J. Massies

1.2k total citations
36 papers, 964 citations indexed

About

J. Massies is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, J. Massies has authored 36 papers receiving a total of 964 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 21 papers in Atomic and Molecular Physics, and Optics and 21 papers in Electrical and Electronic Engineering. Recurrent topics in J. Massies's work include GaN-based semiconductor devices and materials (22 papers), Semiconductor Quantum Structures and Devices (17 papers) and Semiconductor materials and devices (12 papers). J. Massies is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Semiconductor Quantum Structures and Devices (17 papers) and Semiconductor materials and devices (12 papers). J. Massies collaborates with scholars based in France, United Kingdom and Germany. J. Massies's co-authors include N. Grandjean, Pierre Lefèbvre, Bernard Gil, M. Laügt, Pierre Bigenwald, Marcel Leroux, M. Sauvage-Simkin, N. Jedrecy, R. Pinchaux and V. H. Etgens and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Physical Review B.

In The Last Decade

J. Massies

36 papers receiving 939 citations

Peers

Countries citing papers authored by J. Massies

Since Specialization

Citations

This map shows the geographic impact of J. Massies's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Massies with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Massies more than expected).

Fields of papers citing papers by J. Massies

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Massies. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Massies. The network helps show where J. Massies may publish in the future.

Co-authorship network of co-authors of J. Massies

This figure shows the co-authorship network connecting the top 25 collaborators of J. Massies. A scholar is included among the top collaborators of J. Massies based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Massies. J. Massies is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Excitons in nitride heterostructures: From zero- to one-dimensional behavior 2013 ·Physical Review B ·Daniel Rosales, (unknown), Bernard Gil, (unknown), J. Brault, B. Damilano, J. Massies, M. V. Durnev, A. V. Kavokin	48
2	Structural, optical, and magnetic properties of Ho-implanted GaN thin films 2011 ·Journal of Physics Conference Series ·Fang-Yuh Lo, (unknown), V. Ney, A. Ney, Ming-Yau Chern, (unknown), Sébastien Pezzagna, D. Reuter, Andreas D. Wieck, J. Massies	1
3	AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination 2007 ·Journal of Crystal Growth ·Y. Cordier, M. Azize, N. Baron, Sébastien Chenot, O. Tottereau, J. Massies	26
4	In As ∕ Al As Sb based quantum cascade lasers 2007 ·Applied Physics Letters ·X. Marcadet, Charles Renard, (unknown), (unknown), J. Massies	14
5	On the determination of the structural parameters of GaxIn1−xAs/AlAsySb1−y superlattices by X-ray diffraction 2006 ·Journal of Crystal Growth ·Charles Renard, X. Marcadet, J. Massies	2
6	Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates 2005 ·Journal of Crystal Growth ·Charles Renard, X. Marcadet, J. Massies, O. Parillaud	7
7	Growth of wurtzite‐GaN on silicon (100) substrate by molecular beam epitaxy 2005 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·S. Joblot, F. Sèmond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier, J. Massies	11
8	Observation and modeling of the time-dependent descreening of internal electric field in a wurtziteGaN/Al0.15Ga0.85Nquantum well after high photoexcitation 2004 ·Physical Review B ·Pierre Lefèbvre, Sokratis Kalliakos, T. Bretagnon, (unknown), T. Taliercio, B. Gil, N. Grandjean, J. Massies	53
9	Micro-Raman Study of Wurtzite AlN Layers Grown on Si(111) 2001 ·physica status solidi (a) ·J. Gleize, F. Demangeot, J. Frandon, M. A. Renucci, Martin Kuball, F. Sèmond, J. Massies	13
10	Time-Resolved Spectroscopy of MBE-Grown Nitride Based Heterostructures 2000 ·physica status solidi (a) ·Mathieu Gallart, T. Taliercio, Pierre Lefèbvre, Bernard Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, P. Bigenwald	2
11	Temperature Dependence of Hexagonal-GaN Optical Properties below the Bandgap 1999 ·physica status solidi (b) ·(unknown), (unknown), M. Mihailovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies	5
12	Temperature Dependence of Photoluminescence Intensities of Undoped and Doped GaN 1999 ·physica status solidi (b) ·M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Sèmond, J. Massies, P. Gibart	10
13	Photoreflectance spectroscopy as a powerful tool for the investigation of GaN–AlGaN quantum well structures 1999 ·Solid State Communications ·(unknown), B. Gil, Pierre Lefèbvre, N. Grandjean, J. Massies, M. Leroux	7
14	Effect of the nitridation of the sapphire (0001) substrate on the GaN growth 1997 ·Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·J. Massies, P. Vennéguès, M. Laügt, M. Leroux, N. Grandjean	1
15	AlxGa1−xAs/GaAs quantum well structures grown by metalorganic molecular beam epitaxy using dimethylethylamine alane 1994 ·Applied Physics Letters ·(unknown), C. Deparis, J. Massies, M. Leroux, (unknown)	3
16	Structural approach to II–VI/GaAs heterostructures: precursor states and strain accommodation in the early stages of MBE growth 1992 ·Applied Surface Science ·V. H. Etgens, R. Pinchaux, M. Sauvage-Simkin, J. Massies, N. Jedrecy, (unknown), (unknown), S. Tatarenko	10
17	Structural study of in situ grown Te/GaAs(001) interfaces by grazing incidence X-ray diffraction 1991 ·Surface Science ·V. H. Etgens, R. Pinchaux, M. Sauvage-Simkin, J. Massies, N. Jedrecy, (unknown), S. Tatarenko	16
18	Practical Aspects of Molecular Beam Epitaxy 1991 ·Materials science forum ·Christian Chatillon, J. Massies	5
19	GaAs cells on Si substrates: A new challenge for space photovoltaic applications 1989 ·ESASP ·A. Freundlich, M. Leroux, J. C. Grenet, (unknown), G. Neu, A. Leycuras, J. Massies, P. Gibart, C. Vèrié	1
20	Ultrahigh-vacuum four-circle diffractometer for grazing incidence x-ray diffraction on i n s i t u MBE grown III-V semiconductor surfaces 1989 ·Review of Scientific Instruments ·P. Claverie, J. Massies, R. Pinchaux, M. Sauvage-Simkin, (unknown), Jacques Bonnet, N. Jedrecy	22

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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