T. Markurt

1.2k total citations
40 papers, 976 citations indexed

About

T. Markurt is a scholar working on Materials Chemistry, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, T. Markurt has authored 40 papers receiving a total of 976 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Materials Chemistry, 17 papers in Condensed Matter Physics and 16 papers in Electrical and Electronic Engineering. Recurrent topics in T. Markurt's work include GaN-based semiconductor devices and materials (17 papers), ZnO doping and properties (12 papers) and Ga2O3 and related materials (11 papers). T. Markurt is often cited by papers focused on GaN-based semiconductor devices and materials (17 papers), ZnO doping and properties (12 papers) and Ga2O3 and related materials (11 papers). T. Markurt collaborates with scholars based in Germany, Poland and France. T. Markurt's co-authors include M. Albrecht, Tobias Schulz, Robert Schewski, Zbigniew Galazka, T. Remmele, Oliver Bierwagen, Aimeric Courville, G. Wagner, M. Baldini and P. Drechsel and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. Markurt

40 papers receiving 954 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Markurt Germany 18 674 615 440 277 234 40 976
Emilio Nogales Spain 21 1.1k 1.7× 966 1.6× 379 0.9× 449 1.6× 432 1.8× 87 1.4k
Corinne Sartel France 17 753 1.1× 501 0.8× 269 0.6× 528 1.9× 166 0.7× 68 1.1k
Donald L. Dorsey United States 15 833 1.2× 604 1.0× 512 1.2× 498 1.8× 217 0.9× 43 1.2k
C. Durand France 8 370 0.5× 251 0.4× 434 1.0× 238 0.9× 88 0.4× 8 706
G. A. Seryogin United States 14 500 0.7× 476 0.8× 436 1.0× 304 1.1× 146 0.6× 20 815
Johannes Ledig Germany 15 467 0.7× 279 0.5× 459 1.0× 201 0.7× 59 0.3× 33 711
Cheng‐Tai Kuo United States 15 501 0.7× 415 0.7× 388 0.9× 299 1.1× 48 0.2× 35 879
С. А. Тарелкин Russia 17 667 1.0× 259 0.4× 134 0.3× 299 1.1× 96 0.4× 55 864
Darren B. Thomson United States 15 673 1.0× 566 0.9× 609 1.4× 397 1.4× 193 0.8× 56 1.1k

Countries citing papers authored by T. Markurt

Since Specialization
Citations

This map shows the geographic impact of T. Markurt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Markurt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Markurt more than expected).

Fields of papers citing papers by T. Markurt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Markurt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Markurt. The network helps show where T. Markurt may publish in the future.

Co-authorship network of co-authors of T. Markurt

This figure shows the co-authorship network connecting the top 25 collaborators of T. Markurt. A scholar is included among the top collaborators of T. Markurt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Markurt. T. Markurt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Markurt, T., Tobias Schulz, M. Albrecht, et al.. (2021). Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing. Journal of Applied Physics. 130(20). 17 indexed citations
2.
Schulz, Tobias, T. Markurt, Houari Amari, et al.. (2021). Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy. Scientific Reports. 11(1). 7497–7497. 10 indexed citations
3.
Prozheeva, Vera, Ilja Makkonen, Christo Guguschev, et al.. (2020). TiSr antisite: An abundant point defect in SrTiO3. Journal of Applied Physics. 127(24). 12 indexed citations
4.
Mazzolini, Piero, Andreas Falkenstein, Charlotte Wouters, et al.. (2020). Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE). APL Materials. 8(1). 105 indexed citations
5.
Wouters, Charlotte, Christopher Sutton, Luca M. Ghiringhelli, et al.. (2020). Investigating the ranges of (meta)stable phase formation in (InxGa1−x)2O3: Impact of the cation coordination. Physical Review Materials. 4(12). 16 indexed citations
6.
Schulz, Tobias, L. Lymperakis, M. Siekacz, et al.. (2020). Influence of strain on the indium incorporation in (0001) GaN. Physical Review Materials. 4(7). 12 indexed citations
7.
Wouters, Charlotte, T. Markurt, M. Albrecht, Enzo Rotunno, & Vincenzo Grillo. (2019). Influence of 2s Bloch wave state excitations on quantitative HAADF STEM imaging. Physical review. B.. 100(18). 1 indexed citations
8.
Kim, Young Mo, et al.. (2019). Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface. Scientific Reports. 9(1). 16202–16202. 25 indexed citations
9.
Wolny, P., Marta Sawicka, Tobias Schulz, et al.. (2018). Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices. Journal of Applied Physics. 124(6). 10 indexed citations
10.
Siekacz, M., Ewa Grzanka, Tobias Schulz, et al.. (2018). Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application. Applied Physics Letters. 113(3). 21 indexed citations
11.
Markurt, T., Tobias Schulz, P. Drechsel, P. Stauß, & M. Albrecht. (2018). A predictive model for plastic relaxation in (0001)-oriented wurtzite thin films and heterostructures. Journal of Applied Physics. 124(3). 9 indexed citations
12.
Markurt, T., et al.. (2018). Intentional polarity conversion of AlN epitaxial layers by oxygen. Scientific Reports. 8(1). 14111–14111. 52 indexed citations
13.
Markurt, T., Aimeric Courville, Katia March, et al.. (2017). Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers. Journal of Applied Physics. 122(15). 27 indexed citations
14.
Guguschev, Christo, Dirk J. Kok, T. Markurt, et al.. (2017). Czochralski growth and characterization of cerium doped calcium scandate. CrystEngComm. 19(18). 2553–2560. 3 indexed citations
15.
Schmidbauer, M., et al.. (2017). Strain engineering of monoclinic domains in K x Na1−x NbO3 epitaxial layers: a pathway to enhanced piezoelectric properties. Nanotechnology. 28(24). 24LT02–24LT02. 27 indexed citations
16.
Galazka, Zbigniew, R. Uecker, K. Irmscher, et al.. (2016). Melt growth and properties of bulk BaSnO3single crystals. Journal of Physics Condensed Matter. 29(7). 75701–75701. 31 indexed citations
17.
Schewski, Robert, M. Baldini, K. Irmscher, et al.. (2016). Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model. Journal of Applied Physics. 120(22). 91 indexed citations
18.
Heimburger, Robert F., et al.. (2015). Crystalline silicon on glass by steady-state solution growth using indium as solvent. Applied Physics A. 119(4). 1577–1586. 5 indexed citations
19.
Rotunno, Enzo, M. Albrecht, T. Markurt, T. Remmele, & Vincenzo Grillo. (2014). Three dimensional analysis of the composition in solid alloys by variable probe in scanning transmission electron microscopy. Ultramicroscopy. 146. 62–70. 7 indexed citations
20.
Markurt, T., L. Lymperakis, Jörg Neugebauer, et al.. (2013). Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters. 110(3). 36103–36103. 59 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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