David F. Storm

2.4k citations

94 papers · 2.0k indexed · h-index 27

Condensed Matter Physics top 0.5%
Electrical and Electronic Engineering top 5%
Electronic, Optical and Magnetic Materials top 5%
Atomic and Molecular Physics, and Optics top 5%
Materials Chemistry top 10%

Co-authors: D. S. Katzer David J. Meyer S.C. Binari Brian P. Downey Neeraj Nepal Matthew T. Hardy J.A. Roussos David J. Smith
Topics: GaN-based semiconductor devices and materials (74 papers)Semiconductor materials and devices (36 papers)Ga2O3 and related materials (23 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Physical Review Letters Nano Letters Physical review. B, Condensed matter
Partner nations: United States U.S. Virgin Islands Italy

In The Last Decade

David F. Storm

92 papers receiving 1.9k citations

Peers

Countries citing papers authored by David F. Storm

Since Specialization

Citations

This map shows the geographic impact of David F. Storm's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David F. Storm with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David F. Storm more than expected).

Fields of papers citing papers by David F. Storm

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David F. Storm. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David F. Storm. The network helps show where David F. Storm may publish in the future.

Co-authorship network of co-authors of David F. Storm

This figure shows the co-authorship network connecting the top 25 collaborators of David F. Storm. A scholar is included among the top collaborators of David F. Storm based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with David F. Storm. David F. Storm is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Structural and optical properties of cubic GaN films on high-thermal conductivity substrates 2025 ·Journal of Applied Physics ·Jaime A. Freitas,James C. Culbertson,David F. Storm,Nadeemullah A. Mahadik,Neeraj Nepal,Travis J. Anderson	0
2	Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 2020 ·AIP Advances ·(unknown),Tyler A. Growden,David F. Storm,E. R. Brown,Weidong Zhang,Brian P. Downey,Vikrant J. Gokhale,Laura B. Ruppalt,James G. Champlain,(unknown),Martha R. McCartney,David J. Smith,David J. Meyer,Paul R. Berger	7
3	Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire 2020 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·David F. Storm,Tyler A. Growden,(unknown),(unknown),(unknown),Jeffrey W. Daulton,Weidong Zhang,D. S. Katzer,Matthew T. Hardy,Neeraj Nepal,R. J. Molnar,E. R. Brown,Paul R. Berger,David J. Smith,David J. Meyer	6
4	Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes 2020 ·Applied Physics Letters ·Tyler A. Growden,David F. Storm,(unknown),E. R. Brown,Weidong Zhang,Brian P. Downey,J.A. Roussos,Nicholas Cronk,Laura B. Ruppalt,James G. Champlain,Paul R. Berger,David J. Meyer	27
5	Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer 2020 ·Journal of Applied Physics ·Eric N. Jin,Andrew C. Lang,Matthew T. Hardy,Neeraj Nepal,D. S. Katzer,David F. Storm,Brian P. Downey,David J. Meyer	4
6	Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films 2019 ·MPG.PuRe (Max Planck Society) ·Nikolai Christian Paßler,Ilya Razdolski,D. S. Katzer,David F. Storm,Joshua D. Caldwell,Martin Wolf,Alexander Paarmann	18
7	930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template 2019 ·Applied Physics Letters ·Tyler A. Growden,(unknown),David F. Storm,Weidong Zhang,E. R. Brown,(unknown),Jeffrey W. Daulton,R. J. Molnar,David J. Meyer,Paul R. Berger	20
8	Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications 2019 ·physica status solidi (a) ·D. S. Katzer,Neeraj Nepal,Matthew T. Hardy,Brian P. Downey,David F. Storm,Eric N. Jin,Rusen Yan,Guru Khalsa,John Wright,Andrew C. Lang,Tyler A. Growden,Vikrant J. Gokhale,Virginia D. Wheeler,Alan R. Kramer,J. E. Yater,Huili Grace Xing,Debdeep Jena,David J. Meyer	24
9	Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures 2018 ·Nano Letters ·Nikolai Christian Paßler,Christopher R. Gubbin,Thomas G. Folland,Ilya Razdolski,D. S. Katzer,David F. Storm,Martin Wolf,Simone De Liberato,Joshua D. Caldwell,Alexander Paarmann	80
10	Scandium Aluminum Nitride as an Emerging Material for High Power Transistors 2018 ·Matthew T. Hardy,David J. Meyer,Neeraj Nepal,Brian P. Downey,D. S. Katzer,David F. Storm	6
11	Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures 2017 ·Light Science & Applications ·Tyler A. Growden,Weidong Zhang,E. R. Brown,David F. Storm,David J. Meyer,Paul R. Berger	49
12	Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates 2017 ·Applied Physics Letters ·Matthew T. Hardy,Brian P. Downey,Neeraj Nepal,David F. Storm,D. S. Katzer,David J. Meyer	130
13	Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors 2016 ·Journal of Visualized Experiments ·Matthew T. Hardy,David F. Storm,D. S. Katzer,Brian P. Downey,Neeraj Nepal,David J. Meyer	2
14	Characterization of molecular beam epitaxy grown β-Nb₂N films and AlN/β-Nb₂N heterojunctions on 6H-SiC substrates 2016 ·Applied Physics Express ·Neeraj Nepal,D. S. Katzer,David J. Meyer,Brian P. Downey,Virginia D. Wheeler,David F. Storm,Matthew T. Hardy	17
15	Microstructure of Ti/Al/Ni/Au ohmic contacts for N-polar GaN/AlGaN high electron mobility transistor devices 2013 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Lin Zhou,Michael R. Johnson,David J. Smith,David J. Meyer,David F. Storm,D. S. Katzer,Brian P. Downey	4
16	AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization 2007 ·Journal of Crystal Growth ·David F. Storm,D. S. Katzer,J.A. Roussos,J. Mittereder,Robert B. Bass,S.C. Binari,Drew Hanser,Edward A. Preble,K. R. Evans	30
17	Correlation of electronic and structural properties of MBE‐grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth 2005 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·David F. Storm,D. S. Katzer,S.C. Binari,B. V. Shanabrook,Lin Zhou,David J. Smith	2
18	Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping 2002 ·Applied Physics Letters ·David F. Storm,D. S. Katzer,S.C. Binari,E. R. Glaser,B. V. Shanabrook,J.A. Roussos	26
19	Molecular-beam epitaxy of InTlAs 1998 ·Journal of Electronic Materials ·M. D. Lange,David F. Storm,(unknown)	14
20	Oscillatory interlayer coupling through (111) oriented noble metal spacers 1994 ·Journal of Applied Physics ·D. J. Keavney,David F. Storm,J. W. Freeland,J. C. Walker,M. G. Pini,Paolo Politi,A. Rettori	1

About David F. Storm

David F. Storm is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 94 papers that have together received 2.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (74 papers), Semiconductor materials and devices (36 papers) and Ga2O3 and related materials (23 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (745 citations) and Atomic and Molecular Physics, and Optics (670 citations). David F. Storm has collaborated with scholars based in United States, U.S. Virgin Islands and Italy. Frequent co-authors include D. S. Katzer, David J. Meyer, S.C. Binari, Brian P. Downey, Neeraj Nepal, Matthew T. Hardy, J.A. Roussos, David J. Smith, J. Mittereder and Lin Zhou. Their work appears in journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

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