J. Massies

1.2k total citations
36 papers, 964 citations indexed

About

J. Massies is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, J. Massies has authored 36 papers receiving a total of 964 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 21 papers in Atomic and Molecular Physics, and Optics and 21 papers in Electrical and Electronic Engineering. Recurrent topics in J. Massies's work include GaN-based semiconductor devices and materials (22 papers), Semiconductor Quantum Structures and Devices (17 papers) and Semiconductor materials and devices (12 papers). J. Massies is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Semiconductor Quantum Structures and Devices (17 papers) and Semiconductor materials and devices (12 papers). J. Massies collaborates with scholars based in France, United Kingdom and Germany. J. Massies's co-authors include N. Grandjean, Pierre Lefèbvre, Bernard Gil, M. Laügt, Pierre Bigenwald, Marcel Leroux, M. Sauvage-Simkin, N. Jedrecy, R. Pinchaux and V. H. Etgens and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Physical Review B.

In The Last Decade

J. Massies

36 papers receiving 939 citations

Peers

J. Massies

CMP

AMPO

EEE

EOMM

M. Baeumler Germany

Shigehiko Hasegawa Japan

Hisao Saito Japan

P. Specht United States

E. R. Weber United States

Chiaki Sasaoka Japan

T. Wosiński Poland

K. H. Bachem Germany

Sohachi Iwai Japan

Kathryn M. Kelchner United States

M. Baeumler Germany

J. Massies

490 ×0.9

CMP

495 ×0.9

AMPO

585 ×1.6

EEE

377 ×1.1

247 ×0.9

EOMM

Citations per year, relative to J. Massies J. Massies (= 1×) peers M. Baeumler

Countries citing papers authored by J. Massies

Since Specialization

Citations

This map shows the geographic impact of J. Massies's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Massies with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Massies more than expected).

Fields of papers citing papers by J. Massies

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Massies. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Massies. The network helps show where J. Massies may publish in the future.

Co-authorship network of co-authors of J. Massies

This figure shows the co-authorship network connecting the top 25 collaborators of J. Massies. A scholar is included among the top collaborators of J. Massies based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Massies. J. Massies is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Rosales, Daniel, Bernard Gil, J. Brault, et al.. (2013). Excitons in nitride heterostructures: From zero- to one-dimensional behavior. Physical Review B. 88(12). 48 indexed citations

Lo, Fang-Yuh, V. Ney, A. Ney, et al.. (2011). Structural, optical, and magnetic properties of Ho-implanted GaN thin films. Journal of Physics Conference Series. 266. 12097–12097. 1 indexed citations

Cordier, Y., M. Azize, N. Baron, et al.. (2007). AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination. Journal of Crystal Growth. 309(1). 1–7. 26 indexed citations

Marcadet, X., et al.. (2007). In As ∕ Al As Sb based quantum cascade lasers. Applied Physics Letters. 91(16). 14 indexed citations

Renard, Charles, X. Marcadet, & J. Massies. (2006). On the determination of the structural parameters of GaxIn1−xAs/AlAsySb1−y superlattices by X-ray diffraction. Journal of Crystal Growth. 297(2). 272–278. 2 indexed citations

Renard, Charles, X. Marcadet, J. Massies, & O. Parillaud. (2005). Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates. Journal of Crystal Growth. 278(1-4). 193–197. 7 indexed citations

Joblot, S., F. Sèmond, F. Natali, et al.. (2005). Growth of wurtzite‐GaN on silicon (100) substrate by molecular beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2187–2190. 11 indexed citations

Lefèbvre, Pierre, Sokratis Kalliakos, T. Bretagnon, et al.. (2004). Observation and modeling of the time-dependent descreening of internal electric field in a wurtziteGaN/Al0.15Ga0.85Nquantum well after high photoexcitation. Physical Review B. 69(3). 53 indexed citations

Gleize, J., F. Demangeot, J. Frandon, et al.. (2001). Micro-Raman Study of Wurtzite AlN Layers Grown on Si(111). physica status solidi (a). 188(2). 511–514. 13 indexed citations

10.

Gallart, Mathieu, T. Taliercio, Pierre Lefèbvre, et al.. (2000). Time-Resolved Spectroscopy of MBE-Grown Nitride Based Heterostructures. physica status solidi (a). 178(1). 101–105. 2 indexed citations

11.

Mihailovic, M., J. Leymarie, A. Vasson, et al.. (1999). Temperature Dependence of Hexagonal-GaN Optical Properties below the Bandgap. physica status solidi (b). 216(1). 73–77. 5 indexed citations

12.

Leroux, M., N. Grandjean, B. Beaumont, et al.. (1999). Temperature Dependence of Photoluminescence Intensities of Undoped and Doped GaN. physica status solidi (b). 216(1). 605–608. 10 indexed citations

13.

Gil, B., et al.. (1999). Photoreflectance spectroscopy as a powerful tool for the investigation of GaN–AlGaN quantum well structures. Solid State Communications. 109(9). 567–571. 7 indexed citations

14.

Massies, J., P. Vennéguès, M. Laügt, M. Leroux, & N. Grandjean. (1997). Effect of the nitridation of the sapphire (0001) substrate on the GaN growth. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 449. 67–72. 1 indexed citations

15.

Deparis, C., et al.. (1994). AlxGa1−xAs/GaAs quantum well structures grown by metalorganic molecular beam epitaxy using dimethylethylamine alane. Applied Physics Letters. 65(7). 836–838. 3 indexed citations

16.

Etgens, V. H., R. Pinchaux, M. Sauvage-Simkin, et al.. (1992). Structural approach to II–VI/GaAs heterostructures: precursor states and strain accommodation in the early stages of MBE growth. Applied Surface Science. 56-58. 597–603. 10 indexed citations

17.

Etgens, V. H., R. Pinchaux, M. Sauvage-Simkin, et al.. (1991). Structural study of in situ grown Te/GaAs(001) interfaces by grazing incidence X-ray diffraction. Surface Science. 251-252. 478–482. 16 indexed citations

18.

Chatillon, Christian & J. Massies. (1991). Practical Aspects of Molecular Beam Epitaxy. Materials science forum. 59-60. 229–286. 5 indexed citations

19.

Freundlich, A., M. Leroux, J. C. Grenet, et al.. (1989). GaAs cells on Si substrates: A new challenge for space photovoltaic applications. ESASP. 2. 495–499. 1 indexed citations

20.

Claverie, P., J. Massies, R. Pinchaux, et al.. (1989). Ultrahigh-vacuum four-circle diffractometer for grazing incidence x-ray diffraction on i n s i t u MBE grown III-V semiconductor surfaces. Review of Scientific Instruments. 60(7). 2369–2372. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact