Michael Hoffmann

5.5k total citations · 2 hit papers
83 papers, 4.2k citations indexed

About

Michael Hoffmann is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanical Engineering. According to data from OpenAlex, Michael Hoffmann has authored 83 papers receiving a total of 4.2k indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Electrical and Electronic Engineering, 55 papers in Materials Chemistry and 4 papers in Mechanical Engineering. Recurrent topics in Michael Hoffmann's work include Ferroelectric and Negative Capacitance Devices (61 papers), Ferroelectric and Piezoelectric Materials (36 papers) and Semiconductor materials and devices (36 papers). Michael Hoffmann is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (61 papers), Ferroelectric and Piezoelectric Materials (36 papers) and Semiconductor materials and devices (36 papers). Michael Hoffmann collaborates with scholars based in Germany, United States and Italy. Michael Hoffmann's co-authors include Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck, Milan Pešić, Tony Schenk, Benjamin Max, Franz P. G. Fengler, Min Hyuk Park, Claudia Richter and Alfred Kersch and has published in prestigious journals such as Nature, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Michael Hoffmann

79 papers receiving 4.2k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Stabilizing the ferroelectric phase in doped hafnium oxide

2015 481 citations Michael Hoffmann, Uwe Schroeder et al. Journal of Applied Physics profile →
Next generation ferroelectric materials for semiconductor process integration and their applications

2021 291 citations Thomas Mikolajick, Stefan Slesazeck et al. Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Michael Hoffmann Germany	32	3.7k	3.1k	351	245	106	83	4.2k
Sherif Abdulkader Tawfik Australia	29	1.7k 0.4×	1.7k 0.6×	445 1.3×	238 1.0×	82 0.8×	126	2.9k
Yujie Zheng China	22	955 0.3×	1.6k 0.5×	300 0.9×	211 0.9×	52 0.5×	71	2.2k
Alireza Faghaninia United States	17	1.1k 0.3×	2.4k 0.8×	117 0.3×	384 1.6×	35 0.3×	21	2.6k
John S. Suehle United States	38	4.0k 1.1×	888 0.3×	1.0k 2.9×	291 1.2×	115 1.1×	174	4.4k
Wei Shi China	25	1.5k 0.4×	1.1k 0.4×	294 0.8×	179 0.7×	43 0.4×	191	2.5k
Ondrej Dyck United States	25	1.2k 0.3×	1.4k 0.4×	300 0.9×	124 0.5×	22 0.2×	84	2.3k
T. Sorsch United States	17	1.7k 0.5×	758 0.2×	266 0.8×	176 0.7×	56 0.5×	45	1.9k
Menglu Chen China	24	1.6k 0.4×	1.7k 0.5×	386 1.1×	212 0.9×	9 0.1×	84	2.2k
Dawei He China	23	1.5k 0.4×	1.8k 0.6×	305 0.9×	330 1.3×	14 0.1×	118	2.3k

Countries citing papers authored by Michael Hoffmann

Since Specialization

Citations

This map shows the geographic impact of Michael Hoffmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael Hoffmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael Hoffmann more than expected).

Fields of papers citing papers by Michael Hoffmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael Hoffmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael Hoffmann. The network helps show where Michael Hoffmann may publish in the future.

Co-authorship network of co-authors of Michael Hoffmann

This figure shows the co-authorship network connecting the top 25 collaborators of Michael Hoffmann. A scholar is included among the top collaborators of Michael Hoffmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michael Hoffmann. Michael Hoffmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hoffmann, Michael, et al.. (2024). 3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films. Advanced Electronic Materials. 10(10). 7 indexed citations

Mueller, Stefan, Marko Noack, J. Ocker, et al.. (2024). Ferroelectric Hafnia: A New Age for FRAM has Started. 1–6.

