Jean-Marc Bethoux

402 total citations
16 papers, 321 citations indexed

About

Jean-Marc Bethoux is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Jean-Marc Bethoux has authored 16 papers receiving a total of 321 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 7 papers in Condensed Matter Physics. Recurrent topics in Jean-Marc Bethoux's work include Semiconductor materials and devices (7 papers), GaN-based semiconductor devices and materials (7 papers) and Carbon Nanotubes in Composites (6 papers). Jean-Marc Bethoux is often cited by papers focused on Semiconductor materials and devices (7 papers), GaN-based semiconductor devices and materials (7 papers) and Carbon Nanotubes in Composites (6 papers). Jean-Marc Bethoux collaborates with scholars based in France, United Kingdom and Belgium. Jean-Marc Bethoux's co-authors include G. Dambrine, Vincent Derycke, H. Happy, J.‐P. Bourgoin, P. Vennéguès, M. F. Goffman, O. Tottereau, P. de Mierry, E. Feltin and F. Natali and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Jean-Marc Bethoux

15 papers receiving 316 citations

Peers

Jean-Marc Bethoux

CMP

EEE

AMPO

D. Sotta France

C.H. Liu Taiwan

Christopher D. Pynn United States

Chu‐Li Chao Taiwan

Hao-Chung Kuo Taiwan

Y. Gong United Kingdom

F. Ranalli United Kingdom

M. Hirsch Germany

Jeong-Tak Oh South Korea

Gordon Schmidt Germany

D. Sotta France

Jean-Marc Bethoux

177 ×0.9

284 ×1.9

CMP

129 ×0.9

EEE

92 ×1.0

AMPO

69 ×0.8

Citations per year, relative to Jean-Marc Bethoux Jean-Marc Bethoux (= 1×) peers D. Sotta

Countries citing papers authored by Jean-Marc Bethoux

Since Specialization

Citations

This map shows the geographic impact of Jean-Marc Bethoux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jean-Marc Bethoux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jean-Marc Bethoux more than expected).

Fields of papers citing papers by Jean-Marc Bethoux

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jean-Marc Bethoux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jean-Marc Bethoux. The network helps show where Jean-Marc Bethoux may publish in the future.

Co-authorship network of co-authors of Jean-Marc Bethoux

This figure shows the co-authorship network connecting the top 25 collaborators of Jean-Marc Bethoux. A scholar is included among the top collaborators of Jean-Marc Bethoux based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jean-Marc Bethoux. Jean-Marc Bethoux is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Bertrand, Isabelle, Philippe Flatresse, Jean-Marc Bethoux, et al.. (2022). (G02 Best Paper Award Winner) Development Of High Resistivity FD-SOI Substrates for mmWave Applications. ECS Meeting Abstracts. MA2022-01(29). 1273–1273.

Bertrand, Isabelle, Philippe Flatresse, Guillaume Besnard, et al.. (2022). Development Of High Resistivity FD-SOI Substrates for mmWave Applications. ECS Transactions. 108(5). 31–45. 3 indexed citations

Cherkashin, N., A. Claverie, D. Sotta, et al.. (2012). Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices. Applied Physics Letters. 101(2). 1 indexed citations

Curutchet, Arnaud, D. Théron, D. Ducatteau, et al.. (2008). Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors. IEEE Transactions on Microwave Theory and Techniques. 56(7). 1505–1510. 4 indexed citations

Evans–Freeman, J.H., S. A. Clark, Thierry G.G. Maffeïs, et al.. (2008). Ni ∕ Al 0.2 Ga 0.8 N interfacial reaction and Schottky contact formation using high quality epitaxial layers. Journal of Applied Physics. 103(5). 3 indexed citations

Bethoux, Jean-Marc, H. Happy, G. Dambrine, et al.. (2007). Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors. Applied Physics Letters. 90(23). 88 indexed citations

Bethoux, Jean-Marc, H. Happy, G. Dambrine, et al.. (2006). An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications. IEEE Electron Device Letters. 27(8). 681–683. 48 indexed citations

Bourgoin, J.‐P., Julien Borghetti, Pascale Chenevier, et al.. (2006). Directed assembly for carbon nanotube device fabrication. HAL (Le Centre pour la Communication Scientifique Directe). 302. 1–4. 4 indexed citations

Bethoux, Jean-Marc, H. Happy, Alexandre Siligaris, et al.. (2006). Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements. IEEE Transactions on Nanotechnology. 5(4). 335–342. 21 indexed citations

10.

Bethoux, Jean-Marc, et al.. (2006). Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement. Materials Science and Engineering B. 135(3). 294–296. 5 indexed citations

11.

Bethoux, Jean-Marc, H. Happy, G. Dambrine, et al.. (2006). Carbon nanotube field-effect transistor for GHz operation. HAL (Le Centre pour la Communication Scientifique Directe). 4. 206–209. 2 indexed citations

12.

Evans–Freeman, J.H., et al.. (2006). Structural and electrical characteristics of Ag/Al_0.2Ga_0.8N and Ag/Al_0.3Ga_0.7N Schottky contacts: an XPS study. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1823–1827. 1 indexed citations

13.

Bethoux, Jean-Marc & P. Vennéguès. (2005). Ductile relaxation in cracked metal-organic chemical-vapor-deposition-grown AlGaN films on GaN. Journal of Applied Physics. 97(12). 19 indexed citations

14.

Bougrioua, Z., et al.. (2004). Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures. Journal of Applied Physics. 97(2). 28 indexed citations

15.

Bethoux, Jean-Marc, P. Vennéguès, F. Natali, et al.. (2003). Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks. Journal of Applied Physics. 94(10). 6499–6507. 84 indexed citations

16.

Mierry, P. de, Jean-Marc Bethoux, H. P. D. Schenk, et al.. (2002). Vertical Cavity InGaN LEDs Grown by MOVPE. physica status solidi (a). 192(2). 335–340. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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