of Hf-Si-O Thin Films by Simultaneous Deposition and Reaction Process using Pulsed Ion-Beam Evaporation. IEEJ Transactions on Fundamentals and Materials. 124(3). 255–259. 1 indexed citations
9.
Aoyama, Tadayoshi, Satoshi Kamiyama, T. Sasaki, et al.. (2003). In-situ HfSiON/SiO<sub>2</sub> gate dielectric fabrication using hot wall batch system. 174–179. 12 indexed citations
10.
Kamiyama, Satoshi, Atsushi Horiuchi, Tatsuro Maeda, et al.. (2003). Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation. 42–46. 8 indexed citations
11.
Arikado, T., et al.. (2002). Agile fab concepts for cost effective and QTAT mini fab. 7–10. 6 indexed citations
12.
13.
Yagishita, A., Tomohiro Saito, K. Nakajima, et al.. (2000). High performance damascene metal gate MOSFETs for 0.1 μm regime. IEEE Transactions on Electron Devices. 47(5). 1028–1034. 27 indexed citations
14.
Inumiya, Seiji, Atsushi Yagishita, Tomohiro Saito, et al.. (2000). Sub-1.3 nm Amorphous Tantalum Pentoxide Gate Dielectrics for Damascene Metal Gate Transistors. Japanese Journal of Applied Physics. 39(4S). 2087–2087. 8 indexed citations
15.
Yagishita, Atsushi, Seiji Inumiya, Y. Akasaka, et al.. (1999). Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1 µm MOSFETs. Japanese Journal of Applied Physics. 38(4S). 2227–2227. 3 indexed citations
16.
Hieda, K., Kazuhiro Eguchi, Noburu Fukushima, et al.. (1998). All perovskite capacitor (APEC) technology for (Ba,Sr)TiO/sub 3/ capacitor scaling toward 0.10 /spl mu/m stacked DRAMs. 807–810. 1 indexed citations
17.
Saito, Tomohiro, Atsushi Yagishita, Seiji Inumiya, et al.. (1998). Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs. 1 indexed citations
18.
Arikado, T. & Yasuhiro Horiike. (1983). Si and SiO2 Etching under Low Self-Bias Voltage. Japanese Journal of Applied Physics. 22(5R). 799–799. 7 indexed citations
19.
Arikado, T., Chiaki Iwakura, & Hideo Tamura. (1977). Chlorine evolution reaction on platinum and several alloys. Electrochimica Acta. 22(3). 229–232. 5 indexed citations
20.
Arikado, T., Chiaki Iwakura, Hiroshi Yoneyama, & Hideo Tamura. (1976). The anodic polarization characteristics of the graphite in alkaline solution. Electrochimica Acta. 21(8). 551–555. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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