C. Barratt

652 total citations
19 papers, 514 citations indexed

About

C. Barratt is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, C. Barratt has authored 19 papers receiving a total of 514 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 6 papers in Condensed Matter Physics and 5 papers in Materials Chemistry. Recurrent topics in C. Barratt's work include Semiconductor materials and devices (14 papers), Plasma Diagnostics and Applications (8 papers) and GaN-based semiconductor devices and materials (6 papers). C. Barratt is often cited by papers focused on Semiconductor materials and devices (14 papers), Plasma Diagnostics and Applications (8 papers) and GaN-based semiconductor devices and materials (6 papers). C. Barratt collaborates with scholars based in United States. C. Barratt's co-authors include C. Constantine, S. J. Pearton, R. J. Shul, G McClellan, C. R. Abernathy, D. J. Rieger, F. Ren, J. W. Lee, R. F. Karlicek and S.A. Casalnuovo and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and American Journal of Physics.

In The Last Decade

C. Barratt

19 papers receiving 494 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Barratt United States	11	434	279	138	111	100	19	514
G. F. McLane United States	11	287 0.7×	91 0.3×	152 1.1×	69 0.6×	143 1.4×	43	409
Z. Liliental-Weber United States	10	403 0.9×	351 1.3×	129 0.9×	168 1.5×	292 2.9×	15	589
D. A. Vanderwater United States	13	383 0.9×	253 0.9×	93 0.7×	77 0.7×	278 2.8×	19	533
A. P. Zhang United States	11	484 1.1×	620 2.2×	155 1.1×	88 0.8×	182 1.8×	12	674
V. Bousquet United Kingdom	12	267 0.6×	359 1.3×	226 1.6×	99 0.9×	269 2.7×	35	533
J. Sewell United States	11	503 1.2×	401 1.4×	127 0.9×	58 0.5×	134 1.3×	45	601
A. Weimar Germany	14	262 0.6×	316 1.1×	120 0.9×	43 0.4×	218 2.2×	34	409
Yoshiharu Yamauchi Japan	14	392 0.9×	170 0.6×	150 1.1×	73 0.7×	356 3.6×	39	534
Toshiyuki Tanahashi Japan	15	391 0.9×	343 1.2×	174 1.3×	65 0.6×	471 4.7×	38	672
C.J. Deatcher United Kingdom	10	125 0.3×	335 1.2×	162 1.2×	121 1.1×	152 1.5×	12	407

Countries citing papers authored by C. Barratt

Since Specialization

Citations

This map shows the geographic impact of C. Barratt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Barratt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Barratt more than expected).

Fields of papers citing papers by C. Barratt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Barratt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Barratt. The network helps show where C. Barratt may publish in the future.

Co-authorship network of co-authors of C. Barratt

This figure shows the co-authorship network connecting the top 25 collaborators of C. Barratt. A scholar is included among the top collaborators of C. Barratt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Barratt. C. Barratt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Barratt, C., et al.. (2007). Development and Ramping of pHEMT in an "HBT Fab". 1 indexed citations

Abernathy, C. R., S. J. Pearton, F. Ren, et al.. (1998). Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas. Solid-State Electronics. 42(5). 733–742. 5 indexed citations

Ren, F., C. R. Abernathy, S. J. Pearton, et al.. (1997). Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(4). 983–989. 8 indexed citations

Ren, F., J. W. Lee, C. R. Abernathy, et al.. (1997). Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors. Applied Physics Letters. 70(18). 2410–2412. 17 indexed citations

Abernathy, C. R., S. J. Pearton, F. Ren, et al.. (1997). Effects of H2 plasma exposure on GaAsAlGaAs heterojunction bipolar transistors. Solid-State Electronics. 41(6). 829–833. 12 indexed citations

Vartuli, C. B., S. J. Pearton, J. W. Lee, et al.. (1997). Inductively Coupled Plasma Etching of III‐V Nitrides in CH 4 / H 2 / Ar and CH 4 / H 2 / N 2 Chemistries. Journal of The Electrochemical Society. 144(8). 2844–2847. 18 indexed citations

Shul, R. J., G McClellan, R. D. Briggs, et al.. (1997). High-density plasma etching of compound semiconductors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(3). 633–637. 93 indexed citations

Ren, F., C. R. Abernathy, S. J. Pearton, et al.. (1997). Hydrogenation effects during high-density plasma processing of GaAs MESFETS. Semiconductor Science and Technology. 12(9). 1154–1160. 13 indexed citations

Lee, J. W., C. R. Abernathy, S. J. Pearton, et al.. (1997). Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes. Journal of The Electrochemical Society. 144(4). 1417–1422. 6 indexed citations

10.

Shul, R. J., G McClellan, S.A. Casalnuovo, et al.. (1996). Inductively coupled plasma etching of GaN. Applied Physics Letters. 69(8). 1119–1121. 178 indexed citations

11.

Shul, R. J., R. D. Briggs, S. J. Pearton, et al.. (1996). Chlorine-Based Plasma Etching of GaN. MRS Proceedings. 449. 28 indexed citations

12.

Shul, R. J., G McClellan, S. J. Pearton, et al.. (1996). Comparison of dry etch techniques for GaN. Electronics Letters. 32(15). 1408–1409. 45 indexed citations

13.

Constantine, C., D. Johnson, C. Barratt, et al.. (1996). Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source. MRS Proceedings. 421. 5 indexed citations

14.

Barratt, C., D. J. Johnson, & C. Constantine. (1995). <title>Dry etching for the fabrication of flat panel displays</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2408. 215–219. 1 indexed citations

15.

Shul, R. J., D. J. Rieger, Albert G. Baca, C. Constantine, & C. Barratt. (1994). Anisotropic electron cyclotron resonance etchingof tungsten films on GaAs. Electronics Letters. 30(1). 84–85. 4 indexed citations

16.

Constantine, C., C. Barratt, S. J. Pearton, et al.. (1993). Dry etching of via connections for InP power devices. Electronics Letters. 29(11). 984–986. 17 indexed citations

17.

Constantine, C., C. Barratt, S. J. Pearton, F. Ren, & J. R. Lothian. (1992). Microwave CI ₂ /H ₂ discharges for high rate etching of InP. Electronics Letters. 28(18). 1749–1750. 24 indexed citations

18.

Constantine, C., C. Barratt, S. J. Pearton, F. Ren, & J. R. Lothian. (1992). Smooth, low-bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures. Applied Physics Letters. 61(24). 2899–2901. 37 indexed citations

19.

Barratt, C.. (1983). The Stark effect on an excited hydrogen atom. American Journal of Physics. 51(7). 610–612. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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