B. D. Little

729 total citations
27 papers, 595 citations indexed

About

B. D. Little is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, B. D. Little has authored 27 papers receiving a total of 595 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Condensed Matter Physics, 16 papers in Atomic and Molecular Physics, and Optics and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in B. D. Little's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor Quantum Structures and Devices (16 papers) and Ga2O3 and related materials (12 papers). B. D. Little is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor Quantum Structures and Devices (16 papers) and Ga2O3 and related materials (12 papers). B. D. Little collaborates with scholars based in United States and South Korea. B. D. Little's co-authors include J. J. Song, S. Bidnyk, R. A. Stall, M. Schurman, W. Shan, J. J. Song, T. J. Schmidt, B. Goldenberg, W. G. Perry and Zhe Chuan Feng and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. D. Little

24 papers receiving 583 citations

Peers

B. D. Little

CMP

AMPO

EOMM

EEE

Kazuhiko Horino Japan

Munehiro Kato Japan

A. S. Zubrilov Russia

I. D. Goepfert United States

Ho Ki Kwon South Korea

Yohei Enya Japan

Takamichi Sumitomo Japan

C. Roder Germany

Daniel A. Haeger United States

B. Monemar Sweden

Kazuhiko Horino Japan

B. D. Little

465 ×0.9

CMP

286 ×1.0

AMPO

193 ×0.7

191 ×0.8

EOMM

143 ×1.0

EEE

Citations per year, relative to B. D. Little B. D. Little (= 1×) peers Kazuhiko Horino

Countries citing papers authored by B. D. Little

Since Specialization

Citations

This map shows the geographic impact of B. D. Little's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. D. Little with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. D. Little more than expected).

Fields of papers citing papers by B. D. Little

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. D. Little. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. D. Little. The network helps show where B. D. Little may publish in the future.

Co-authorship network of co-authors of B. D. Little

This figure shows the co-authorship network connecting the top 25 collaborators of B. D. Little. A scholar is included among the top collaborators of B. D. Little based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. D. Little. B. D. Little is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Little, B. D., et al.. (2024). Growth and characterization of AlInN/GaN superlattices. Journal of Crystal Growth. 630. 127567–127567. 2 indexed citations

Little, B. D., Seiji Mita, J. Houston Dycus, et al.. (2024). Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor. Applied Physics Letters. 125(6). 2 indexed citations

Little, B. D., Yong‐Hoon Cho, T. J. Schmidt, et al.. (2003). Comparison of spontaneous and stimulated emission from UV-blue photonic materials. 2. 290–291.

Kwon, Young-Kil, B. D. Little, G. H. Gainer, et al.. (2001). Time-resolved photoluminescence ofInxGa1−xN/GaNmultiple quantum well structures: Effect of Si doping in the barriers. Physical review. B, Condensed matter. 64(24). 59 indexed citations

Bidnyk, S., G. H. Gainer, S. K. Shee, et al.. (2001). Optical Properties and Lasing in (In, Al)GaN Structures. physica status solidi (a). 183(1). 105–109. 3 indexed citations

Bidnyk, S., et al.. (2000). Study of gain mechanisms in AlGaN in the temperature range of 30–300 K. Applied Physics Letters. 77(25). 4101–4103. 1 indexed citations

Bidnyk, S., et al.. (2000). A comparative study of AlGaN- and GaN-based lasing structures for near- and deep-UV applications. MRS Proceedings. 622. 1 indexed citations

Bidnyk, S., B. D. Little, Young-Kil Kwon, et al.. (1999). Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures. Applied Physics Letters. 75(25). 3905–3907. 18 indexed citations

Bidnyk, S., et al.. (1999). A technique for evaluating optical confinement in GaN-based lasing structures. Applied Physics Letters. 75(15). 2163–2165. 4 indexed citations

10.

Bidnyk, S., B. D. Little, T. J. Schmidt, et al.. (1999). Stimulated emission in GaN thin films in the temperature range of 300–700 K. Journal of Applied Physics. 85(3). 1792–1795. 6 indexed citations

11.

Bidnyk, S., et al.. (1998). Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth. Applied Physics Letters. 73(16). 2242–2244. 58 indexed citations

12.

Shan, W., W. Walukiewicz, E. E. Häller, et al.. (1998). Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition. Journal of Applied Physics. 84(8). 4452–4458. 121 indexed citations

13.

Shan, W., A. J. Fischer, Sung‐Ho Hwang, et al.. (1998). Intrinsic exciton transitions in GaN. Journal of Applied Physics. 83(1). 455–461. 35 indexed citations

14.

Cho, Yong‐Hoon, B. D. Little, G. H. Gainer, et al.. (1998). Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in Mocvd-Grown InGaN Epilayers and InGaN/GaN Quantum Wells. MRS Proceedings. 537. 8 indexed citations

15.

Bidnyk, S., et al.. (1998). High-temperature stimulated emission studies of MOCVD-grown GaN films. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3419. 341906–341906.

16.

Shan, W., Joel W. Ager, W. Walukiewicz, et al.. (1998). Near-band-edge photoluminescence emission in AlxGa1−xN under high pressure. Applied Physics Letters. 72(18). 2274–2276. 12 indexed citations

17.

Shan, W., Joel W. Ager, W. Walukiewicz, et al.. (1997). High Pressure Study of III-Nitrides and Related Heterostructures. MRS Proceedings. 499.

18.

Shan, W., Shijie Xu, B. D. Little, et al.. (1997). Dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures. Journal of Applied Physics. 82(6). 3158–3160. 7 indexed citations

19.

Shan, W., B. D. Little, J. J. Song, et al.. (1996). Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition. Applied Physics Letters. 69(22). 3315–3317. 76 indexed citations

20.

Shan, W., B. D. Little, A. J. Fischer, et al.. (1996). Binding energy for the intrinsic excitons in wurtzite GaN. Physical review. B, Condensed matter. 54(23). 16369–16372. 76 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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