Hoffmann, Michael, Suraj Cheema, Nirmaan Shanker, Wenyu Li, & Sayeef Salahuddin. (2022). Quantitative study of EOT lowering in negative capacitance HfO₂-ZrO₂ superlattice gate stacks. 2022 International Electron Devices Meeting (IEDM). 13.2.1–13.2.4. 4 indexed citations

Hoffmann, Michael, Ava J. Tan, Nirmaan Shanker, et al.. (2022). Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics. IEEE Electron Device Letters. 43(12). 2097–2100. 12 indexed citations

Hoffmann, Michael, et al.. (2021). Intrinsic Nature of Negative Capacitance in Multidomain Hf_0.5Zr_0.5O₂‐Based Ferroelectric/Dielectric Heterostructures. Advanced Functional Materials. 32(2). 41 indexed citations

Stolichnov, Igor, Matteo Cavalieri, Michael Hoffmann, et al.. (2020). Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structures. Applied Physics Letters. 117(17). 10 indexed citations

Tang, Ying, et al.. (2019). Biosynthesis and Heterologous Production of Argyrins. ACS Synthetic Biology. 8(5). 1121–1133. 32 indexed citations

Hoffmann, Michael, Patrick D. Lomenzo, Claudia Richter, et al.. (2019). Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf_0.5Zr_0.5O₂ Capacitors. Advanced Materials Interfaces. 6(21). 79 indexed citations

Pentapati, Sai, et al.. (2019). Cross-Domain Optimization of Ferroelectric Parameters for Negative Capacitance Transistors—Part I: Constant Supply Voltage. IEEE Transactions on Electron Devices. 67(1). 365–370. 6 indexed citations

10.

Lomenzo, Patrick D., Stefan Slesazeck, Michael Hoffmann, et al.. (2019). Ferroelectric Hf_1-xZr_xO₂ memories: device reliability and depolarization fields. Qucosa (Saxon State and University Library Dresden). 1–8. 30 indexed citations

11.

Hoffmann, Michael, et al.. (2019). A high-affinity fluorescence probe for copper(II) ions and its application in fluorescence lifetime correlation spectroscopy. Analytical and Bioanalytical Chemistry. 411(15). 3229–3240. 13 indexed citations

12.

Hoffmann, Michael, Franz P. G. Fengler, Melanie Herzig, et al.. (2019). Unveiling the double-well energy landscape in a ferroelectric layer. Nature. 565(7740). 464–467. 309 indexed citations

13.

Hoffmann, Michael, Asif Islam Khan, Claudy Serrao, et al.. (2018). Ferroelectric negative capacitance domain dynamics. Journal of Applied Physics. 123(18). 70 indexed citations

14.

Pešić, Milan, Luca Larcher, Thomas Mikolajick, et al.. (2018). Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications. IEEE Journal of the Electron Devices Society. 6. 1019–1025. 51 indexed citations

15.

Khan, Asif Islam, Michael Hoffmann, Korok Chatterjee, et al.. (2017). Differential voltage amplification from ferroelectric negative capacitance. Applied Physics Letters. 111(25). 30 indexed citations

16.

Unteregger, Gerhard, Jörg Haupenthal, Michael Hoffmann, et al.. (2017). CYP17A1-independent production of the neurosteroid-derived 5α-pregnan-3β,6α-diol-20-one in androgen-responsive prostate cancer cell lines under serum starvation and inhibition by Abiraterone. The Journal of Steroid Biochemistry and Molecular Biology. 174. 183–191. 7 indexed citations

17.

Lecce, Valerio Di, Michael Hoffmann, Halid Mulaosmanovic, et al.. (2017). Physical and circuit modeling of HfO<inf>2</inf> based ferroelectric memories and devices. IRIS UNIMORE (University of Modena and Reggio Emilia). 26. 1–4. 2 indexed citations

18.

Pešić, Milan, Steve Knebel, Michael Hoffmann, et al.. (2016). How to make DRAM non-volatile? Anti-ferroelectrics: A new paradigm for universal memories. 11.6.1–11.6.4. 51 indexed citations

19.

Büermann, L, et al.. (2006). Measurement of the x-ray mass energy-absorption coefficient of air using 3 keV to 10 keV synchrotron radiation. Physics in Medicine and Biology. 51(20). 5125–5150. 31 indexed citations

20.

Neugebauer, Reimund, et al.. (2005). Incremental Forming of Hollow Shapes. steel research international. 76(2-3). 171–176. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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