J. Camassel

5.1k total citations · 1 hit paper
175 papers, 4.3k citations indexed

About

J. Camassel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Camassel has authored 175 papers receiving a total of 4.3k indexed citations (citations by other indexed papers that have themselves been cited), including 130 papers in Electrical and Electronic Engineering, 92 papers in Atomic and Molecular Physics, and Optics and 63 papers in Materials Chemistry. Recurrent topics in J. Camassel's work include Semiconductor Quantum Structures and Devices (62 papers), Silicon Carbide Semiconductor Technologies (53 papers) and Semiconductor materials and devices (45 papers). J. Camassel is often cited by papers focused on Semiconductor Quantum Structures and Devices (62 papers), Silicon Carbide Semiconductor Technologies (53 papers) and Semiconductor materials and devices (45 papers). J. Camassel collaborates with scholars based in France, Spain and United States. J. Camassel's co-authors include H. Mathieu, J. Pascual, D. Auvergne, P. Merle, A. Chévy, W. Knap, Sandrine Juillaguet, A. Gouskov, T. Suski and Jean‐Marie Bluet and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. Camassel

171 papers receiving 4.1k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Fine structure in the intrinsic absorption edge of TiO2

1978 428 citations J. Pascual, J. Camassel et al. Physical review. B, Condensed matter profile →

Peers

Countries citing papers authored by J. Camassel

Since Specialization

Citations

This map shows the geographic impact of J. Camassel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Camassel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Camassel more than expected).

Fields of papers citing papers by J. Camassel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Camassel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Camassel. The network helps show where J. Camassel may publish in the future.

Co-authorship network of co-authors of J. Camassel

This figure shows the co-authorship network connecting the top 25 collaborators of J. Camassel. A scholar is included among the top collaborators of J. Camassel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Camassel. J. Camassel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity 2009 ·Materials science forum ·(unknown), Sandrine Juillaguet, Hervé Peyre, J. Camassel, Peter J. Wellmann	1
2	Quantitative analysis of the lattice reconstruction of ion-implanted SiC after visible light laser irradiation 2009 ·Journal of Applied Physics ·D. J. Brink, Hervé Peyre, J. Camassel	3
3	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 2004 ·(unknown), R. Madar, J. Camassel, E. Blanquet	2
4	Formation of a surface SiC layer by carbon-ion implantation into silicon 2003 ·Thin Solid Films ·D. J. Brink, J. Camassel, J.B. Malherbe	17
5	From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy 2000 ·Applied Physics Letters ·Peter J. Klar, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz, (unknown), J. Camassel	158
6	Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells 1997 ·MRS Internet Journal of Nitride Semiconductor Research ·J. Allègre, Pierre Lefèbvre, Sandrine Juillaguet, W. Knap, J. Camassel, Q. Chen, M. Asif Khan	8
7	Edge-on micro-Raman assessment of trigonal modes in partially ordered GaInP2 1996 ·Physical review. B, Condensed matter ·N. Mestres, F. Alsina, J. Pascual, Jean‐Marie Bluet, J. Camassel, C. Geng, F. Scholz	16
8	The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface 1996 ·Solid State Communications ·W. Knap, (unknown), Jean‐Marie Bluet, J. Camassel, Jeffrey F. Young, M. Asif Khan, (unknown), S. Huant, M. S. Shur	43
9	Carbonization of Si surfaces by solid source molecular beam epitaxy 1995 ·Materials Science and Engineering B ·Konstantinos Zekentes, (unknown), K. Tsagaraki, B. Sagnes, (unknown), (unknown), J. Camassel	7
10	Lattice dynamics of CdGeAs₂ 1990 ·Physica Scripta ·Jaume Pujol, L. Artús, J. Pascual, J. Camassel	9
11	Indium-doped GaAs: Investigation of deep traps 1989 ·Physical review. B, Condensed matter ·J.P. Laurenti, K. Wolter, P. Roentgen, K. Seibert, H. Kurz, J. Camassel	4
12	Indium-doped GaAs: A very dilute alloy system 1988 ·Physical review. B, Condensed matter ·J.P. Laurenti, P. Roentgen, K. Wolter, K. Seibert, H. Kurz, J. Camassel	19
13	Stress effects on excitons bound to neutral acceptors in InP 1984 ·Physical review. B, Condensed matter ·H. Mathieu, J. Camassel, (unknown)	23
14	Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe 1982 ·Progress in Crystal Growth and Characterization ·A. Gouskov, J. Camassel, L. Gouskov	104
15	Uniaxial-stress dependence of the first-order Raman spectrum of rutile. II. Model calculation 1980 ·Physical review. B, Condensed matter ·J. Pascual, J. Camassel, P. Merle, H. Mathieu	11
16	Deformation potentials of the fundamental exciton spectrum of InP 1980 ·Physical review. B, Condensed matter ·J. Camassel, P. Merle, (unknown), H. Mathieu	20
17	Deformation potentials of the direct and indirect absorption edges of GaP 1979 ·Physical review. B, Condensed matter ·H. Mathieu, P. Merle, E.L. Ameziane, (unknown), J. Camassel, G. Poiblaud	76
18	Excitonic absorption edge of indium selenide 1978 ·Physical review. B, Condensed matter ·J. Camassel, P. Merle, H. Mathieu, A. Chévy	206
19	Resolved Quadrupolar Transition in TiO2 1977 ·Physical Review Letters ·J. Pascual, J. Camassel, H. Mathieu	153
20	Electro magneto reflexion du germanium a 1,5°K 1969 ·Solid State Communications ·M. Rouzeyre, H. Mathieu, D. Auvergne, J. Camassel	9

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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