A. Gurary

466 citations

24 papers · 363 indexed · h-index 9

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Computational Mechanics top 10%
- Fluid Dynamics and Thin Films

Papers in

Condensed Matter Physics 8
- GaN-based semiconductor devices and materials 8
Surfaces, Coatings and Films 3

Co-authors: L. Kadinski W. E. Quinn J. Ramer E. Armour V. Merai P. Zawadzki R. A. Stall M. V. Belousov
Journals: Journal of Crystal Growth (7 papers)Journal of Electronic Materials (2 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (1 paper)Journal of The Electrochemical Society (1 paper)Materials Science and Engineering B (1 paper)
Partner nations: United States

In The Last Decade

A. Gurary

22 papers receiving 343 citations

Peers

Countries citing papers authored by A. Gurary

Since Specialization

Citations

This map shows the geographic impact of A. Gurary's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Gurary with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Gurary more than expected).

Fields of papers citing papers by A. Gurary

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Gurary. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Gurary. The network helps show where A. Gurary may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Gurary, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Gurary Line = papers co-authored together A. Gurary links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Process conditions optimization for the maximum deposition rate and uniformity in vertical rotating disc MOCVD reactors based on CFD modeling Journal of Crystal Growth ·E Daniels, A. Gurary, W. E. Quinn	2007	63
2	Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors Journal of Crystal Growth ·E Daniels, Joseph Mah, J. Ramer, V. Merai, E. Armour, L. Kadinski, A. Gurary	2006	44
3	On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters Journal of Crystal Growth ·E Daniels, A. Gurary, L. Kadinski	2005	65
4	In situ metrology advances in MOCVD growth of GaN-based materials Journal of Crystal Growth ·M. V. Belousov, Jun Hyung Bang, J. Ramer, E. Armour, A. Gurary	2004	28
5	Application of Emissivity Compensated Pyrometry for Temperature Measurement and Control During Compound Semiconductors Manufacturing AIP conference proceedings ·A. Gurary	2003	7
6	Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Journal of Crystal Growth ·L. Kadinski, V. Merai, Joseph Mah, J. Ramer, E. Armour, R. A. Stall, A. Gurary, Sirikan Yamada, Yu.N. Makarov	2003	42
7	Emissivity Compensated Pyrometry of the Substrate Surface During Movpe Growth of In_xGa_1−xAs_1−yP_y/InP Materials in Rotating Disc Reactors MRS Proceedings ·J. Ramer, かの子山本, A. Patel, Michel Troche, A. Gurary	1999	2
8	Mass Production of High Brightness Blue and Green LEDs by MOCVD physica status solidi (a) ·C. A. Tran, R. F. Karlicek, 稔夫木下, Ricardo A. Vizuete, A. Gurary, M. Schurman, R. A. Stall	1999	5
9	Novel high temperature metal organic chemical vapor deposition vertical rotating-disk reactor with multizone heating for GaN and related materials Materials Science and Engineering B ·J. H. Darrell, A. Gurary, Yuan Luo, P. Zawadzki, 清章木内, T. Salagaj, Alan Thompson, H Purday, R. A. Stall, N. E. Schumaker	1995	4
10	Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Chris Yuan, T. Salagaj, A. Gurary, A. G. Thompson, Ts Yordanov, R. A. Stall, Chawon Hwang, M. Schurman, 上原元樹, W. E. Mayo, Yuangang Lu, S. Krishnankutty, I. K. Shmagin, R. M. Kolbas, S. J. Pearton	1995	28
11	Investigation of the wafer temperature uniformity in an omvpe vertical rotating disk reactor Journal of Electronic Materials ·A. Gurary, Alan Thompson, R. A. Stall, Ts Yordanov, N. E. Schumaker	1995	1
12	Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed, rotating disk reactor Journal of Crystal Growth ·Gary S. Tompa, P. Zawadzki, 清章木内, Salwa Abdul-Ghani Abdul-Rahman Al-Shamiri, Alan Thompson, A. Gurary, E. Wolak, P. Esherick, W.G. Breiland, G.H. Evans, Jia-hui ZHENG, John Hennessy, C. J. Moore	1994	13
13	A Synergistic Approach to Environmental Concerns in Large Scale MOCVD Processes MRS Proceedings ·Alan Thompson, Gary S. Tompa, P. Zawadzki, Salwa Abdul-Ghani Abdul-Rahman Al-Shamiri, Марія Александрова, Abigail Powers, A. Gurary, 清章木内, N. E. Schumaker	1994	1
14	Thermal and flow issues in the design of metalorganic chemical vapor deposition reactors Journal of Crystal Growth ·A. Gurary, Gary S. Tompa, Alan Thompson, R. A. Stall, P. Zawadzki, N. E. Schumaker	1994	12
15	Mechanical, Thermal and Flow Dynamics Issues in Compound Semiconductor MOCVD Reactor Design MRS Proceedings ·A. Gurary, Gary S. Tompa, 清章木内, P. Zawadzki	1994	1
16	Design and applications of large area RDRs III-Vs Review ·Gary S. Tompa, Ts Yordanov, C. S. Chern, M Marcella, P. Zawadzki, A. Gurary, Amanda L. Thompson, Salwa Abdul-Ghani Abdul-Rahman Al-Shamiri, R. A. Stall	1994	3
17	Elemental vapor transport epitaxy of II-VI semiconductors Journal of Electronic Materials ·A. Gurary, Gary S. Tompa, Sheng‐Kai Liang, R. A. Stall, Yuangang Lu, Chawon Hwang, W. E. Mayo	1993	1
18	Development and Implementation of Large Area, Economical Rotating Disk Reactor Technology for Metalorganic Chemical Vapor Deposition MRS Proceedings ·Gary S. Tompa, P. Zawadzki, Salwa Abdul-Ghani Abdul-Rahman Al-Shamiri, E. Wolak, 清章木内, R. A. Stall, A. Gurary, N. E. Schumaker	1993	2
19	Vapor transport epitaxy, a novel growth technique for compound semiconductors Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·A. Gurary, Gary S. Tompa, Μ. Χρυσομάλλης, R. A. Stall, Sheng‐Kai Liang, Yuangang Lu	1992	2
20	Elemental vapor transport epitaxy of GaAs, without oval defects Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Gary S. Tompa, A. Gurary, Μ. Χρυσομάλλης, R. A. Stall, S. Liang, Yicheng Lu	1992	2

