John Wright

807 total citations
18 papers, 377 citations indexed

About

John Wright is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, John Wright has authored 18 papers receiving a total of 377 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 7 papers in Condensed Matter Physics and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in John Wright's work include Semiconductor materials and devices (6 papers), GaN-based semiconductor devices and materials (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). John Wright is often cited by papers focused on Semiconductor materials and devices (6 papers), GaN-based semiconductor devices and materials (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). John Wright collaborates with scholars based in United States, Germany and Switzerland. John Wright's co-authors include Huili Grace Xing, Debdeep Jena, David A. Muller, Brian P. Downey, Rusen Yan, Neeraj Nepal, D. S. Katzer, Celesta S. Chang, Guru Khalsa and David J. Meyer and has published in prestigious journals such as Nature, Applied Physics Letters and ACS Applied Materials & Interfaces.

In The Last Decade

John Wright

18 papers receiving 366 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
John Wright United States 10 195 154 136 106 99 18 377
V. Vranković Switzerland 9 155 0.8× 84 0.5× 60 0.4× 60 0.6× 100 1.0× 33 389
Keith Middleman United Kingdom 7 111 0.6× 37 0.2× 65 0.5× 147 1.4× 57 0.6× 25 282
D. Seghier Iceland 11 270 1.4× 196 1.3× 203 1.5× 39 0.4× 51 0.5× 50 470
John Mazurowski United States 11 233 1.2× 25 0.2× 183 1.3× 47 0.4× 61 0.6× 41 418
A. I. Belyaeva Ukraine 12 88 0.5× 39 0.3× 166 1.2× 60 0.6× 36 0.4× 59 353
П. В. Волков Russia 9 112 0.6× 37 0.2× 63 0.5× 64 0.6× 29 0.3× 51 270
J.B. Schillig United States 13 126 0.6× 90 0.6× 40 0.3× 220 2.1× 22 0.2× 29 398
Carl J. Martin United States 11 39 0.2× 77 0.5× 165 1.2× 48 0.5× 38 0.4× 37 376
N. Teofilov Germany 10 200 1.0× 119 0.8× 385 2.8× 36 0.3× 83 0.8× 23 510
Е. В. Скороходов Russia 10 133 0.7× 97 0.6× 84 0.6× 79 0.7× 11 0.1× 66 307

Countries citing papers authored by John Wright

Since Specialization
Citations

This map shows the geographic impact of John Wright's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John Wright with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John Wright more than expected).

Fields of papers citing papers by John Wright

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John Wright. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John Wright. The network helps show where John Wright may publish in the future.

Co-authorship network of co-authors of John Wright

This figure shows the co-authorship network connecting the top 25 collaborators of John Wright. A scholar is included among the top collaborators of John Wright based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John Wright. John Wright is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Wright, John, Huili Grace Xing, & Debdeep Jena. (2023). Growth windows of epitaxial NbNx films on c-plane sapphire and their structural and superconducting properties. Physical Review Materials. 7(7). 11 indexed citations
2.
Wright, John, V. Ortiz, Alexander A. Balandin, et al.. (2022). Properties for Thermally Conductive Interfaces with Wide Band Gap Materials. ACS Applied Materials & Interfaces. 14(31). 36178–36188. 19 indexed citations
3.
Wright, John, Celesta S. Chang, David A. Muller, Huili Grace Xing, & Debdeep Jena. (2022). Structural and electronic properties of NbN/GaN junctions grown by molecular beam epitaxy. APL Materials. 10(5). 10 indexed citations
4.
Yu, Tianlun, John Wright, Guru Khalsa, et al.. (2021). Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction. Science Advances. 7(52). eabi5833–eabi5833. 9 indexed citations
5.
Casamento, Joseph, Celesta S. Chang, Yu‐Tsun Shao, et al.. (2020). Structural and piezoelectric properties of ultra-thin ScxAl1−xN films grown on GaN by molecular beam epitaxy. Applied Physics Letters. 117(11). 58 indexed citations
6.
Cheng, Risheng, John Wright, Huili Grace Xing, Debdeep Jena, & Hong X. Tang. (2020). Epitaxial niobium nitride superconducting nanowire single-photon detectors. Applied Physics Letters. 117(13). 33 indexed citations
7.
Miller, J. N., John Wright, Huili Grace Xing, & Debdeep Jena. (2020). All‐Epitaxial Bulk Acoustic Wave Resonators. physica status solidi (a). 217(7). 9 indexed citations
8.
Wright, John, et al.. (2020). Epitaxial superconducting tunnel diodes for light detection applications. Optical Materials Express. 10(7). 1724–1724. 4 indexed citations
9.
Katzer, D. S., Neeraj Nepal, Matthew T. Hardy, et al.. (2019). Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications. physica status solidi (a). 217(3). 24 indexed citations
10.
Katzer, D. S., Neeraj Nepal, Matthew T. Hardy, et al.. (2019). Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications. 1–1. 1 indexed citations
11.
Yan, Rusen, Guru Khalsa, Suresh Vishwanath, et al.. (2018). GaN/NbN epitaxial semiconductor/superconductor heterostructures. Nature. 555(7695). 183–189. 119 indexed citations
12.
Sadrozinski, H. F-W., et al.. (2012). Punch-through protection of SSDs. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 699. 31–35. 6 indexed citations
13.
Betancourt, C., Alden Deran, S. Ely, et al.. (2012). The Punch-Through Effect in Silicon Strip Detectors. IEEE Transactions on Nuclear Science. 59(3). 671–684. 4 indexed citations
14.
Christophersen, M., V. Fadeyev, Bernard F. Phlips, et al.. (2012). Alumina and silicon oxide/nitride sidewall passivation for P- and N-type sensors. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 699. 14–17. 26 indexed citations
15.
Sadrozinski, H. F-W., C. Betancourt, V. Fadeyev, et al.. (2011). Punch-through protection of SSDs in beam accidents. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 658(1). 46–50. 8 indexed citations
16.
Betancourt, C., et al.. (2010). Punch-through effect and collapse of the electric field in silicon strip detectors. 388–391. 1 indexed citations
17.
Fadeyev, V., et al.. (2009). Improving pixel detectors: Active area optimization and high temperature annealing. 1674–1677. 2 indexed citations
18.
Nowak, E., B.A. Rainey, David Fried, et al.. (2003). A functional FinFET-DGCMOS SRAM cell. 411–414. 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026