J. Ramer

1.3k citations

38 papers · 1.1k indexed · h-index 17

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 34
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 12
Materials Chemistry top 10%
- ZnO doping and properties 8
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 11
Mechanics of Materials top 5%
- Metal and Thin Film Mechanics 11
Electrical and Electronic Engineering
- Semiconductor materials and devices 15
- Plasma Diagnostics and Applications 3
- Silicon Carbide Semiconductor Technologies 2

Co-authors: S. D. Hersee E. Armour D. I. Florescu V. Merai M. Schurman L. F. Lester Ian T. Ferguson J.C. Zolper
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Applied Physics Letters (11 papers)Journal of Crystal Growth (5 papers)Journal of Electronic Materials (3 papers)
Partner nations: United States Israel

In The Last Decade

J. Ramer

36 papers receiving 1.1k citations

Peers

Countries citing papers authored by J. Ramer

Since Specialization

Citations

This map shows the geographic impact of J. Ramer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Ramer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Ramer more than expected).

Fields of papers citing papers by J. Ramer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Ramer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Ramer. The network helps show where J. Ramer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Ramer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Ramer Line = papers co-authored together J. Ramer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors Journal of Crystal Growth ·E Daniels,Joseph Mah,J. Ramer,V. Merai,E. Armour,L. Kadinski,A. Gurary	2006	44
2	Observation of In concentration variations in InGaN∕GaN quantum-well heterostructures by scanning capacitance microscopy Applied Physics Letters ·Leslie Peppers,Edward T. Yu,D. I. Florescu,J. Ramer,Dong‐Seon Lee,Santanu Roy,E. Armour	2005	5
3	Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study MRS Internet Journal of Nitride Semiconductor Research ·F. Shahedipour‐Sandvik,Muhammad Jamil,Lehan Syah,James Grandusky,Kathleen Dunn,J. Ramer,V. Merai	2005	3
4	Sapphire substrate misorientation effects on GaN nucleation layer properties Journal of Crystal Growth ·Dongzhu Lu,D. I. Florescu,武书连,V. Merai,J. Ramer,Joseph Mah,E. Armour	2004	31
5	AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire Journal of Crystal Growth ·D. I. Florescu,J. Ramer,V. Merai,Joseph Mah,Dongzhu Lu,武书连,E. Armour	2004	8
6	In Ga N ∕ Ga N single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions Applied Physics Letters ·D. I. Florescu,J. Ramer,Kate Cerino Britton,E. Armour	2004	16
7	Edge-emitting electroluminescence polarization investigation of InGaN/GaN light-emitting diodes grown by metal-organic chemical vapor deposition on sapphire (0001) Journal of Electronic Materials ·D. I. Florescu,R.G. Kapooria,Santanu Roy,J. Ramer,E. Armour	2003	11
8	Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition Journal of Applied Physics ·Santanu Roy,J. Ramer,D. I. Florescu,V. Merai,Ogunwale A.B,Joseph Mah,Öznur Hızarcı,Dongzhu Lu,J Chotkowski,Hector Pino,E. Armour	2003	91
9	Influence of oxygen on the activation of p-type GaN Applied Physics Letters ·Hadi Ghodrat,Suzanne E. Mohney,Hari Venugopalan,J. Ramer	2000	78
10	Cathodoluminescence of Lateral Epitaxial Overgrowth GaN: Dependencies on Excitation Conditions MRS Proceedings ·G. S. Cargill,Eva M. Campo,Lanping Yue,J. Ramer,M. Schurman,Ian T. Ferguson	2000	2
11	Degradation of Luminescence from GaN During Electron Bombardment: Effects of Beam Voltage, Current and Scanned Area MRS Proceedings ·Eva M. Campo,G. S. Cargill,J. Ramer,M. Schurman,Ian T. Ferguson	2000	0
12	Raman Microscopy of Lateral Epitaxial Overgrowth of GaN on Sapphire physica status solidi (b) ·M. Pophristić,Frederick H. Long,M. Schurman,J. Ramer,Ian T. Ferguson	1999	3
13	Emissivity Compensated Pyrometry of the Substrate Surface During Movpe Growth of In_xGa_1−xAs_1−yP_y/InP Materials in Rotating Disc Reactors MRS Proceedings ·J. Ramer,かの子山本,A. Patel,Michel Troche,A. Gurary	1999	2
14	Stability and interface abruptness of InxGa1−xN/InyGa1−yN multiple quantum well structures grown by OMVPE Journal of Electronic Materials ·J. Ramer,David Zubía,P. Nagel,S. D. Hersee	1997	4
15	The Microstructure of Metalorganic-Chemical-Vapor-Deposition GaN on Sapphire MRS Bulletin ·S. D. Hersee,J. Ramer,Kevin J. Malloy	1997	34
16	Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN Applied Physics Letters ·J.C. Zolper,Mary H. Crawford,A. J. Howard,J. Ramer,S. D. Hersee	1996	81
17	Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal Applied Physics Letters ·L. F. Lester,Judith M. Brown,J. Ramer,Hau-Ling Chan,S. D. Hersee,J.C. Zolper	1996	94
18	Ion Implantation Doping and High Temperature Annealing of GaN MRS Proceedings ·J.C. Zolper,Mary H. Crawford,A. J. Howard,S. J. Pearton,C. R. Abernathy,C. B. Vartuli,C. YUAN,Mathias Lundström,J. Ramer,S. D. Hersee,R. G. Wilson	1995	2
19	A Study of the Effect of Growth Rate and Annealing on GaN Buffer Layers on Sapphire MRS Proceedings ·J. Ramer,Elisângela Martins de Carvalho,C. Kranenberg,Michael A. Banas,S. D. Hersee	1995	10
20	Electron cyclotron resonance etching characteristics of GaN in plasmas with and without hydrogen MRS Proceedings ·J. Quelch,J. Ramer,Jeff L. Brown,Kang Zheng,L. F. Lester,S. D. Hersee	1995	5

About J. Ramer

J. Ramer is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 38 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (15 papers), Ga2O3 and related materials (12 papers), Semiconductor Quantum Structures and Devices (11 papers), Metal and Thin Film Mechanics (11 papers), ZnO doping and properties (8 papers), Plasma Diagnostics and Applications (3 papers) and Silicon Carbide Semiconductor Technologies (2 papers). The work is most often cited by research in Condensed Matter Physics (933 citations), Electronic, Optical and Magnetic Materials (358 citations) and Materials Chemistry (525 citations). J. Ramer has collaborated with scholars based in United States and Israel. Frequent co-authors include S. D. Hersee, E. Armour, D. I. Florescu, V. Merai, M. Schurman, L. F. Lester, Ian T. Ferguson, J.C. Zolper, V. M. Asnin and Fred H. Pollak. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Electronic Materials, Journal of Applied Physics and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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