About A. Gurary

A. Gurary is a scholar working on Condensed Matter Physics, Surfaces, Coatings and Films, Computational Mechanics, Electrical and Electronic Engineering and Mechanics of Materials, having authored 24 papers that have together received 363 indexed citations. Recurring topics across this work include Semiconductor materials and devices (9 papers), GaN-based semiconductor devices and materials (8 papers), Fluid Dynamics and Thin Films (7 papers), Semiconductor Quantum Structures and Devices (4 papers), Heat Transfer and Optimization (3 papers), Nanofluid Flow and Heat Transfer (3 papers), Solidification and crystal growth phenomena (3 papers) and Metal and Thin Film Mechanics (3 papers). The work is most often cited by research in Condensed Matter Physics (175 citations), Computational Mechanics (85 citations), Electrical and Electronic Engineering (190 citations), Electronic, Optical and Magnetic Materials (53 citations) and Materials Chemistry (129 citations). A. Gurary has collaborated with scholars based in United States. Frequent co-authors include L. Kadinski, W. E. Quinn, J. Ramer, E. Armour, V. Merai, P. Zawadzki, R. A. Stall, R. A. Stall, M. V. Belousov and Gary S. Tompa. Their work appears in journals such as Journal of Crystal Growth, Journal of Electronic Materials, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal of The Electrochemical Society and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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