J. Ramer

1.3k total citations
38 papers, 1.1k citations indexed

About

J. Ramer is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Ramer has authored 38 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Condensed Matter Physics, 18 papers in Electrical and Electronic Engineering and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Ramer's work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (15 papers) and Ga2O3 and related materials (12 papers). J. Ramer is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (15 papers) and Ga2O3 and related materials (12 papers). J. Ramer collaborates with scholars based in United States and Israel. J. Ramer's co-authors include S. D. Hersee, E. Armour, D. I. Florescu, V. Merai, M. Schurman, Ian T. Ferguson, L. F. Lester, J.C. Zolper, V. M. Asnin and Fred H. Pollak and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

J. Ramer

36 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Ramer United States 17 933 525 500 358 308 38 1.1k
M. Kuball United Kingdom 19 695 0.7× 496 0.9× 430 0.9× 244 0.7× 179 0.6× 45 922
H. P. Strunk Germany 15 738 0.8× 483 0.9× 456 0.9× 380 1.1× 302 1.0× 44 1.1k
Tomasz Sochacki Poland 20 1.0k 1.1× 551 1.0× 512 1.0× 613 1.7× 229 0.7× 76 1.2k
R. Lossy Germany 17 540 0.6× 407 0.8× 593 1.2× 246 0.7× 172 0.6× 50 968
C. K. Inoki United States 17 345 0.4× 321 0.6× 510 1.0× 328 0.9× 150 0.5× 34 817
Drew Hanser United States 20 977 1.0× 512 1.0× 423 0.8× 445 1.2× 285 0.9× 33 1.1k
Takehiro Yoshida Japan 22 1.0k 1.1× 469 0.9× 789 1.6× 605 1.7× 250 0.8× 56 1.3k
Urban Forsberg Sweden 23 862 0.9× 564 1.1× 852 1.7× 517 1.4× 285 0.9× 79 1.5k
Stephan Schwaiger Germany 18 397 0.4× 292 0.6× 271 0.5× 370 1.0× 311 1.0× 41 803
K. Hazu Japan 15 550 0.6× 318 0.6× 258 0.5× 376 1.1× 167 0.5× 48 724

Countries citing papers authored by J. Ramer

Since Specialization
Citations

This map shows the geographic impact of J. Ramer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Ramer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Ramer more than expected).

Fields of papers citing papers by J. Ramer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Ramer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Ramer. The network helps show where J. Ramer may publish in the future.

Co-authorship network of co-authors of J. Ramer

This figure shows the co-authorship network connecting the top 25 collaborators of J. Ramer. A scholar is included among the top collaborators of J. Ramer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Ramer. J. Ramer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ramer, J., et al.. (2006). Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors. Journal of Crystal Growth. 289(2). 708–714. 44 indexed citations
2.
Yu, Edward T., et al.. (2005). Observation of In concentration variations in InGaN∕GaN quantum-well heterostructures by scanning capacitance microscopy. Applied Physics Letters. 86(20). 5 indexed citations
3.
Shahedipour‐Sandvik, F., Muhammad Jamil, James Grandusky, et al.. (2005). Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study. MRS Internet Journal of Nitride Semiconductor Research. 10. 3 indexed citations
4.
Lu, Dongzhu, et al.. (2004). Sapphire substrate misorientation effects on GaN nucleation layer properties. Journal of Crystal Growth. 272(1-4). 353–359. 31 indexed citations
5.
6.
Belousov, M. V., et al.. (2004). In situ metrology advances in MOCVD growth of GaN-based materials. Journal of Crystal Growth. 272(1-4). 94–99. 28 indexed citations
7.
8.
Florescu, D. I., et al.. (2003). Edge-emitting electroluminescence polarization investigation of InGaN/GaN light-emitting diodes grown by metal-organic chemical vapor deposition on sapphire (0001). Journal of Electronic Materials. 32(11). 1330–1334. 11 indexed citations
9.
Florescu, D. I., J. Ramer, V. Merai, et al.. (2003). Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire. Applied Physics Letters. 83(1). 33–35. 81 indexed citations
10.
Kadinski, L., V. Merai, J. Ramer, et al.. (2003). Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors. Journal of Crystal Growth. 261(2-3). 175–181. 42 indexed citations
11.
Cargill, G. S., Eva M. Campo, Lanping Yue, et al.. (2000). Cathodoluminescence of Lateral Epitaxial Overgrowth GaN: Dependencies on Excitation Conditions. MRS Proceedings. 622. 2 indexed citations
12.
Mohney, Suzanne E., et al.. (2000). Influence of oxygen on the activation of p-type GaN. Applied Physics Letters. 76(16). 2271–2273. 78 indexed citations
13.
Campo, Eva M., G. S. Cargill, J. Ramer, M. Schurman, & Ian T. Ferguson. (2000). Degradation of Luminescence from GaN During Electron Bombardment: Effects of Beam Voltage, Current and Scanned Area. MRS Proceedings. 639.
14.
15.
Ramer, J., et al.. (1997). Stability and interface abruptness of InxGa1−xN/InyGa1−yN multiple quantum well structures grown by OMVPE. Journal of Electronic Materials. 26(10). 1109–1113. 4 indexed citations
16.
Hersee, S. D., J. Ramer, & Kevin J. Malloy. (1997). The Microstructure of Metalorganic-Chemical-Vapor-Deposition GaN on Sapphire. MRS Bulletin. 22(7). 45–51. 34 indexed citations
17.
Zolper, J.C., Mary H. Crawford, A. J. Howard, J. Ramer, & S. D. Hersee. (1996). Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN. Applied Physics Letters. 68(2). 200–202. 81 indexed citations
18.
Lester, L. F., et al.. (1996). Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal. Applied Physics Letters. 69(18). 2737–2739. 94 indexed citations
19.
Zolper, J.C., Mary H. Crawford, A. J. Howard, et al.. (1995). Ion Implantation Doping and High Temperature Annealing of GaN. MRS Proceedings. 395. 2 indexed citations
20.
Ramer, J., et al.. (1995). Electron cyclotron resonance etching characteristics of GaN in plasmas with and without hydrogen. MRS Proceedings. 395. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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