R. Leitsmann

619 total citations
33 papers, 479 citations indexed

About

R. Leitsmann is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Leitsmann has authored 33 papers receiving a total of 479 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Leitsmann's work include Semiconductor materials and devices (14 papers), Quantum Dots Synthesis And Properties (13 papers) and Semiconductor Quantum Structures and Devices (9 papers). R. Leitsmann is often cited by papers focused on Semiconductor materials and devices (14 papers), Quantum Dots Synthesis And Properties (13 papers) and Semiconductor Quantum Structures and Devices (9 papers). R. Leitsmann collaborates with scholars based in Germany, Austria and Japan. R. Leitsmann's co-authors include F. Bechstedt, P. H. Hahn, W. G. Schmidt, L. E. Ramos, F. Schäffler, Kazuto Koike, Mitsuaki Yano, Christian Panse, Heiko Groiß and Oliver M. Böhm and has published in prestigious journals such as ACS Nano, Journal of Applied Physics and Physical Review B.

In The Last Decade

R. Leitsmann

33 papers receiving 473 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Leitsmann Germany 13 327 315 209 77 53 33 479
А. V. Kosobutsky Russia 13 329 1.0× 300 1.0× 111 0.5× 46 0.6× 126 2.4× 41 453
S. Filimonov Russia 12 175 0.5× 210 0.7× 175 0.8× 93 1.2× 25 0.5× 37 398
N. Franco Germany 12 243 0.7× 210 0.7× 226 1.1× 85 1.1× 29 0.5× 21 414
Mickaël Beaudhuin France 11 330 1.0× 161 0.5× 120 0.6× 33 0.4× 156 2.9× 40 433
A. Ramstad Norway 9 242 0.7× 207 0.7× 375 1.8× 56 0.7× 23 0.4× 12 546
Shinji Higuchi Japan 9 208 0.6× 279 0.9× 347 1.7× 109 1.4× 23 0.4× 19 450
Yunzhong Zhu China 12 227 0.7× 170 0.5× 136 0.7× 45 0.6× 26 0.5× 28 317
F. Widulle Germany 10 398 1.2× 252 0.8× 135 0.6× 54 0.7× 98 1.8× 16 508
Bi-Ru Wu Taiwan 14 464 1.4× 180 0.6× 157 0.8× 93 1.2× 60 1.1× 36 541
Takanori Suzuki Japan 11 188 0.6× 223 0.7× 166 0.8× 50 0.6× 13 0.2× 39 372

Countries citing papers authored by R. Leitsmann

Since Specialization
Citations

This map shows the geographic impact of R. Leitsmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Leitsmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Leitsmann more than expected).

Fields of papers citing papers by R. Leitsmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Leitsmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Leitsmann. The network helps show where R. Leitsmann may publish in the future.

Co-authorship network of co-authors of R. Leitsmann

This figure shows the co-authorship network connecting the top 25 collaborators of R. Leitsmann. A scholar is included among the top collaborators of R. Leitsmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Leitsmann. R. Leitsmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Leitsmann, R., et al.. (2017). Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High- ${k}$ CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration. IEEE Transactions on Electron Devices. 64(12). 5073–5080. 2 indexed citations
2.
Böhm, Oliver M., et al.. (2016). ReaxFF+—A New Reactive Force Field Method for the Accurate Description of Ionic Systems and Its Application to the Hydrolyzation of Aluminosilicates. The Journal of Physical Chemistry C. 120(20). 10849–10856. 6 indexed citations
3.
Nadimi, Ebrahim, et al.. (2015). Defect generation and activation processes in HfO2thin films: Contributions to stress-induced leakage currents. physica status solidi (a). 212(3). 547–553. 21 indexed citations
4.
Drescher, Maximilian, Andreas Naumann, Jonas Sundqvist, et al.. (2015). Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(2). 10 indexed citations
5.
Ocker, J., Stefan Slesazeck, Thomas Mikolajick, et al.. (2014). Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 75. 86–89. 3 indexed citations
6.
Leitsmann, R., et al.. (2013). Oxygen related defects and the reliability of high-k dielectric films in FETs. 205. 1–4. 3 indexed citations
7.
Böhm, Oliver M., et al.. (2013). Novel k-restoring scheme for damaged ultra-low-k materials. Microelectronic Engineering. 112. 63–66. 4 indexed citations
8.
Böhm, Oliver M., et al.. (2012). Silylation of silicon bonded hydroxyl groups by silazanes and siloxanes containing an acetoxy group. N-trimethylsilylimidazole vs. dimethyldiacetoxysilane. Computational and Theoretical Chemistry. 991. 44–47. 2 indexed citations
9.
Leitsmann, R., et al.. (2011). Boron-Silicon complex defects in GaAs: An ab initio study. Journal of Applied Physics. 109(6). 7 indexed citations
10.
Panse, Christian, R. Leitsmann, & F. Bechstedt. (2010). Magnetic interaction in pairwise Mn-doped Si nanocrystals. Physical Review B. 82(12). 8 indexed citations
11.
Leitsmann, R. & F. Bechstedt. (2010). Ab initiocharacterization of the electronic properties of PbTe quantum dots embedded in a CdTe matrix. Semiconductor Science and Technology. 26(1). 14005–14005. 3 indexed citations
12.
Leitsmann, R., et al.. (2009). Ab initiocharacterization of transition-metal-doped Si nanocrystals. Physical Review B. 80(10). 12 indexed citations
13.
Leitsmann, R. & F. Bechstedt. (2009). Characteristic Energies and Shifts in Optical Spectra of Colloidal IV−VI Semiconductor Nanocrystals. ACS Nano. 3(11). 3505–3512. 39 indexed citations
14.
Groiß, Heiko, Günter Hesser, F. Schäffler, et al.. (2009). Coherent {001} interfaces between rocksalt and zinc-blende crystal structures. Physical Review B. 79(23). 15 indexed citations
15.
Leitsmann, R., et al.. (2009). Mn and Fe doping of bulk Si: Concentration influence on electronic and magnetic properties. Physical Review B. 80(4). 20 indexed citations
16.
Leitsmann, R. & F. Bechstedt. (2008). Interplay of shape, interface structure, and electrostatic fields of ionic nanodots embedded in a polar semiconductor matrix. Physical Review B. 78(20). 7 indexed citations
17.
Groiß, Heiko, Günter Hesser, M. Böberl, et al.. (2007). Quantum dots with coherent interfaces between rocksalt-PbTe and zincblende-CdTe. Journal of Applied Physics. 101(8). 16 indexed citations
18.
Leitsmann, R. & F. Bechstedt. (2007). Surface influence on stability and structure of hexagon-shaped III-V semiconductor nanorods. Journal of Applied Physics. 102(6). 67 indexed citations
19.
Böberl, M., Thomas Schwarzl, G. Springholz, et al.. (2006). Highly luminescent nanocrystal quantum dots fabricated by lattice-type mismatched epitaxy. Physica E Low-dimensional Systems and Nanostructures. 35(2). 241–245. 8 indexed citations
20.
Leitsmann, R., W. G. Schmidt, P. H. Hahn, & F. Bechstedt. (2005). Second-harmonic polarizability including electron-hole attraction from band-structure theory. Physical Review B. 71(19). 75 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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