C. Barratt

652 citations

19 papers · 514 indexed · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Plasma Diagnostics and Applications
- Advancements in Semiconductor Devices and Circuit Design

Papers in ⓘ

Electrical and Electronic Engineering 16
- Semiconductor materials and devices 14
- Plasma Diagnostics and Applications 8
- Electrostatic Discharge in Electronics 2
- Advancements in Semiconductor Devices and Circuit Design 2
Condensed Matter Physics 6
- GaN-based semiconductor devices and materials 6

Co-authors: C. Constantine (17 shared papers)S. J. Pearton (15 shared papers)R. J. Shul (13 shared papers)G McClellan (4 shared papers)C. R. Abernathy (9 shared papers)D. J. Rieger (4 shared papers)F. Ren (9 shared papers)J. W. Lee (6 shared papers)
Journals: Electronics Letters (4 papers)Applied Physics Letters (3 papers)Solid-State Electronics (2 papers)Journal of The Electrochemical Society (2 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (1 paper)
Partner nations: United States

In The Last Decade

C. Barratt

19 papers receiving 494 citations

Peers

Countries citing papers authored by C. Barratt

Since Specialization

Citations

This map shows the geographic impact of C. Barratt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Barratt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Barratt more than expected).

Fields of papers citing papers by C. Barratt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Barratt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Barratt. The network helps show where C. Barratt may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Barratt, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Barratt Line = papers co-authored together C. Barratt links everyone, so they are left out of the graph.

All Works

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19 of 19 papers shown

#	Work
1	Inductively coupled plasma etching of GaN Applied Physics Letters ·R. J. Shul, G McClellan, S.A. Casalnuovo, D. J. Rieger, S. J. Pearton, C. Constantine, C. Barratt, R. F. Karlicek, Cao Vinh Tran, M. Schurman	1996	178
2	High-density plasma etching of compound semiconductors Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·R. J. Shul, G McClellan, R. D. Briggs, D. J. Rieger, S. J. Pearton, C. R. Abernathy, J. W. Lee, C. Constantine, C. Barratt	1997	93
3	Comparison of dry etch techniques for GaN Electronics Letters ·R. J. Shul, G McClellan, S. J. Pearton, C. R. Abernathy, C. Constantine, C. Barratt	1996	45
4	Smooth, low-bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures Applied Physics Letters ·C. Constantine, C. Barratt, S. J. Pearton, F. Ren, J. R. Lothian	1992	37
5	Chlorine-Based Plasma Etching of GaN MRS Proceedings ·R. J. Shul, R. D. Briggs, S. J. Pearton, C. B. Vartuli, C. R. Abernathy, J. W. Lee, C. Constantine, C. Barratt	1996	28
6	Microwave CI ₂ /H ₂ discharges for high rate etching of InP Electronics Letters ·C. Constantine, C. Barratt, S. J. Pearton, F. Ren, J. R. Lothian	1992	24
7	Inductively Coupled Plasma Etching of III‐V Nitrides in CH 4 / H 2 / Ar and CH 4 / H 2 / N 2 Chemistries Journal of The Electrochemical Society ·C. B. Vartuli, S. J. Pearton, J. W. Lee, J. D. MacKenzie, C. R. Abernathy, R. J. Shul, C. Constantine, C. Barratt	1997	18
8	Dry etching of via connections for InP power devices Electronics Letters ·C. Constantine, C. Barratt, S. J. Pearton, F. Ren, J. R. Lothian, W. S. Hobson, A. Katz, Ling Yang, P.C. Chao	1993	17
9	Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors Applied Physics Letters ·F. Ren, J. W. Lee, C. R. Abernathy, S. J. Pearton, C. Constantine, C. Barratt, R. J. Shul	1997	17
10	Hydrogenation effects during high-density plasma processing of GaAs MESFETS Semiconductor Science and Technology ·F. Ren, Jun‐Hyeop Lee, C. R. Abernathy, S. J. Pearton, R. J. Shul, C. Constantine, C. Barratt	1997	13
11	Effects of H2 plasma exposure on GaAsAlGaAs heterojunction bipolar transistors Solid-State Electronics ·J.W Lee, C. R. Abernathy, S. J. Pearton, F. Ren, R. J. Shul, C. Constantine, C. Barratt	1997	12
12	Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·F. Ren, J. W. Lee, C. R. Abernathy, S. J. Pearton, C. Constantine, C. Barratt, R. J. Shul	1997	8
13	Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes Journal of The Electrochemical Society ·J. W. Lee, C. R. Abernathy, S. J. Pearton, F. Ren, W. S. Hobson, R. J. Shul, C. Constantine, C. Barratt	1997	6
14	Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas Solid-State Electronics ·J.W Lee, C. R. Abernathy, S. J. Pearton, F. Ren, C. Constantine, C. Barratt, R. J. Shul	1998	5
15	Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source MRS Proceedings ·C. Constantine, D. Johnson, C. Barratt, R. J. Shul, G McClellan, R. D. Briggs, D. J. Rieger, R. F. Karlicek, J. W. Lee, S. J. Pearton	1996	5
16	Anisotropic electron cyclotron resonance etchingof tungsten films on GaAs Electronics Letters ·R. J. Shul, D. J. Rieger, Albert G. Baca, C. Constantine, C. Barratt	1994	4
17	The Stark effect on an excited hydrogen atom American Journal of Physics ·C. Barratt	1983	2
18	Development and Ramping of pHEMT in an "HBT Fab" Mike Fresina, C. Barratt, Chuck Duncan, Serena Greene, Lewis Waswa, L. Li, T. J. Rogers, C. Santana, W. Wohlmuth, R. W. Yanka	2007	1
19	<title>Dry etching for the fabrication of flat panel displays</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·C. Barratt, D. J. Johnson, C. Constantine	1995	1

About C. Barratt

C. Barratt is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 19 papers that have together received 514 indexed citations. Recurring topics across this work include Semiconductor materials and devices (14 papers), Plasma Diagnostics and Applications (8 papers), GaN-based semiconductor devices and materials (6 papers), ZnO doping and properties (3 papers), Semiconductor Quantum Structures and Devices (2 papers), Metal and Thin Film Mechanics (2 papers), Electrostatic Discharge in Electronics (2 papers) and Advancements in Semiconductor Devices and Circuit Design (2 papers). The work is most often cited by research in Condensed Matter Physics (279 citations), Electrical and Electronic Engineering (434 citations), Mechanics of Materials (111 citations), Electronic, Optical and Magnetic Materials (71 citations) and Surfaces, Coatings and Films (25 citations). C. Barratt has collaborated with scholars based in United States. Frequent co-authors include C. Constantine, S. J. Pearton, R. J. Shul, G McClellan, C. R. Abernathy, D. J. Rieger, F. Ren, J. W. Lee, Cao Vinh Tran and R. F. Karlicek. Their work appears in journals such as Electronics Letters, Applied Physics Letters, Solid-State Electronics, Journal of The Electrochemical Society and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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