C. Constantine

1.3k total citations
67 papers, 1.0k citations indexed

About

C. Constantine is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Constantine has authored 67 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Electrical and Electronic Engineering, 16 papers in Condensed Matter Physics and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Constantine's work include Semiconductor materials and devices (53 papers), Plasma Diagnostics and Applications (27 papers) and GaN-based semiconductor devices and materials (16 papers). C. Constantine is often cited by papers focused on Semiconductor materials and devices (53 papers), Plasma Diagnostics and Applications (27 papers) and GaN-based semiconductor devices and materials (16 papers). C. Constantine collaborates with scholars based in United States and Germany. C. Constantine's co-authors include S. J. Pearton, R. J. Shul, C. Barratt, C. R. Abernathy, F. Ren, G McClellan, D. J. Rieger, W. S. Hobson, U. K. Chakrabarti and D. Johnson and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Electronics Letters.

In The Last Decade

C. Constantine

61 papers receiving 966 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Constantine United States 17 880 452 224 223 212 67 1.0k
J. R. Lothian United States 24 1.5k 1.7× 658 1.5× 647 2.9× 347 1.6× 213 1.0× 112 1.8k
U. K. Chakrabarti United States 19 929 1.1× 141 0.3× 443 2.0× 171 0.8× 106 0.5× 73 1.1k
R. D. Briggs United States 14 544 0.6× 351 0.8× 210 0.9× 178 0.8× 91 0.4× 31 714
R. N. Bicknell-Tassius Germany 18 679 0.8× 235 0.5× 611 2.7× 398 1.8× 68 0.3× 67 990
Masaaki Yuri Japan 17 485 0.6× 520 1.2× 472 2.1× 246 1.1× 109 0.5× 66 851
Yasuto Yonezawa Japan 15 401 0.5× 153 0.3× 122 0.5× 464 2.1× 112 0.5× 56 686
R. P. Vaudo United States 20 646 0.7× 1.1k 2.3× 420 1.9× 542 2.4× 255 1.2× 34 1.3k
U. Smith Sweden 13 456 0.5× 78 0.2× 342 1.5× 139 0.6× 148 0.7× 50 710
Р.А. Талалаев Germany 16 402 0.5× 768 1.7× 264 1.2× 330 1.5× 199 0.9× 51 893
Y.-W. Kim United States 13 418 0.5× 515 1.1× 223 1.0× 422 1.9× 437 2.1× 16 900

Countries citing papers authored by C. Constantine

Since Specialization
Citations

This map shows the geographic impact of C. Constantine's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Constantine with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Constantine more than expected).

Fields of papers citing papers by C. Constantine

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Constantine. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Constantine. The network helps show where C. Constantine may publish in the future.

Co-authorship network of co-authors of C. Constantine

This figure shows the co-authorship network connecting the top 25 collaborators of C. Constantine. A scholar is included among the top collaborators of C. Constantine based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Constantine. C. Constantine is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Khanna, Raghav, Luc Stafford, S. J. Pearton, et al.. (2007). Reduction of Dry Etch Damage to GaAs Using Pulse-Time Modulated Plasmas. Electrochemical and Solid-State Letters. 10(5). H139–H139. 1 indexed citations
2.
Constantine, C., et al.. (2003). Improvements in binary chrome CD performance utilizing an optimized 4th-generation reactor platform. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5256. 736–736. 1 indexed citations
3.
Constantine, C., et al.. (2001). Plasma etching of quartz for the fabrication of alternating aperture phase-shift photomasks: etch rate uniformity study utilizing a next-generation ICP source. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4186. 316–316. 1 indexed citations
4.
Lee, J. W., S. J. Pearton, F. Ren, et al.. (1998). High Density Plasma Damage in InGaP/GaAs and AlGaAs/GaAs High Electron Mobility Transistors. Journal of The Electrochemical Society. 145(11). 4036–4039. 2 indexed citations
5.
Constantine, C., et al.. (1998). ICP quartz etch uniformity improvement for phase-shift mask fabrication. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3412. 220–220. 1 indexed citations
6.
Lee, J. W., David C. Hays, C. R. Abernathy, et al.. (1997). Inductively Coupled Ar Plasma Damage in AlGaAs. Journal of The Electrochemical Society. 144(9). L245–L247. 9 indexed citations
7.
Ren, F., C. R. Abernathy, S. J. Pearton, et al.. (1997). Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(4). 983–989. 8 indexed citations
8.
Abernathy, C. R., et al.. (1997). Etching of Ga-based III - V semiconductors in inductively coupled Ar and -based plasma chemistries. Plasma Sources Science and Technology. 6(4). 499–507. 20 indexed citations
9.
Constantine, C., et al.. (1997). Plasma etching of Cr photomasks: parametric comparisons of plasma sources and process conditions. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3096. 11–11. 4 indexed citations
10.
Constantine, C., et al.. (1997). Plasma etching of Cr photomasks: optimization of process conditions and CD control. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3236. 94–94. 3 indexed citations
11.
Lee, J. W., E. S. Lambers, C. R. Abernathy, et al.. (1996). Comparison of ICl and IBr Plasma Chemistries for Etching of InGaAlP Alloys. Journal of The Electrochemical Society. 143(11). 3656–3661. 1 indexed citations
12.
Shul, R. J., G McClellan, S.A. Casalnuovo, et al.. (1996). Inductively coupled plasma etching of GaN. Applied Physics Letters. 69(8). 1119–1121. 178 indexed citations
13.
Shul, R. J., R. D. Briggs, S. J. Pearton, et al.. (1996). Chlorine-Based Plasma Etching of GaN. MRS Proceedings. 449. 28 indexed citations
14.
Barratt, C., D. J. Johnson, & C. Constantine. (1995). <title>Dry etching for the fabrication of flat panel displays</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2408. 215–219. 1 indexed citations
15.
Shul, R. J., et al.. (1994). Anisotropic electron cyclotron resonance etchingof GaInP/AlGaInP heterostructures. Electronics Letters. 30(10). 817–819. 22 indexed citations
16.
Pearton, S. J., W. S. Hobson, F. Ren, C. R. Abernathy, & C. Constantine. (1994). Dry etched mesas for buried heterostructure InGaAsP/InP lasers using electron cyclotron resonance Cl2/CH4/H2/Ar discharges. Journal of Materials Science Materials in Electronics. 5(3). 185–190. 3 indexed citations
17.
Constantine, C., C. Barratt, S. J. Pearton, et al.. (1993). Dry etching of via connections for InP power devices. Electronics Letters. 29(11). 984–986. 17 indexed citations
18.
Pearton, S. J., C. R. Abernathy, F. Ren, et al.. (1993). Dry etching of thin-film InN, AlN and GaN. Semiconductor Science and Technology. 8(2). 310–312. 48 indexed citations
19.
Constantine, C., C. Barratt, S. J. Pearton, F. Ren, & J. R. Lothian. (1992). Microwave CI 2 /H 2 discharges for high rate etching of InP. Electronics Letters. 28(18). 1749–1750. 24 indexed citations
20.
Pearton, S. J., et al.. (1990). Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar. Applied Physics Letters. 56(15). 1424–1426. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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